AON7810 30V General Description Dual N-Channel AlphaMOS Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6A ID (at VGS=10V) Application RDS(ON) (at VGS=10V) < 14mΩ RDS(ON) (at VGS=4.5V) < 20.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 3x3_Dual Bottom View Top View D1 D2 Top View D1 G1 D1 S2 D2 G2 D2 S1 G1 G2 Pin 1 S1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C ±20 V A 24 6 IDSM TA=70°C Units V 5 IDM TA=25°C Continuous Drain Current Maximum 30 6 ID TC=100°C S2 A 5 IAS 20 A Avalanche energy L=0.05mH C EAS 10 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25°C PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev0: Aug 2012 3.1 Steady-State Steady-State RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s W 8 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 20.5 °C -55 to 150 Typ 30 60 5 www.aosmd.com Max 40 75 6 Units °C/W °C/W °C/W Page 1 of 6 AON7810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA RDS(ON) Static Drain-Source On-Resistance 30 TJ=125°C TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VDS=5V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=6A µA 5 1.3 1 Units V 1 VGS=10V, ID=6A Output Capacitance Max VDS=30V, VGS=0V IDSS Coss Typ 1.8 ±100 nA 2.3 V 11.5 14 15.8 19 16 20.5 mΩ 1 V 6 A 25 0.73 mΩ S 542 pF 233 pF 31 pF 2 3 Ω 9 12.2 nC 4.3 5.8 nC 1.6 nC Gate Drain Charge 2 nC Turn-On DelayTime 4 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 3.5 ns 18 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time Qrr IF=6A, dI/dt=500A/µs 8.5 Body Diode Reverse Recovery Charge IF=6A, dI/dt=500A/µs 9.0 ns nC VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Aug 2012 www.aosmd.com Page 2 of 6 AON7810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V VDS=5V 4.5V 40 4V 6V 40 30 ID (A) 30 ID(A) 3.5V 125°C 20 20 10 10 25°C VGS=3V 0 0 0 1 2 3 4 0 5 20 2 3 4 5 6 1.6 Normalized On-Resistance VGS=4.5V 18 16 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 14 12 10 VGS=10V 8 VGS=10V ID=6A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 6 0 3 0 6 9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 25 1.0E+01 ID=6A 1.0E+00 1.0E-01 125°C IS (A) RDS(ON) (mΩ Ω) 20 15 125°C 1.0E-02 1.0E-03 10 25°C 25°C 1.0E-04 1.0E-05 5 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: Aug 2012 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON7810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=15V ID=6A 8 Ciss Capacitance (pF) VGS (Volts) 600 6 4 400 Coss 200 2 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 10µs RDS(ON) limited 30 TJ(Max)=150°C TC=25°C 100µs 1ms 10ms DC 1.0 0.1 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10µs Power (W) 10.0 5 150 100.0 ID (Amps) Crss 0 100 50 TJ(Max)=150°C TC=25°C 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=6°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: Aug 2012 www.aosmd.com Page 4 of 6 AON7810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25 8 Current rating ID(A) Power Dissipation (W) 30 20 15 10 6 4 2 5 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: Aug 2012 www.aosmd.com Page 5 of 6 AON7810 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev0: Aug 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6