FDP7030BL/FDB7030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 60 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V • Critical DC electrical parameters specified at elevated temperature These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • 175°C maximum junction temperature rating It has been optimized for low gate charge, low RDS(ON) and fast switching speed. D D G G D G S TO-220 TO-263AB FDP Series S FDB Series Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current A PD Parameter – Continuous (Note 1) 60 – Pulsed (Note 1) 180 60 W 0.4 W/°C –65 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB7030BL FDB7030BL 13’’ 24mm 800 units FDP7030BL FDP7030BL Tube n/a 45 2003 Fairchild Semiconductor Corporation FDP7030BL/FDB7030BL Rev D1(W) FDP7030BL/FDB7030BL October 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 73 mJ 60 A Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 60 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 30 V mV/°C 22 (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On– Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C 1 1.9 3 V mV/°C –5 ID(on) On–State Drain Current VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 25 A VGS= 10 V, ID = 30 A, TJ=125°C VGS = 10 V, VDS = 10 V gFS Forward Transconductance VDS = 10V, ID = 30 A 85 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1760 pF 440 pF 185 pF VGS = 15 mV, f = 1.0 MHz 1.2 Ω VDD = 15V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 22 ns 6.8 8.5 10.1 9 12 18 30 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 30 48 ns tf Turn–Off Fall Time 19 33 ns Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5 V ID = 30 A, 5.4 nC 6.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 30 A IF = 30 A, diF/dt = 100 A/µs (Note 1) 0.92 60 A 1.3 V 30 nS 20 nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDP7030BL/FDB7030BL Rev D1(W) FDP7030BL/FDB7030BL Electrical Characteristics FDP7030BL/FDB7030BL Typical Characteristics 1.8 180 6.0V ID, DRAIN CURRENT (A) 150 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS=10V 4.5V 120 4.0V 90 3.5V 60 30 3.0V VGS = 3.5V 3.5V 1.6 1.4 4.0V 4.5V 5.0V 1.2 6.0V 10V 1 0.8 0 0 1 2 3 4 0 5 20 Figure 1. On-Region Characteristics. 80 100 0.030 ID = 30A VGS =10V ID = 30A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.6 0.025 0.020 TA = 125oC 0.015 0.010 o TA = 25 C 0.005 -50 -25 0 25 50 75 100 125 o TJ, JUNCTION TEMPERATURE ( C) 150 2 175 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 90 1000 VDS = 5V IS, REVERSE DRAIN CURRENT (A) VGS = 0V 75 ID, DRAIN CURRENT (A) 40 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 60 45 o TA = 125 C o -55 C 30 o 25 C 15 100 TA = 125oC 10 1 25oC 0.1 -55oC 0.01 0.001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP7030BL/FDB7030BL Rev D1(W) 2500 VDS = 10V ID = 30A f = 1MHz VGS = 0 V 20V 2000 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 4 1500 1000 Coss 2 500 0 0 Crss 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 30 0 35 10 15 20 25 30 Figure 8. Capacitance Characteristics. 5000 P(pk), PEAK TRANSIENT POWER (W) 1000 10µs RDS(ON) LIMIT 100µs 100 1mS 10mS 100m DC 10 VGS = 10V SINGLE PULSE RθJC = 2.5oC/W o TA = 25 C 1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJC = 2.5°C/W TA = 25°C 4000 3000 2000 1000 0 0.00001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) Ciss 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 2.5 °C/W 0.2 0.1 P(pk 0.1 t1 t2 TJ - TA = P * RθJC(t) Duty Cycle, D = t1 / t2 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. FDP7030BL/FDB7030BL Rev D1(W) FDP7030BL/FDB7030BL Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5