CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSSH-3E Series types are Enhanced Versions of the CMSSH-3 Series of Silicon Schottky Diodes in an SOT-323 Surface Mount Package. FEATURED ENHANCED SPECIFICATIONS: ♦ IF from 100mA max to 200mA MAX SOT-323 CASE CMSSH-3E: CMSSH-3AE: CMSSH-3CE: CMSSH-3SE: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25°C) ♦Peak Repetitive Reverse Voltage ♦Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ♦ ♦ BVR from 30V min to 40V MIN VF from 1.0V max to 0.8V MAX MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: 31E 3AE 3CE 3SE SYMBOL UNITS VRRM IF 40 V 200 mA IFRM IFSM 350 mA 750 mA PD TJ, Tstg 250 mW -65 to +150 °C ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=25V 90 500 nA IR VR=25V, TA=100°C IR=100µA 25 100 μA ♦BVR VF 40 50 V IF=2.0mA 0.29 0.33 V IF=15mA 0.37 0.42 V IF=100mA 0.61 0.80 V IF=200mA 0.65 1.0 V CT VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω ♦VF ♦VF ♦♦VF pF 5.0 ns ♦ Enhanced specification ♦♦ Additional Enhanced specification R2 (9-February 2010) CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMSSH-3E CMSSH-3AE CMSSH-3CE CMSSH-3SE LEAD CODE: 1) Anode 2) NC 3) Cathode LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: 31E MARKING CODE: 3AE MARKING CODE: 3CE MARKING CODE: 3SE R2 (9-February 2010) w w w. c e n t r a l s e m i . c o m