ZP DMN2230U N-channel enhancement mode mosfet Datasheet

DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
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•
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•
•
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Low On-Resistance
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110 mΩ @ VGS = 4.5V
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145 mΩ @ VGS = 2.5V
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230 mΩ @ VGS = 1.8V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1, 2 and 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
SOT23
D
G
S
Top View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMN2230U-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
Marking Information
22N
Date Code Key
Year
2007
Code
U
Month
Code
Jan
1
[email protected]
2008
V
Feb
2
2009
W
Mar
3
2010
X
Apr
4
YM
NEW PRODUCT
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Mechanical Data
22N = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
2011
Y
May
5
2012
Z
Jun
6
2013
A
Jul
7
www.zpsemi.com
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
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DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings @TA = 25°C unless otherwise specified
NEW PRODUCT
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Thermal Characteristics
Symbol
VDSS
VGSS
ID
IDM
Value
20
±12
2.0
7
Units
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
600
208
-55 to +150
Units
mW
°C/W
°C
@TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±10
V
μA
μA
VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.5
⎯
1.0
V
RDS (ON)
⎯
81
113
170
110
145
230
mΩ
|Yfs|
VSD
⎯
⎯
5
0.8
⎯
1.1
S
V
VDS = VCS, ID = 250μA
VGS = 4.5V, ID = 2.5A
VGS = 2.5V, ID = 1.5A
VGS = 1.8V, ID = 1.0A
VDS = 5V, ID = 2.4A
VGS = 0V, IS = 1.05A
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
188
44
30
2.3
0.3
0.5
8
3.8
19.6
8.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
ns
Test Condition
VDS = 10V, VGS = 0V
f = 1.0MHz
VDS = 10V, ID = 11.6A
VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
3. Device mounted on FR-4 PCB, or minimum recommended pad layout
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
[email protected]
www.zpsemi.com
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