FDBL86561_F085 N-Channel PowerTrench® MOSFET 60 V, 300 A, 1.1 mΩ Features Typical RDS(on) = 0.85 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A D UIS Capability RoHS Compliant Qualified to AEC Q101 Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers S Integrated Starter/Alternator For current package drawing, please refer to the Fairchild website at http://www.fairchildsemi.com/packing_dwg/PKG‐ PSOF08A.pdf Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Gate-to-Source Voltage Ratings 60 Units V ±20 V Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 300 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) A 1167 mJ Power Dissipation 429 W Derate Above 25oC 2.86 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) -55 to + 175 oC 0.35 oC/W 43 oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.57mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDBL86561 Device FDBL86561_F085 ©2015 Fairchild Semiconductor Corporation FDBL86561_F085 Rev. C2 Package MO-299A - 1 - - www.fairchildsemi.com FDBL86561_F085 N-Channel PowerTrench® MOSFET January 2015 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V 60 - - V - - 1 μA - - 3 mA - - ±100 nA VDS = 60V TJ = 25oC VGS = 0V TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V 2.0 3.0 4.0 V - 0.85 1.1 mΩ - 1.5 2.2 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate-to-Source Gate Charge Qgd Gate-to-Drain “Miller“ Charge - VDS = 30V, VGS = 0V, f = 1MHz VDD = 48V ID = 80A - 13650 - pF - 3375 - pF - 255 - pF - 2.3 - Ω - 170 220 nC - 24 32 nC - 56 - nC 24 - nC ns Switching Characteristics ton Turn-On Time - - 137 td(on) Turn-On Delay - 45 - ns tr Rise Time - 61 - ns td(off) Turn-Off Delay - 80 - ns tf Fall Time - 41 - ns toff Turn-Off Time - - 156 ns V VDD = 30V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge ISD =80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=48V - 107 139 ns - 183 265 nC Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDBL86561_F085 Rev. C2 2 www.fairchildsemi.com FDBL86561_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 500 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE 400 VGS = 10V CURRENT LIMITED BY SILICON 300 200 100 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 IDM, PEAK CURRENT (A) VGS = 10V 1000 TC = 25oC FOR TEMPERATURES 100 ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDBL86561_F085 Rev. C2 3 www.fairchildsemi.com FDBL86561_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 2000 100 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10 1ms 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.1 10ms 100ms 300 STARTING TJ = 150oC 0.01 0.1 1 10 100 1000 10000 Figure 6. Unclamped Inductive Switching Capability 400 IS, REVERSE DRAIN CURRENT (A) VDD = 5V TJ = 25oC 120 TJ = 175oC 60 TJ = -55oC 2 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 180 0 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 240 100 1 0.001 1 10 100 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 2000 1000 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 TJ = 175 oC 10 1 0.1 0.0 7 TJ = 25 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 400 400 300 5V 200 15V Top 10V 8V 7V 6V 5.5V 5V Bottom ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS 80μs PULSE WIDTH Tj=25oC 100 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5V 200 VGS 15V Top 10V 8V 5.5V 7V 6V 5.5V 5V Bottom 100 80μs PULSE WIDTH Tj=175oC 0 5 Figure 9. Saturation Characteristics FDBL86561_F085 Rev. C2 300 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDBL86561_F085 N-Channel PowerTrench® MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 20 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 16 12 TJ = 175oC TJ = 25oC 8 4 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.6 1.2 0.8 ID = 80A VGS = 10V 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized RDSON vs. Junction Temperature 1.2 VGS = VDS ID = 250μA 1.2 ID = 1mA 1.1 0.9 1.0 0.6 0.9 0.3 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs. Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10000 Ciss 1000 Coss 100 f = 1MHz VGS = 0V 10 0.1 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage FDBL86561_F085 Rev. C2 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature 100000 CAPACITANCE (pF) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.4 10 ID = 80A VDD = 30V 8 VDD =24V 6 VDD = 36V 4 2 0 0 20 40 60 80 100 120 140 160 180 Qg, GATE CHARGE(nC) Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDBL86561_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I72 FDBL86561_F085 Rev. C2 6 www.fairchildsemi.com