ACE4908A Dual P-Channel Enhancement Mode MOSFET Description The ACE4908A is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features • • • P-Channel -20V/1.0A,RDS (ON)= 520mΩ@VGS=-4.5V -20V/0.8A,RDS (ON)= 700mΩ@VGS=-2.5V -20V/0.7A,RDS (ON)= 950mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability APPLICATIONS • • • • • • • Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter VER 1.1 1 ACE4908A Dual P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V VGSS ±12 V Gate-Source Voltage O Continuous Drain Current(TJ=150℃) TA=25 C ID O TA=70 C Pulse Drain Current -3 IS -0.6 O TA=25 C O TA=70 C Operating and Storage Temperature Range Thermal Resistance-Junction to Ambient T ≤ 10sec Steady State PD A -0.7 IDM Continuous Source Current(Diode Conduction) Power Dissipation -1.0 A 0.35 W 0.19 O TJ,TSTG -55 to 150 RθJA 360 O 400 C C/W Packaging Type SOT-363(SC-70-6) P- channel P- channel Pin 1 2 3 4 5 6 Symbol S1 G1 D2 S2 G2 D1 Description Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain1 Ordering information ACE4908A EM + H Halogen - free Pb - free EM : SOT363 VER 1.1 2 ACE4908A Dual P-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -20 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.35 Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance RDS(ON) V -0.8 V VDS=0V ,VGS=±12V ±100 nA VDS=-20V, VGS=0V -1 VDS=-20V,VGS=0V,TJ=55℃ -5 VDS≤ -4.5V,VGS =-5V -2 uA A VGS=-4.5V, ID=-1.0A 0.42 0.52 VGS=-2.5V, ID=-0.8A 0.58 0.70 VGS=-1.8V, ID=-0.5A 0.75 0.95 Forward Transconductance gFS VDS=-10V, ID=-1.0A 1.5 Diode Forward Voltage VSD IS=-0.5A ,VGS=0V -0.8 -1.2 1.5 2.0 Ω S V Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VDS=-10V, VGS=-4.5V, ID=-0.88A VGNE=-4.5V, VDD=-10V, RL=20Ω, RG=6Ω, ID=-0.5A 0.3 nC 0.2 18 30 25 40 15 45 12 20 ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 145 VDS=-10V, VGS=0V,f=1MHz 25 pF 10 Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 3 ACE4908A Dual P-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 4 ACE4908A Dual P-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.1 5 ACE4908A Dual P-Channel Enhancement Mode MOSFET Packing Information SOT363(SC-70-6) VER 1.1 6 ACE4908A Dual P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7