AOSMD AO4442 75v n-channel mosfet Datasheet

AO4442
75V N-Channel MOSFET
General Description
Product Summary
The AO4442 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages from 4.5V to 25V. This
device is suitable for use as a load switch or in PWM
applications.
VDS
75V
3.1A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 130mΩ
RDS(ON) (at VGS = 4.5V)
< 165mΩ
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 2: June 2011
Steady-State
Steady-State
A
3.1
W
2
TJ, TSTG
Symbol
t ≤ 10s
V
20
PD
TA=70°C
±25
2.5
IDM
TA=25°C
Power Dissipation B
Units
V
3.1
ID
TA=70°C
Maximum
75
RθJA
RθJL
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-55 to 150
Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=10mA, VGS=0V
Typ
75
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
TJ=55°C
100
nA
2.4
3
V
100
130
180
220
165
mΩ
1
V
3.5
A
350
pF
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=2A
120
gFS
Forward Transconductance
VDS=5V, ID=3.1A
8.2
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.79
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
303
VGS=0V, VDS=37.5V, f=1MHz
µA
5
VDS=0V, VGS= ±25V
VGS=10V, ID=3.1A
37
2.2
mΩ
S
pF
17
VGS=0V, VDS=0V, f=1MHz
Units
V
VDS=60V, VGS=0V
IDSS
Crss
Max
pF
Ω
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.2
6.5
nC
Qg(4.5V) Total Gate Charge
2.46
3.5
nC
Qgs
Gate Source Charge
VGS=10V, VDS=37.5V, ID=3.1A
1
nC
Qgd
Gate Drain Charge
1.34
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
2.3
ns
tD(off)
Turn-Off DelayTime
15.6
ns
tf
Turn-Off Fall Time
1.9
ns
trr
Qrr
VGS=10V, VDS=37.5V, RL=12Ω,
RGEN=3Ω
IF=3.1A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs
22
30
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: June 2011
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Page 2 of 5
AO4442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
15
5V
10V
VDS=5V
4.5V
12
12
6V
9
ID(A)
ID (A)
9
4V
6
6
125°C
3
3
25°C
VGS=3.5V
0
0
0
1
2
3
4
0
5
1
2.2
200
2
Normalized On-Resistance
220
RDS(ON) (mΩ )
180
VGS=4.5V
140
120
100
VGS=10V
80
0
2
4
4
5
6
VGS=10V
ID=3.1A
1.8
17
5
2
VGS=4.5V10
1.6
1.4
1.2
ID=2A
1
0.8
6
8
0
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
240
1.0E+01
ID=3.1A
220
1.0E+00
40
200
1.0E-01
180
IS (A)
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
160
2
125°C
160
140
125°C
1.0E-02
1.0E-03
120
25°C
25°C
1.0E-04
100
1.0E-05
80
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: June 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
10
VDS=37.5V
ID=3.1A
400
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
300
200
Coss
100
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
10000
100.0
TA=25°C
10µs
1000
100µs
1.0
RDS(ON)
limited
0.1
Power (W)
ID (Amps)
10.0
1ms
100
10ms
TJ(Max)=150°C
TA=25°C
10
10s
DC
0.0
1
0.01
0.1
1
10
VDS (Volts)
100
1000
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: June 2011
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Page 4 of 5
AO4442
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 2: June 2011
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5
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