DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BC857BS PNP general purpose double transistor Product specification Supersedes data of 1997 Jul 09 1999 Apr 26 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES BC857BS PINNING • Low collector capacitance PIN • Low collector-emitter saturation voltage 1, 4 emitter TR1; TR2 • Closely matched current gain 2, 5 base TR1; TR2 • Reduces number of components and boardspace 6, 3 collector TR1; TR2 DESCRIPTION • No mutual interference between the transistors. APPLICATIONS • General purpose switching and amplification. handbook, halfpage 6 6 5 5 4 4 TR2 DESCRIPTION TR1 PNP double transistor in an SC-88; SOT363 plastic package. NPN complement: BC847BS. 1 2 Top view 3 1 2 3 MAM339 MARKING TYPE NUMBER Fig.1 MARKING CODE BC857BS Simplified outline (SC-88; SOT363) and symbol. 3Ft LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter − −50 VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current Ptot total power dissipation Tstg V − −200 mA − 200 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 1999 Apr 26 2 Philips Semiconductors Product specification PNP general purpose double transistor BC857BS THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT 416 K/W Per device Rth j-a thermal resistance from junction to ambient note 1 Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −30 V − − −15 nA IE = 0; VCB = −30 V; Tj = 150 °C − − −5 µA nA Per transistor ICBO collector cut-off current IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 hFE DC current gain IC = −2 mA; VCE = −5 V 200 − 450 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −100 mV IC = −100 mA; IB = −5 mA; note 1 − − −400 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −755 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V −600 −655 −750 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 2.2 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 26 3 Philips Semiconductors Product specification PNP general purpose double transistor BC857BS MBH727 400 handbook, full pagewidth hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 Fig.2 DC current gain; typical values 1999 Apr 26 4 −102 IC (mA) −103 Philips Semiconductors Product specification PNP general purpose double transistor BC857BS PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 1999 Apr 26 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP general purpose double transistor BC857BS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 26 6 Philips Semiconductors Product specification PNP general purpose double transistor NOTES 1999 Apr 26 7 BC857BS Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 Apr 26 Document order number: 9397 750 05804