DMN2230U N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 1, 2 and 3) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT23 D G S Top View Internal Schematic Top View Ordering Information (Note 4) Part Number DMN2230U-7 Notes: Case SOT23 Packaging 3000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. Marking Information 22N Date Code Key Year 2007 Code U Month Code Jan 1 [email protected] 2008 V Feb 2 2009 W Mar 3 2010 X Apr 4 YM NEW PRODUCT • Mechanical Data 22N = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) 2011 Y May 5 2012 Z Jun 6 2013 A Jul 7 www.zpsemi.com Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D 1 of 2 DMN2230U N-CHANNEL ENHANCEMENT MODE MOSFET Maximum Ratings @TA = 25°C unless otherwise specified NEW PRODUCT Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current (Note 6) Thermal Characteristics Symbol VDSS VGSS ID IDM Value 20 ±12 2.0 7 Units V V A A Symbol PD RθJA TJ, TSTG Value 600 208 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±10 V μA μA VGS = 0V, ID = 10μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V RDS (ON) ⎯ 81 113 170 110 145 230 mΩ |Yfs| VSD ⎯ ⎯ 5 0.8 ⎯ 1.1 S V VDS = VCS, ID = 250μA VGS = 4.5V, ID = 2.5A VGS = 2.5V, ID = 1.5A VGS = 1.8V, ID = 1.0A VDS = 5V, ID = 2.4A VGS = 0V, IS = 1.05A Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 188 44 30 2.3 0.3 0.5 8 3.8 19.6 8.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF nC nC nC ns Test Condition VDS = 10V, VGS = 0V f = 1.0MHz VDS = 10V, ID = 11.6A VDD = 10V, RL = 10Ω ID = 1A, VGEN = 4.5V, RG = 6Ω 3. Device mounted on FR-4 PCB, or minimum recommended pad layout 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. [email protected] www.zpsemi.com 2 of 2