BS170 Preferred Device Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) Features http://onsemi.com • Pb−Free Package is Available* 500 mA, 60 Volts RDS(on) = 5.0 W MAXIMUM RATINGS Rating Symbol Value Unit VDS 60 Vdc VGS VGSM ± 20 ± 40 Vdc Vpk Drain Current (Note) ID 0.5 Adc Total Device Dissipation @ TA = 25°C PD 350 mW TJ, Tstg −55 to +150 °C Drain −Source Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Operating and Storage Junction Temperature Range N−Channel D G S Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. NOTE: The Power Dissipation of the package may result in a lower continuous drain current. TO−92 (TO−226) CASE 29 STYLE 30 12 3 MARKING DIAGRAM & PIN ASSIGNMENT BS170 AYWWG G 1 Drain 2 Gate 3 Source BS170 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 5 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: BS170/D BS170 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS − 0.01 10 nAdc V(BR)DSS 60 90 − Vdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(Th) 0.8 2.0 3.0 Vdc Static Drain−Source On Resistance (VGS = 10 Vdc, ID = 200 mAdc) rDS(on) − 1.8 5.0 W ID(off) − − 0.5 mA gfs − 200 − mmhos Ciss − − 60 pF Turn−On Time (ID = 0.2 Adc) See Figure 1 ton − 4.0 10 ns Turn−Off Time (ID = 0.2 Adc) See Figure 1 toff − 4.0 10 ns OFF CHARACTERISTICS Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) ON CHARACTERISTICS (Note 1) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) SMALL−SIGNAL CHARACTERISTICS Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping† BS170 TO−92 (TO−226) 1000 Unit/Tube BS170G TO−92 (TO−226) (Pb−Free) 1000 Unit/Tube BS170RLRA TO−92 (TO−226) 2000 Tape & Reel BS170RLRAG TO−92 (TO−226) (Pb−Free) 2000 Tape & Reel BS170RLRM TO−92 (TO−226) 2000 Tape & Reel BS170RLRMG TO−92 (TO−226) (Pb−Free) 2000 Tape & Reel BS170RLRP TO−92 (TO−226) 2000 Tape & Reel BS170RLRPG TO−92 (TO−226) (Pb−Free) 2000 Tape & Reel BS170RL1 TO−92 (TO−226) 2000 Tape & Reel BS170RL1G TO−92 (TO−226) (Pb−Free) 2000 Tape & Reel BS170ZL1 TO−92 (TO−226) 2000 Tape & Reel BS170ZL1G TO−92 (TO−226) (Pb−Free) 2000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BS170 RESISTIVE SWITCHING +25 V ton Vin PULSE GENERATOR 50 W 125 W 40 pF 50 W TO SAMPLING SCOPE 50 W INPUT Vout 20 dB 50 W ATTENUATOR toff 90% 10% OUTPUT V INVERTED out 1.0 MW 90% 50% 10% INPUT Vin (Vin Amplitude 10 Volts) Figure 2. Switching Waveforms Figure 1. Switching Test Circuit 2.0 2.0 VDS = VGS ID = 1.0 mA 1.6 I D(on) , DRAIN CURRENT (AMPS) VGS(th), THRESHOLD VOLTAGE PULSE WIDTH 1.2 0.8 0.4 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 0.8 5.0 V 0.4 4.0 V 0 50 100 0 50 TJ, JUNCTION TEMPERATURE (°C) 150 0 Figure 3. VGS(th) Normalized versus Temperature 100 VGS = 10 V 9.0 V 1.6 VGS = 0 V 80 8.0 V 1.2 7.0 V 0.8 6.0 V 0.4 60 40 Ciss 20 5.0 V Coss 4.0 V 0 20 10 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 4.0 Figure 4. On−Region Characteristics C, CAPACITANCE (pF) I D(on) , DRAIN CURRENT (AMPS) 2.0 1.0 2.0 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Crss 40 0 Figure 5. Output Characteristics 10 20 30 40 50 60 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance versus Drain−To−Source Voltage http://onsemi.com 3 BS170 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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