R 0.5W SILIC O N PLA N A R ZEN ER D IO D ES S E M I C O N D U C T O R D O -35 FEA TU RES The zener voltage are graded according to the internationalE24 standard.O ther voltage tolerance and higher zenervoltage 1.083(27.5) MIN on request 0.079(2.0) MAX DIA 0.150(3.8) MAX M EC H A N IC A L D A TA Case: D O -35 glass case 1.083(27.5) MIN Polarity:C olor band denotes cathode end 0.020(0.52) MAX DIA W eight:Approx. 0.13 gram D im ensions in inches and (m illim eters) A BSO LU TE M A XIM U M RA TIN G S(LIM ITIN G V A LU ES) (TA = 25 C ) Zener current see table "C haracteristics" P tot TJ T S TG P ow er dissipation atT A =50 C Junction tem perature S torage tem perature range 500 1) mW 175 C -65 to+175 C 1) Valid provided thata distance of 8m m from case are kept at am bient tem perature ELEC TRIC A L C H A RA C TERISTIC S (TA= 25 C ) Therm alresistance junction to am bientair Forw ard voltage at IF =100m A R JA VF 1) Valid provided thata distance of 8m m from case are kept at am bient tem perature 300 1) 1.0 K /W V Zener Voltage range 1) VZ NOM V BZX 55/C 0 V 8 3) IZT for VZT mA 0.8 2) IR and IR 2) at VR mA V 0.73...0.83 <8 A -- <50 A -- TK VZ V %/K -- -0.26...-0.23 BZX 55/C 2 V 0 2.0 1.9...2.1 <100 <200 BZX 55/C 2 V 4 2.4 2.28...2.56 <50 <100 BZX 55/C 2 V 7 2.7 2.5...2.9 <10 <50 BZX 55/C 3 V 0 3.0 2.8...3.2 BZX 55/C 3 V 3 3.3 3.1...3.5 BZX 55/C 3 V 6 3.6 3.4...3.8 BZX 55/C 3 V 9 3.9 3.7...4.1 BZX 55/C 4 V 3 4.3 4.0...4.6 <75 <1 <20 -0.06...-0.03 BZX 55/C 4 V 7 4.7 4.4...5.0 <60 <0.5 <10 -0.05...+0.02 BZX 55/C 5 V 1 5.1 4.8...5.4 <35 <550 BZX 55/C 5 V 6 5.6 5.2...6.0 <25 <450 BZX 55/C 6 V 2 6.2 5.8...6.6 <10 <200 BZX 55/C 6 V 8 6.8 6.4...7.2 <8 <150 BZX 55/C 7 V 5 7.5 7.0...7.9 <7 BZX 55/C 8 V 2 8.2 7.7...8.7 <7 BZX 55/C 9 V 1 9.1 8.5...9.6 <10 BZX 55/C 10 10 9.4...10.6 <15 <70 BZX 55/C 11 11 10.4...11.6 <20 <70 BZX 55/C 12 12 11.4...12.7 <20 <90 9.1 BZX 55/C 13 13 12.4...14.1 <26 <110 10 BZX 55/C 15 15 13.8...15.6 <30 <110 11 BZX 55/C 16 16 15.3...17.1 <40 <170 12 BZX 55/C 18 18 16.8...19.1 <50 <170 BZX 55/C 20 20 18.8...21.2 <55 BZX 55/C 22 22 20.8...23.3 <55 BZX 55/C 24 24 22.8...25.6 <80 BZX 55/C 27 27 25.1...28.9 <80 5 -0.09...-0.06 <4 <85 <600 <2 <40 1 -0.08...-0.05 -0.02...+0.02 -0.05...+0.05 1 <50 <0.1 <2 2 0.03...0.06 3 0.03...0.07 5 0.03...0.07 6.2 0.03...0.08 6.8 0.03...0.09 7.5 0.03...0.1 8.2 0.03...0.11 13 15 <220 16 18 20 0.04...0.12 Zener Voltage range 1) VZ NOM V IZT for VZT mA 2) IR and IR 2) at VR mA V BZX 55/C 30 30 BZX 55/C 33 33 BZX 55/C 36 36 34...38 BZX 55/C 39 39 BZX 55/C 43 A A 28...32 TK V2 V <2 <80 <220 37...41 <90 <500 43 40...46 <90 <500 BZX 55/C 47 47 44...50 <110 <600 36 BZX 55/C 51 51 48...54 <125 <700 39 <700 5 31...35 1 24 27 30 <5 33 BZX 55/C 56 56 52...60 <135 BZX 55/C 62 62 58...66 <150 BZX 55/C 68 68 64...72 <200 BZX 55/C 75 75 70...79 <250 BZX 55/C 82 82 77...87 <300 <1500 BZX 55/C 91 91 85...96 <450 <2000 BZX 55/C 100 100 94...106 <450 <5000 BZX 55/C 110 110 104...116 <600 <5000 BZX 55/C 120 120 114...127 <800 <5500 BZX 55/C 130 130 124...141 <950 <6000 BZX 55/C 150 150 138...156 <1250 <6500 110 BZX 55/C 160 160 153...171 <1400 <7000 120 BZX 55/C 180 180 168...191 <1700 <8500 130 BZX 55/C 200 200 188...212 <2000 <10000 150 2.5 1 %/K 22 0.5 0.04...0.12 43 47 <1000 51 <0.1 56 0.25 62 <10 68 75 82 91 0.1 0.05...0.12 100 1) Teated with pulses tp=20ms 2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 3) The BZX55-C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole. BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) BZX55... mA 50 C2V7 C0V8 40 C3V9 C3V3 C5V6 C4V7 C8V2 C6V8 IZ 30 TJ=25 C 20 Test current IZ 5mA 10 0 0 1 2 3 4 5 6 7 8 9 10 V VZ BREAKDOWN CHARACTERISTICS AT TJ= CONSTANT (PULSED) BZX55... mA 30 TJ=25 C C10 C12 C15 IZ 20 C18 C22 C27 C33 Test current IZ 10 5mA 0 0 10 20 30 VZ 40 V