ON BS170ZL1G Small signal mosfet 500 ma, 60 volts n−channel to−92 (to−226) Datasheet

BS170
Preferred Device
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
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• Pb−Free Package is Available*
500 mA, 60 Volts
RDS(on) = 5.0 W
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VDS
60
Vdc
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current (Note)
ID
0.5
Adc
Total Device Dissipation @ TA = 25°C
PD
350
mW
TJ, Tstg
−55 to
+150
°C
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Operating and Storage Junction
Temperature Range
N−Channel
D
G
S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
TO−92 (TO−226)
CASE 29
STYLE 30
12
3
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWWG
G
1
Drain
2
Gate
3
Source
BS170 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 5
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
BS170/D
BS170
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
−
0.01
10
nAdc
V(BR)DSS
60
90
−
Vdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(Th)
0.8
2.0
3.0
Vdc
Static Drain−Source On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
rDS(on)
−
1.8
5.0
W
ID(off)
−
−
0.5
mA
gfs
−
200
−
mmhos
Ciss
−
−
60
pF
Turn−On Time
(ID = 0.2 Adc) See Figure 1
ton
−
4.0
10
ns
Turn−Off Time
(ID = 0.2 Adc) See Figure 1
toff
−
4.0
10
ns
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
Drain−Source Breakdown Voltage
(VGS = 0, ID = 100 mAdc)
ON CHARACTERISTICS (Note 1)
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
BS170
TO−92 (TO−226)
1000 Unit/Tube
BS170G
TO−92 (TO−226)
(Pb−Free)
1000 Unit/Tube
BS170RLRA
TO−92 (TO−226)
2000 Tape & Reel
BS170RLRAG
TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
BS170RLRM
TO−92 (TO−226)
2000 Tape & Reel
BS170RLRMG
TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
BS170RLRP
TO−92 (TO−226)
2000 Tape & Reel
BS170RLRPG
TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
BS170RL1
TO−92 (TO−226)
2000 Tape & Reel
BS170RL1G
TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
BS170ZL1
TO−92 (TO−226)
2000 Tape & Reel
BS170ZL1G
TO−92 (TO−226)
(Pb−Free)
2000 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
BS170
RESISTIVE SWITCHING
+25 V
ton
Vin
PULSE GENERATOR
50 W
125 W
40 pF
50 W
TO SAMPLING SCOPE
50 W INPUT
Vout
20 dB
50 W ATTENUATOR
toff
90%
10%
OUTPUT
V
INVERTED out
1.0 MW
90%
50%
10%
INPUT
Vin
(Vin Amplitude 10 Volts)
Figure 2. Switching Waveforms
Figure 1. Switching Test Circuit
2.0
2.0
VDS = VGS
ID = 1.0 mA
1.6
I D(on) , DRAIN CURRENT (AMPS)
VGS(th), THRESHOLD VOLTAGE
PULSE
WIDTH
1.2
0.8
0.4
VGS = 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
6.0 V
0.8
5.0 V
0.4
4.0 V
0
50
100
0
50
TJ, JUNCTION TEMPERATURE (°C)
150
0
Figure 3. VGS(th) Normalized versus Temperature
100
VGS = 10 V
9.0 V
1.6
VGS = 0 V
80
8.0 V
1.2
7.0 V
0.8
6.0 V
0.4
60
40
Ciss
20
5.0 V
Coss
4.0 V
0
20
10
30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4.0
Figure 4. On−Region Characteristics
C, CAPACITANCE (pF)
I D(on) , DRAIN CURRENT (AMPS)
2.0
1.0
2.0
3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Crss
40
0
Figure 5. Output Characteristics
10
20
30
40
50
60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus
Drain−To−Source Voltage
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3
BS170
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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BS170/D
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