PNP BD684 – BD684A SILICON DARLINGTON POWER TRANSISTORS The BD684 and BD684A are PNP eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. NPN complements are BD683 and BD683A. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCBO VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage IC Collector Current IBM PT TJ TStg Base current peak value Total power Dissipation Junction Temperature Storage Temperature IC ICM @ Tmb = 25°C Value Unit -120 -120 -5 -4 -6 -0.1 40 150 -65 to +150 V V V A W °C °C Value Unit A THERMAL CHARACTERISTICS Symbol Ratings RthJ-mb Thermal Resistance, Junction to mouting base 3.12 K/W RthJ-a Thermal Resistance, Junction to ambient in free air 100 K/W 23/10/2012 COMSET SEMICONDUCTORS 1|3 PNP BD684 – BD684A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICEO IEBO VCE(SAT) Ratings Test Condition(s) IE=0, VCB= -120 V IE=0, VCB= -120V, Tj= 150°C Collector cut-off current IB=0,VCE= -1/2VCEOMAX Emitter cut-offcurrent IC=0, VEB=-5 V IC=-1.5 A BD683 Collector-Emitter saturation IB=-30 mA Voltage (*) IC=-2 A, IB=-40 mA BD683A Collector cut-off current hFE DC Current Gain (*) VBE Base-Emitter Voltage (*) hfe fhfe VF Small signal current gain Ut-off frequency Diode forward voltage Second-breakdown collector current Turn-on time Turn-off time I(SB) VCE=-3 V, IC=-1.5 A BD683 VCE=-3 V, IC=-2 A BD683A VCE=-3 V, IC=-1.5 A BD683 VCE=-3 V, IC=-2 A BD683A VCE=-3 V, IC=-1.5 A, f= 1 MHz VCE=-3 V, IC=-1.5 A IF=-1,5 A VCE=-50 V, tP= 20ms, non rep. without heatsink Icon= -1.5A, Ibon= -Iboff= -6mA VCC=-30V ton toff (*) Measured under pulse conditions :tP <300µs, δ <2%. 23/10/2012 COMSET SEMICONDUCTORS Min Typ Max - - -0,2 -2 -0,5 -5 - - -2,5 Unit mA mA mA V - - -2,8 750 - - - - - -2,5 V 10 - 60 -1,5 - kHz V -0,8 - - A - 0,8 4,5 2 8 µs 2|3 PNP BD684 – BD684A MECHANICAL DATA CASE TO-126 DIMENSIONS min max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.25 typ. 0.49 0.75 4.4 typ. 15.7 typ. 1.27 typ. 3.75 typ. 3.0 3.2 2.54 typ. A B C D E F G L M N P S Pin 1 : Pin 2 : Pin 3 : Emitter Collector Base Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 23/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3