UMS CHA2391 36-40ghz very low noise amplifier Datasheet

CHA2391
RoHS COMPLIANT
36-40GHz Very Low Noise Amplifier
GaAs Monolithic Microwave IC
Vd
Description
The CHA2391 is a two-stage wide band
monolithic low noise amplifier.
25
50
IN
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
OUT
Vg 1
Vg 2
Gain (dB)
Main Features
■ Broad band performance 36-40GHz
■ 2.5dB noise figure, 36-40GHz
■ 15dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size: 1.67 x 1.03 x 0.1mm
20
5
16
4
12
3
8
2
4
1
0
0
30
31
32
33
34
35
36
37
38
39
40
Frequency (GHz)
On wafer typical measurements
.
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Fop
Operating frequency range
NF
Noise figure, 36-40GHz
G
Gain
P1dB
Min
Typ
36
2.5
12
Output power at 1dB gain compression
Max
Unit
40
GHz
3
dB
15
dB
9
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA23912240 -28-Aug.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
NF (dB)
It is supplied in chip form.
36-40GHz Very Low Noise Amplifier
CHA2391
Electrical Characteristics
Tamb = +25°C, Bias Conditions:Vd = +4V
Symbol
Fop
G
Parameter
Min
Operating frequency range
36
Gain (1)
12
Typ
Max
Unit
40
Ghz
15
dB
∆G
Gain flatness (1)
± 0.5
± 1.0
dB
NF
Noise figure (1)
2.5
3
dB
VSWRin
Input VSWR (1)
3.0:1
VSWRout
Ouput VSWR (1)
3.0:1
IP3
3rd order intercept point
Output power at 1dB gain compression
P1dB
Vd
DC Voltage
Id
Vd
Vg
-2
Drain bias current (2)
20
dBm
12
dBm
4
-0.25
45
4.5
+0.4
V
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the
indicated parameters should be improved.
(2) 45 mA is the typical bias current used for on wafer measurements, with Vg1= Vg2.
For optimum noise figure, the bias current could be reduced down to 30 mA, adjusting the
Vg1,2 voltage.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
5.0
V
Vg
Gate bias voltage
-2.0 to +0.4
V
Vdg
Maximum drain to gate voltage (Vd-Vg)
+5.0
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Pin
Maximum continuous input power
+1
dBm
Top
Operating temperature range
-40 to +85
°C
Tsg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA23912240 -28-Aug.-02
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Very Low Noise Amplifier
CHA2391
Typical Results
Chip Typical Response (On wafer Sij)
Tamb = +25°C
Bias conditions: Vd = +4V, Id=45mA
Freq
MS11
PS11
MS12
PS12
MS21
PS21
MS22
PS22
GHz
dB
°
dB
°
dB
°
dB
°
10
12
14
16
18
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
-6,21
-6,33
-6,29
-6,08
-5,84
-5,54
-5,43
-5,30
-5,29
-5,35
-5,54
-5,87
-6,47
-7,39
-8,77
-10,69
-12,44
-12,19
-10,65
-9,85
-9,98
-10,94
-12,52
-13,72
-13,22
-11,65
-10,30
-8,90
-7,51
-6,22
-5,17
-4,24
-3,18
-2,51
-2,04
-1,62
154,25
141,75
127,36
114,92
101,82
86,62
78,44
68,96
58,88
47,97
35,38
21,00
3,87
-16,23
-41,92
-77,04
-127,88
170,79
120,05
82,96
54,87
33,47
20,51
17,24
18,64
9,29
-3,86
-20,55
-38,62
-59,90
-81,47
-102,42
-122,95
-143,29
-161,80
-178,03
-62,67
-57,99
-55,17
-55,88
-53,92
-51,45
-50,53
-49,42
-49,04
-49,34
-47,96
-46,55
-44,77
-43,13
-40,03
-37,67
-35,70
-33,04
-31,11
-29,60
-28,64
-27,69
-26,89
-26,15
-25,53
-25,06
-24,91
-24,74
-24,62
-24,63
-24,78
-25,30
-25,65
-26,29
-27,21
-27,82
-132,87
-156,02
173,41
168,49
135,46
138,48
139,32
132,07
122,68
123,59
126,63
123,65
125,28
124,81
123,61
115,28
105,15
93,43
75,77
58,30
42,10
26,41
9,83
-5,87
-22,03
-38,88
-56,23
-72,65
-88,50
-105,66
-122,84
-139,10
-155,88
-173,89
170,58
157,24
-22,58
-16,83
-12,52
-9,73
-7,54
-6,13
-5,41
-4,82
-4,06
-3,25
-2,19
-0,88
0,38
1,88
3,63
5,50
7,35
9,18
10,75
12,14
13,37
14,27
14,95
15,28
15,46
15,53
15,40
15,17
14,89
14,54
14,05
13,39
12,59
11,55
10,40
9,39
67,85
50,10
23,11
-5,37
-31,47
-55,85
-67,16
-77,06
-85,86
-94,05
-101,60
-110,55
-119,43
-128,85
-138,80
-151,53
-166,04
176,87
158,36
138,69
117,54
95,66
73,24
51,13
29,79
8,33
-12,86
-32,98
-52,97
-73,10
-93,80
-113,54
-133,30
-152,49
-170,65
172,00
-2,93
-3,89
-4,95
-5,86
-7,18
-8,65
-9,65
-10,46
-11,18
-11,33
-11,19
-11,01
-10,17
-9,43
-9,11
-8,70
-8,15
-7,69
-7,59
-7,80
-8,57
-9,80
-11,70
-14,31
-17,89
-23,80
-51,61
-26,28
-20,52
-17,09
-14,60
-12,92
-11,93
-11,14
-10,65
-9,69
-143,42
-164,87
178,26
161,51
144,01
131,69
127,30
125,73
124,83
125,87
124,77
125,49
122,17
117,25
109,58
103,41
94,50
83,88
70,55
56,02
40,66
25,19
9,54
-4,52
-18,79
-30,52
-16,72
118,15
111,87
101,92
89,21
73,66
59,95
47,16
35,08
20,78
Ref. : DSCHA23912240 -28-Aug.-02
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Very Low Noise Amplifier
CHA2391
Typical Results
Chip Typical Response (On wafer Sij)
Tamb = +25°C
Vd = +4V Id=45mA
20
Gain, RLoss (dB)
15
10
5
dBS11
dBS21
dBS22
0
-5
-10
-15
-20
20
25
30
35
40
45
50
Frequency (GHz)
20
5
16
4
12
3
8
2
4
1
0
0
30
31
32
33
34
35
36
37
38
39
NF (dB)
Gain (dB)
Typical Gain and Matching measurements on wafer
40
Frequency (GHz)
Typical Gain and Noise Figure measurements on wafer
Ref. : DSCHA23912240 -28-Aug.-02
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Very Low Noise Amplifier
CHA2391
Typical Results
Tamb = +25°C
Vd = 4V ; Id = 45mA
16
14
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0
-12
-10
-8
-6
-4
-2
0
2
4
Gain ( dB )
Output Power ( dBm )
Freq = 37GHz
16
6
Input Power ( dBm )
16
14
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0
-14
-12
-10
-8
-6
-4
-2
0
2
Gain ( dB )
Output Power ( dBm )
Freq = 39.5GHz
16
4
Input Power ( dBm )
Typical Output Power and Gain measurements in test jig
(included losses of the jig)
Ref. : DSCHA23912240 -28-Aug.-02
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Very Low Noise Amplifier
CHA2391
Typical Chip Assembly
To Vd DC Drain supply feed
47pF
50
25
IN
OUT
47pF
47pF
To Vg1 DC Gate supply feed
To Vg2 DC Gate supply feed
Note: Supply feed should be capacitively bypassed.
Mechanical data
1670 +/-35
1290
445
445
1030 +/-35
990
345
645
Bonding pad positions.
(Chip thickness: 100µm. All dimensions are in micrometers)
Ref. : DSCHA23912240 -28-Aug.-02
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Very Low Noise Amplifier
CHA2391
Chip Biasing
This chip is a two stage amplifier, and flexibility is provided by the access to number of pads.
The internal DC electrical schematic is given in order to use these pads in a safe way.
Vd
50
25
IN
OUT
Vds1
Vg 1
Not exceed Vds = 3.5Volt
Vds2
Vg 2
( internal Drain to Source voltage ).
We propose two standard biasing:
Low Noise and low consumption:
Vd = 3.5V and Id = 30mA.
Low Noise and high output power:
Vd = 4.0V and Id = 45mA. ( A separate access to
the gate voltages of the first and the output stage is provided. Nominal bias is obtained for a
typical current of 30mA for the output stage and 15 mA for the first stage. The first step to
bias the amplifier is to tune the Vg1 = -1V and Vg2 to drive 30mA for the full amplifier. Then
Vg1 is reduced to obtain 45 mA of current through the amplifier.
Ref. : DSCHA23912240 -28-Aug.-02
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
36-40GHz Very Low Noise Amplifier
CHA2391
Ordering Information
Chip form
:
CHA2391-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA23912240 -28-Aug.-02
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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