Transistors SMD Type PNP Transistors BC857S (KC857S) ■ Features ● High current gain ● Low collector-emitter saturation voltage ● For AF input stages and driver applications ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating VCBO -50 VCEO -45 VCES -50 VEBO -5 Collector Current - Continuous IC -200 mA Collector Power Dissipation PC 300 mW 2.4 mW/℃ RthJA 415 ℃/W TJ 150 Tstg -55 to 150 Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage -Derate above 25°C Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min VCBO Ic= -100 μA， IE= 0 -50 VCEO Ic= -10 mA， IB= 0 -45 VCES Ic= -100 uA， VBE= 0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC= 0 -5 Collector-base cut-off current ICBO Emitter cut-off current IEBO Collector- base breakdown voltage Collector- emitter breakdown voltage Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base-emitter on voltage VBE(on) Typ Max V VCB= -30 V , IE= 0 -15 VCB= -30 V , IE= 0 , Ta = 150℃ VEB= -5V , IC=0 -4 uA nA -0.3 IC=-100mA, IB=-5mA -0.65 IC=-100 mA, IB=-5mA -1.2 -0.6 nA -100 IC=-10 mA, IB=-0.5mA VCE= -5V, IC=- 2mA Unit V -0.75 VCE= -5V, IC= -10mA -0.82 DC current gain hFE VCE= -5V, IC= -2mA Noise Figure NF IC =- 0.2 mA, VCE =- 5V RS = 2 kΩ, f = 1 kHz, BW = 200 Hz Collector output capacitance Cob VCB= -10V, IE=0,f=1MHz 3.5 pF VCE= -5V, IC= -10mA,f=100MHz 200 MHz Transition frequency fT 125 630 2.5 dB ■ Marking Marking 3C www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BC857S (KC857S) VCES AT - COLLECTOR EMITTE R VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current 500 V CE = 5V 300 - 40 °C 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) B = 10 1 0.8 25 °C 0.1 125 °C 0 0.1 25 °C 1 25 °C 125 °C V CE = 5V 0.2 0.2 1 10 100 I C - COLLECTOR CURRE NT (mA) 300 0 0.1 100 V CB = 50V BVCER - BREAKDOWN VOLTAGE (V) Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) - 40°C 0.4 0.4 1 10 I C - COLLECTOR CURRE NT (mA) 100 200 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 95 10 90 85 1 80 0.1 0.01 25 2 300 Base Emitter ON Voltage vs Collector Current 0.6 125 °C - 40 °C 1 10 100 I C - COLLECTOR CURRE NT (mA) 0.8 - 40 °C 0.6 0 0.1 0.2 0.05 Base-Emitter Saturation Voltage vs Collector Current 1.2 = 10 0.15 25 °C 200 0 0.01 0.3 0.25 125 °C 100 Collector-Emitter Saturation Voltage vs Collector Current V BEON - BAS E EMITTER ON VOLTAGE (V) 400 V BESAT - BASE EM ITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN ■ Typical Characterisitics 75 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) www.kexin.com.cn 125 70 0.1 1 10 RESISTANCE (kΩ) 100 1000 Transistors SMD Type PNP Transistors BC857S (KC857S) ■ Typical Characterisitics Input and Output Capacitance vs Reverse Voltage V CE - COLLECTOR-EMITTER VOLTAGE (V) Collector Saturation Region 4 Ic = 2 100 uA 300 mA 50 mA 1 0 100 300 700 I B - BASE CURRENT (uA) CAPACITANCE (pF) 3 f T - GAIN BANDWIDTH PRODUCT (MHz) 100 Ta = 25°C 2000 4000 f = 1.0 MHz 10 Cib Cob 0.1 1 100 Switching Times vs Collector Current Gain Bandwidth Product vs Collector Current 300 40 Vce = 5V 270 ts 240 30 TIME (nS) 210 20 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 10 tf 60 30 1 10 20 50 I C - COLLECTOR CURRENT (mA) 100 150 0 10 tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) 300 Power Dissipation vs Ambient Temperat ure PD - POWE R DIS SIPATION (W) 0 10 V CE - COLLECTOR VOLTAGE (V) 500 400 300 200 100 0 0 25 50 75 100 TE MPE RATURE (°C) 125 150 www.kexin.com.cn 3