Spec. No. : C854M3 Issued Date : 2004.08.20 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AM3 Description • High BVCEO • High current capability Symbol Outline BTB1236AM3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol Limits Unit VCBO VCEO VEBO IC ICP -180 -160 -5 -1.5 -3 0.6 1 2 V V V A A W W W °C/W °C/W °C/W °C °C PD Thermal Resistance, Junction to Ambient RθJA Junction Temperature Storage Temperature Tj Tstg (Note 1) (Note 2) (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on ceramic with area measuring 40×40×1 mm BTB1236AM3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C854M3 Issued Date : 2004.08.20 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 - Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 - Unit V V V µA µA V V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range BTB1236AM3 K 60~120 P 82~190 Q 120~200 CYStek Product Specification Spec. No. : C854M3 Issued Date : 2004.08.20 CYStech Electronics Corp. Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Saturation Voltage-(mV) Current Gain---HFE VCE=5V 100 10 1 100 10 1 10 100 1000 10000 1 Collector Current---IC(mA) On Voltage vs Collector Current 10000 Power Derating Curve 10000 2.5 Power Dissipation---PD(W) VBE(ON)@VCE=5V On Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 See Note 3 on page 1 2 See Note 2 on page 1 1.5 1 0.5 0 100 1 10 100 1000 Collector Current---IC(mA) BTB1236AM3 10000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C854M3 Issued Date : 2004.08.20 CYStech Electronics Corp. Revised Date : Page No. : 4/4 SOT-89 Dimension Marking: A 2 1 3 H C AV2 D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1236AM3 CYStek Product Specification