Jinan Jingheng BZX55/C4V7 Silicon planar zener diode Datasheet

R
0.5W SILIC O N PLA N A R ZEN ER D IO D ES
S E M I C O N D U C T O R
D O -35
FEA TU RES
The zener voltage are graded according to the internationalE24
standard.O ther voltage tolerance and higher zenervoltage
1.083(27.5)
MIN
on request
0.079(2.0)
MAX
DIA
0.150(3.8)
MAX
M EC H A N IC A L D A TA
Case: D O -35 glass case
1.083(27.5)
MIN
Polarity:C olor band denotes cathode end
0.020(0.52)
MAX
DIA
W eight:Approx. 0.13 gram
D im ensions in inches and (m illim eters)
A BSO LU TE M A XIM U M RA TIN G S(LIM ITIN G V A LU ES) (TA = 25 C )
Zener current see table "C haracteristics"
P tot
TJ
T S TG
P ow er dissipation atT A =50 C
Junction tem perature
S torage tem perature range
500 1)
mW
175
C
-65 to+175
C
1) Valid provided thata distance of 8m m from case are kept at am bient tem perature
ELEC TRIC A L C H A RA C TERISTIC S (TA= 25 C )
Therm alresistance junction to am bientair
Forw ard voltage at IF =100m A
R
JA
VF
1) Valid provided thata distance of 8m m from case are kept at am bient tem perature
300 1)
1.0
K /W
V
Zener Voltage range 1)
VZ NOM
V
BZX 55/C 0 V 8
3)
IZT for VZT
mA
0.8
2)
IR and IR 2) at VR
mA
V
0.73...0.83
<8
A
--
<50
A
--
TK VZ
V
%/K
--
-0.26...-0.23
BZX 55/C 2 V 0
2.0
1.9...2.1
<100
<200
BZX 55/C 2 V 4
2.4
2.28...2.56
<50
<100
BZX 55/C 2 V 7
2.7
2.5...2.9
<10
<50
BZX 55/C 3 V 0
3.0
2.8...3.2
BZX 55/C 3 V 3
3.3
3.1...3.5
BZX 55/C 3 V 6
3.6
3.4...3.8
BZX 55/C 3 V 9
3.9
3.7...4.1
BZX 55/C 4 V 3
4.3
4.0...4.6
<75
<1
<20
-0.06...-0.03
BZX 55/C 4 V 7
4.7
4.4...5.0
<60
<0.5
<10
-0.05...+0.02
BZX 55/C 5 V 1
5.1
4.8...5.4
<35
<550
BZX 55/C 5 V 6
5.6
5.2...6.0
<25
<450
BZX 55/C 6 V 2
6.2
5.8...6.6
<10
<200
BZX 55/C 6 V 8
6.8
6.4...7.2
<8
<150
BZX 55/C 7 V 5
7.5
7.0...7.9
<7
BZX 55/C 8 V 2
8.2
7.7...8.7
<7
BZX 55/C 9 V 1
9.1
8.5...9.6
<10
BZX 55/C 10
10
9.4...10.6
<15
<70
BZX 55/C 11
11
10.4...11.6
<20
<70
BZX 55/C 12
12
11.4...12.7
<20
<90
9.1
BZX 55/C 13
13
12.4...14.1
<26
<110
10
BZX 55/C 15
15
13.8...15.6
<30
<110
11
BZX 55/C 16
16
15.3...17.1
<40
<170
12
BZX 55/C 18
18
16.8...19.1
<50
<170
BZX 55/C 20
20
18.8...21.2
<55
BZX 55/C 22
22
20.8...23.3
<55
BZX 55/C 24
24
22.8...25.6
<80
BZX 55/C 27
27
25.1...28.9
<80
5
-0.09...-0.06
<4
<85
<600
<2
<40
1
-0.08...-0.05
-0.02...+0.02
-0.05...+0.05
1
<50
<0.1
<2
2
0.03...0.06
3
0.03...0.07
5
0.03...0.07
6.2
0.03...0.08
6.8
0.03...0.09
7.5
0.03...0.1
8.2
0.03...0.11
13
15
<220
16
18
20
0.04...0.12
Zener Voltage range 1)
VZ NOM
V
IZT for VZT
mA
2)
IR and IR 2) at VR
mA
V
BZX 55/C 30
30
BZX 55/C 33
33
BZX 55/C 36
36
34...38
BZX 55/C 39
39
BZX 55/C 43
A
A
28...32
TK V2
V
<2
<80
<220
37...41
<90
<500
43
40...46
<90
<500
BZX 55/C 47
47
44...50
<110
<600
36
BZX 55/C 51
51
48...54
<125
<700
39
<700
5
31...35
1
24
27
30
<5
33
BZX 55/C 56
56
52...60
<135
BZX 55/C 62
62
58...66
<150
BZX 55/C 68
68
64...72
<200
BZX 55/C 75
75
70...79
<250
BZX 55/C 82
82
77...87
<300
<1500
BZX 55/C 91
91
85...96
<450
<2000
BZX 55/C 100
100
94...106
<450
<5000
BZX 55/C 110
110
104...116
<600
<5000
BZX 55/C 120
120
114...127
<800
<5500
BZX 55/C 130
130
124...141
<950
<6000
BZX 55/C 150
150
138...156
<1250
<6500
110
BZX 55/C 160
160
153...171
<1400
<7000
120
BZX 55/C 180
180
168...191
<1700
<8500
130
BZX 55/C 200
200
188...212
<2000
<10000
150
2.5
1
%/K
22
0.5
0.04...0.12
43
47
<1000
51
<0.1
56
0.25
62
<10
68
75
82
91
0.1
0.05...0.12
100
1) Teated with pulses tp=20ms
2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
3) The BZX55-C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to
the negative pole.
BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED)
BZX55...
mA
50
C2V7
C0V8
40
C3V9
C3V3
C5V6
C4V7
C8V2
C6V8
IZ
30
TJ=25 C
20
Test current IZ
5mA
10
0
0
1
2
3
4
5
6
7
8
9
10 V
VZ
BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED)
BZX55...
mA
30
TJ=25 C
C10
C12
C15
IZ
20
C18
C22
C27
C33
Test current IZ
10
5mA
0
0
10
20
30
VZ
40 V
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