ALSC AS7C3364PFD36B-200TQI 3.3v 64k x 32/36 pipeline burst synchronous sram Datasheet

February 2005
AS7C3364PFD32B
AS7C3364PFD36B
®
3.3V 64K X 32/36 pipeline burst synchronous SRAM
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Organization: 65,536 words × 32 or 36 bits
Fast clock speeds to 200 MHz
Fast clock to data access: 3.0/3.5/4.0 ns
Fast OE access time: 3.0/3.5/4.0 ns
Fully synchronous register-to-register operation
Double-cycle deselect
Asynchronous output enable control
Available in 100-pin TQFP package
Linear or interleaved burst control
Individual byte write and global write
Snooze mode for reduced power-standby
Common data inputs and data outputs
Multiple chip enables for easy expansion
3.3V core power supply
2.5V or 3.3V I/O operation with separate VDDQ
Logic block diagram
LBO
CLK
ADV
ADSC
ADSP
CLK
CE
CLR
16
A[15:0]
D
CE Address
register
CLK
GWE
BWE
BWd
14
64K × 32/36
Memory
array
16
36/32
D
DQd Q
Byte write
registers
CLK
36/32
D
DQc Q
Byte write
registers
CLK
BWc
D
DQb Q
Byte write
registers
CLK
BWb
D
DQa Q
Byte write
registers
CLK
BWa
CE0
CE1
CE2
ZZ
Q0
Burst logic
Q1
16
Q
D
4
OE
Output
registers
CLK
Q
Enable
CE register
CLK
Input
registers
CLK
D Enable Q
delay
register
CLK
Power
down
36/32
DQ [a:d]
OE
Selection guide
–200
–166
–133
Units
5
6
7.5
ns
Maximum clock frequency
200
166
133
MHz
Maximum clock access time
3.0
3.5
4
ns
Maximum operating current
375
350
325
mA
Maximum standby current
130
100
90
mA
Maximum CMOS standby current (DC)
30
30
30
mA
Minimum cycle time
1/31/05; v.1.1
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Copyright © Alliance Semiconductor. All rights reserved.
AS7C3364PFD32B
AS7C3364PFD36B
®
2 Mb Synchronous SRAM products list1,2
Org
128KX18
Part Number
AS7C33128PFS18B
Mode
PL-SCD
Speed
200/166/133 MHz
64KX32
64KX36
128KX18
64KX32
64KX36
128KX18
64KX32
64KX36
AS7C3364PFS32B
AS7C3364PFS36B
AS7C33128PFD18B
AS7C3364PFD32B
AS7C3364PFD36B
AS7C33128FT18B
AS7C3364FT32B
AS7C3364FT36B
PL-SCD
PL-SCD
PL-DCD
PL-DCD
PL-DCD
FT
FT
FT
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
200/166/133 MHz
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
6.5/7.5/8.0/10 ns
1 Core Power Supply: VDD = 3.3V + 0.165V
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O
VDDQ = 2.5V + 0.125V for 2.5V I/O
PL-SCD
PL-DCD
FT
:
:
:
1/31/05; v.1.1
Pipelined Burst Synchronous SRAM - Single Cycle Deselect
Pipelined Burst Synchronous SRAM - Double Cycle Deselect
Flow-through Burst Synchronous SRAM
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AS7C3364PFD32B
AS7C3364PFD36B
®
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
TQFP 14 × 20 mm
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb/NC
DQb7
DQb6
VDDQ
VSSQ
DQb5
DQb4
DQb3
DQb2
VSSQ
VDDQ
DQb1
DQb0
VSS
NC
VDD
ZZ
DQa7
DQa6
VDDQ
VSSQ
DQa5
DQa4
DQa3
DQa2
VSSQ
VDDQ
DQa1
DQa0
DQPa/NC
LBO
A
A
A
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
NC
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQPc/NC
DQc0
DQc1
VDDQ
VSSQ
DQc2
DQc3
DQc4
DQc5
VSSQ
VDDQ
DQc6
DQc7
NC
VDD
NC
VSS
DQd0
DQd1
VDDQ
VSSQ
DQd2
DQd3
DQd4
DQd5
VSSQ
VDDQ
DQd6
DQd7
DQPd/NC
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE0
CE1
BWd
BWc
BWb
BWa
CE2
VDD
VSS
CLK
GWE
BWE
OE
ADSC
ADSP
ADV
A
A
Pin arrangement
Note: Pins 1,30,51,80 are NC for X32
1/31/05; v.1.1
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AS7C3364PFD32B
AS7C3364PFD36B
®
Functional description
The AS7C3364PFD32B and AS7C3364PFD36B are high-performance CMOS 2-Mbit synchronous Static Random Access
Memory (SRAM) devices organized as 65,536 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for
highest frequency on any given technology.
Timing for these devices is compatible with existing Pentium® synchronous cache specifications. This architecture is suited
for ASIC, DSP and PowerPC™1-based systems in computing, datacom, instrumentation, and telecommunications systems.
Fast cycle times of 5.0/6.0/7.5 ns with clock access times (tCD) of 3.0/3.5/4.0 ns enable 200, 166 and 133 MHz bus
frequencies. Three chip enable (CE) inputs permit easy memory expansion. Burst operation is initiated in one of two ways: the
controller address strobe (ADSC), or the processor address strobe (ADSP). The burst advance pin (ADV) allows subsequent
internally generated burst addresses.
Read cycles are initiated with ADSP (regardless of WE and ADSC) using the new external address clocked into the on-chip
address register when ADSP is sampled Low, the chip enables are sampled active, and the output buffer is enabled with OE. In
a read operation the data accessed by the current address, registered in the address registers by the positive edge of CLK, are
carried to the data-out registers and driven on the output pins on the next positive edge of CLK. ADV is ignored on the clock
edge that samples ADSP asserted, but is sampled on all subsequent clock edges. Address is incremented internally for the next
access of the burst when ADV is sampled Low, and both address strobes are High. Burst mode is selectable with the LBO
input. With LBO unconnected or driven High, burst operations use a Pentium® count sequence. With LBO driven LOW, the
device uses a linear count sequence suitable for PowerPC™ and many other applications.
Write cycles are performed by disabling the output buffers with OE and asserting a write command. A global write enable
GWE writes all 32/36 bits regardless of the state of individual BW[a:d] inputs. Alternately, when GWE is High, one or more
bytes may be written by asserting BWE and the appropriate individual byte BWn signal(s).
BWn is ignored on the clock edge that samples ADSP Low, but is sampled on all subsequent clock edges. Output buffers are
disabled when BWn is sampled LOW (regardless of OE). Data is clocked into the data input register when BWn is sampled
Low. Address is incremented internally to the next burst address if BWn and ADV are sampled Low. This device operates in
double-cycle deselect feature during read cycles.
Read or write cycles may also be initiated with ADSC instead of ADSP. The differences between cycles initiated with ADSC
and ADSP are as follows:
• ADSP must be sampled HIGH when ADSC is sampled LOW to initiate a cycle with ADSC.
• WE signals are sampled on the clock edge that samples ADSC LOW (and ADSP High).
• Master chip enable CE0 blocks ADSP, but not ADSC.
AS7C3364PFD32B and AS7C3364PFD36B family operates from a core 3.3V power supply. I/Os use a separate power supply
that can operate at 2.5V or 3.3V. These devices are available in a 100-pin 14 × 20 mm TQFP package.
TQFP capacitance
Parameter
Input capacitance
I/O capacitance
Symbol
Test conditions
Min
Max
Unit
CIN*
CI/O*
VIN = 0V
-
5
pF
VOUT = 0V
-
7
pF
* Guaranteed not tested
TQFP thermal resistance
Description
Thermal resistance
(junction to ambient)1
Thermal resistance
(junction to top of case)1
Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
Symbol
Typical
Units
1–layer
θJA
40
°C/W
4–layer
θJA
22
°C/W
θJC
8
°C/W
1 This parameter is sampled
1 PowerPC™ is a trademark International Business Machines Corporation.
1/31/05; v.1.1
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AS7C3364PFD32B
AS7C3364PFD36B
®
Signal descriptions
Signal
I/O
Properties
CLK
I
CLOCK
A,A0,A1
I
SYNC
Address. Sampled when all chip enables are active and ADSC or ADSP are asserted.
I/O
SYNC
Data. Driven as output when the chip is enabled and OE is active.
CE0
I
SYNC
Master chip enable. Sampled on clock edges when ADSP or ADSC is active. When CE0
is inactive, ADSP is blocked. Refer to the Synchronous Truth Table for more information.
CE1, CE2
I
SYNC
Synchronous chip enables. Active HIGH and active Low, respectively. Sampled on clock
edges when ADSC is active or when CE0 and ADSP are active.
ADSP
I
SYNC
Address strobe processor. Asserted LOW to load a new bus address or to enter standby
mode.
ADSC
I
SYNC
Address strobe controller. Asserted LOW to load a new address or to enter standby mode.
ADV
I
SYNC
Advance. Asserted LOW to continue burst read/write.
GWE
I
SYNC
Global write enable. Asserted LOW to write all 32/36 bits. When High, BWE and
BW[a:d] control write enable.
BWE
I
SYNC
Byte write enable. Asserted LOW with GWE = HIGH to enable effect of BW[a:d] inputs.
BW[a,b,c,d]
I
SYNC
Write enables. Used to control write of individual bytes when GWE = HIGH and BWE =
Low. If any of BW[a:d] is active with GWE = HIGH and BWE = LOW the cycle is a
write cycle. If all BW[a:d] are inactive the cycle is a read cycle.
OE
I
ASYNC
Asynchronous output enable. I/O pins are driven when OE is active and the chip is in read
mode.
LBO
I
STATIC
Selects Burst mode. When tied to VDD or left floating, device follows Interleaved Burst
order. When driven Low, device follows linear Burst order. This signal is internally
pulled High.
ZZ
I
ASYNC
Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
NC
-
-
DQ[a,b,c,d]
Description
Clock. All inputs except OE, ZZ, LBO are synchronous to this clock.
No connect
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of
SNOOZE MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ is
disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE
MODE.
1/31/05; v.1.1
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AS7C3364PFD32B
AS7C3364PFD36B
®
Write enable truth table (per byte)
Function
GWE
BWE
BWa
BWb
BWc
BWd
L
X
X
X
X
X
Write All Bytes
H
L
L
L
L
L
Write Byte a
H
L
L
H
H
H
Write Byte c and d
H
L
H
H
L
L
H
H
X
X
X
X
H
L
H
H
H
H
Read
Key: X = don’t care, L = low, H = high, n = a, b, c, d; BWE, BWn = internal write signal.
Asynchronous Truth Table
Operation
Snooze mode
ZZ
H
L
L
L
L
Read
Write
Deselected
OE
X
L
H
X
X
I/O Status
High-Z
Dout
High-Z
Din, High-Z
High-Z
Notes:
1. X means “Don’t Care”
2. ZZ pin is pulled down internally
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.
4. Snooze mode means power down state of which stand-by current does not depend on cycle times
5. Deselected means power down state of which stand-by current depends on cycle times
Burst sequence table
Interleaved burst address (LBO = 1)
1st Address
nd
Linear burst address (LBO = 0)
A1 A0
A1 A0
A1 A0
A1 A0
00
01
10
11
1st Address
nd
A1 A0
A1 A0
A1 A0
A1 A0
00
01
10
11
2 Address
01
00
11
10
2
Address
01
10
11
00
3rd Address
10
11
00
01
3rd Address
10
11
00
01
11
10
01
10
th
4 Address
1/31/05; v.1.1
11
10
01
00
th
4 Address
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®
Synchronous truth table[4]
CE01
CE1
CE2
ADSP
ADSC
H
L
L
L
L
L
L
L
L
X
X
X
X
H
H
H
H
L
X
H
X
H
X
L
L
X
X
H
H
H
H
X
X
X
X
X
X
X
X
H
X
X
X
X
X
X
X
H
H
L
L
L
L
X
X
X
X
X
X
X
X
L
X
X
X
X
X
L
H
L
H
L
L
H
H
H
H
H
H
X
X
X
X
H
H
X
H
X
L
X
L
X
L
X
X
L
L
H
H
H
H
H
H
H
H
L
H
H
H
H
ADV WRITE[2]
X
X
X
X
X
X
X
X
X
L
L
H
H
L
L
H
H
X
L
L
H
H
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
OE
Address accessed
CLK
Operation
DQ
X
X
X
X
X
L
H
L
H
L
H
L
H
L
H
L
H
X
X
X
X
X
NA
NA
NA
NA
NA
External
External
External
External
Next
Next
Current
Current
Next
Next
Current
Current
External
Next
Next
Current
Current
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
L to H
Deselect
Deselect
Deselect
Deselect
Deselect
Begin read
Begin read
Begin read
Begin read
Continue read
Continue read
Suspend read
Suspend read
Continue read
Continue read
Suspend read
Suspend read
Begin write
Continue write
Continue write
Suspend write
Suspend write
Hi−Z
Hi−Z
Hi−Z
Hi−Z
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
Q
Hi−Z
D3
D
D
D
D
1 X = don’t care, L = low, H = high
2 For WRITE, L means any one or more byte write enable signals (BWa, BWb, BWc or BWd) and BWE are LOW or GWE is LOW. WRITE = HIGH for all
BWx, BWE, GWE HIGH. See "Write enable truth table (per byte)," on page 6 for more information.
3 For write operation following a READ, OE must be high before the input data set up time and held high throughout the input hold time
4 ZZ pin is always Low.
1/31/05; v.1.1
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®
Absolute maximum ratings
Parameter
Symbol
Min
Max
Unit
VDD, VDDQ
–0.5
+4.6
V
Input voltage relative to GND (input pins)
VIN
–0.5
VDD + 0.5
V
Input voltage relative to GND (I/O pins)
VIN
–0.5
VDDQ + 0.5
V
Pd
–
1.8
W
Short circuit output current
IOUT
–
20
mA
Storage temperature
Tstg
–65
+150
o
C
+135
o
C
Power supply voltage relative to GND
Power dissipation
Temperature under bias
Tbias
–65
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
3.135
3.3
3.465
V
Vss
0
0
0
V
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
3.135
3.3
3.465
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Vss
0
0
0
V
Ground supply
Recommended operating conditions at 2.5V I/O
Parameter
Ground supply
1/31/05; v.1.1
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DC electrical characteristics for 3.3V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Input high (logic 1) voltage
VIH
Address and control pins
2*
VDD+0.3
I/O pins
2*
VDDQ+0.3
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.8
I/O pins
-0.5**
0.8
Output high voltage
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
–
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
–
0.4
V
Input leakage
V
V
DC electrical characteristics for 2.5V I/O operation
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current†
|ILI|
VDD = Max, 0V < VIN < VDD
-2
2
µA
Output leakage current
|ILO|
OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
µA
Input high (logic 1) voltage
VIH
Address and control pins
1.7*
VDD+0.3
V
I/O pins
1.7*
VDDQ+0.3
V
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Output high voltage
VOH
IOH = –4 mA, VDDQ = 2.375V
1.7
–
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 2.625V
–
0.7
V
† LBO and ZZ pins have an internal pull-up or pull-down, and input leakage = ±10 µA.
*
VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC
**V
IL min
= -1.5 for pulse width less than 0.2 X tCYC
IDD operating conditions and maximum limits
Parameter
Operating power supply current1
Sym
ICC
ISB
Standby power supply current
Conditions
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax,
IOUT = 0 mA, ZZ < VIL
All VIN ≤ 0.2V or > VDD – 0.2V, Deselected,
f = fMax, ZZ < VIL
-200
-166
-133
Unit
375
350
325
mA
130
100
90
ISB1
Deselected, f = 0, ZZ < 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
30
30
30
ISB2
Deselected, f = fMax, ZZ ≥ VDD – 0.2V,
all VIN ≤ VIL or ≥ VIH
30
30
30
mA
1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.
1/31/05; v.1.1
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Timing characteristics over operating range
–200
Parameter
–166
–133
Notes1
Sym
Min
Max
Min
Max
Min
Max
Unit
Clock frequency
fMax
–
200
–
166
–
133
MHz
Cycle time
tCYC
5
–
6
–
7.5
–
ns
Clock access time
tCD
–
3.0
–
3.5
–
4.0
ns
Output enable LOW to data valid
tOE
–
3.0
–
3.5
–
4.0
ns
Clock HIGH to output Low Z
tLZC
0
–
0
–
0
–
ns
2,3,4
Data output invalid from clock HIGH
tOH
1.5
–
1.5
–
1.5
–
ns
2
Output enable LOW to output Low Z
tLZOE
0
–
0
–
0
–
ns
2,3,4
Output enable HIGH to output High Z
tHZOE
–
3.0
–
3.5
–
4.0
ns
2,3,4
Clock HIGH to output High Z
tHZC
–
3.0
–
3.5
–
4.0
ns
2,3,4
tOHOE
0
–
0
–
0
–
ns
Clock HIGH pulse width
tCH
2.0
–
2.4
–
2.5
–
ns
5
Clock LOW pulse width
tCL
2.3
–
2.4
–
2.5
–
ns
5
Address setup to clock HIGH
tAS
1.4
–
1.5
–
1.5
–
ns
6
Data setup to clock HIGH
tDS
1.4
–
1.5
–
1.5
–
ns
6
Write setup to clock HIGH
tWS
1.4
–
1.5
–
1.5
–
ns
6,7
Chip select setup to clock HIGH
tCSS
1.4
–
1.5
–
1.5
–
ns
6,8
Address hold from clock HIGH
tAH
0.4
–
0.5
–
0.5
–
ns
6
Data hold from clock HIGH
tDH
0.4
–
0.5
–
0.5
–
ns
6
Write hold from clock HIGH
tWH
0.4
–
0.5
–
0.5
–
ns
6,7
Chip select hold from clock HIGH
tCSH
0.4
–
0.5
–
0.5
–
ns
6,8
ADV setup to clock HIGH
tADVS
1.4
–
1.5
–
1.5
–
ns
6
ADSP setup to clock HIGH
tADSPS
1.4
–
1.5
–
1.5
–
ns
6
ADSC setup to clock HIGH
tADSCS
1.4
–
1.5
–
1.5
–
ns
6
ADV hold from clock HIGH
tADVH
0.4
–
0.5
–
0.5
–
ns
6
ADSP hold from clock HIGH
tADSPH
0.4
–
0.5
–
0.5
–
ns
6
ADSC hold from clock HIGH
tADSCH
0.4
–
0.5
–
0.5
–
ns
6
Output enable HIGH to invalid output
1 See “Notes” on page 16.
Snooze Mode Electrical Characteristics
Description
Current during Snooze Mode
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SNOOZE current
ZZ inactive to exit SNOOZE current
1/31/05; v.1.1
Conditions
Symbol
ZZ > VIH
ISB2
tPDS
tPUS
tZZI
tRZZI
Alliance Semiconductor
Min
Max
Units
30
mA
cycle
cycle
cycle
2
2
2
0
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AS7C3364PFD36B
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Key to switching waveforms
Rising input
Falling input
don’t care
Undefined
Timing waveform of read cycle
tCYC
tCL
tCH
CLK
tADSPS
tADSPH
ADSP
tADSCS
tADSCH
ADSC
LOAD NEW ADDRESS
tAH
tAS
A1
Address
A2
tWS
A3
tWH
GWE, BWE
tCSS
tCSH
CE0, CE2
CE1
tADVS
tADVH
ADV
ADV inserts wait states
OE
tOE
tHZOE
tLZOE
Dout
Q(A1)
Read
Q(A1)
Suspend
Read
Q(A1)
Read
Q(A2)
tCD
tHZC
tOH
Q(A2)
Q(A2Ý01)
Q(A2Ý10)
Q(A2Ý11)
Q(A3)
Q(A3Ý01)
Q(A3Ý10)
Burst
Burst
Read
Suspend
Burst
Burst
Burst
Burst
Read
Read
Q(A3)
DSEL*
Read
Read
Read
Read
Read
Q(A 2Ý01) Q(A 2Ý10) Q(A 2Ý10) Q(A 2Ý11)
Q(A 3Ý01) Q(A 3Ý10) Q(A 3Ý11)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low. BW[a:d] is don’t care.
*Outputs are disabled within two clk cycles after DSEL command
1/31/05; v.1.1
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Timing waveform of write cycle
tCYC
tCL
tCH
CLK
tADSPS
tADSPH
ADSP
tADSCS
tADSCH
ADSC
ADSC LOADS NEW ADDRESS
tAS
tAH
A1
Address
A3
A2
tWS
tWH
tADVS
tADVH
tDS
tDH
BWE
BW[a:d]
tCSS
tCSH
CE0, CE2
CE1
ADV SUSPENDS BURST
ADV
OE
Din
D(A1)
Read
Q(A1)
Suspend
Write
D(A1)
D(A2)
Read
Q(A2)
D(A2Ý01)
Suspend
Write
D(A 2)
D(A2Ý01)
D(A2Ý10)
D(A2Ý11)
D(A3)
ADV
ADV
ADV
Suspend
Burst
Burst
Burst
Write
Write
Write
D(A 2Ý01) Write
D(A 2Ý01)
D(A 2Ý10) D(A 2Ý11)
D(A3Ý01)
Write
D(A 3)
D(A3Ý10)
Burst
Write
D(A 3Ý01)
ADV
Burst
Write
D(A 3Ý10)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low.
1/31/05; v.1.1
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Timing waveform of read/write cycle (ADSP Controlled; ADSC High)
tCYC
tCL
tCH
CLK
tADSPH
tADSPS
ADSP
tAH
tAS
A2
A1
Address
A3
tWH
tWS
GWE
CE0, CE2
CE1
tADVH
tADVS
ADV
OE
tDS tDH
Din
D(A2)
tOE
tCD
tLZC
Dout
DSEL
Read
Q(A1)
tHZOE
Q(A1)
Suspend
Read
Q(A1)
tOH
tLZOE
Q(A3)
Read
Q(A2)
Suspend
Write
D(A 2)
Read
Q(A3)
ADV
Burst
Read
Q(A 3Ý01)
Q(A3Ý01)
ADV
Burst
Read
Q(A 3Ý10)
Q(A3Ý10)
Q(A3Ý11)
ADV
Burst
Read
Q(A 3Ý11)
Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low.
1/31/05; v.1.1
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Timing waveform of read/write cycle (ADSC controlled, ADSP = HIGH)
tCYC
tCL
tCH
CLK
tADSCS
tADSCH
ADSC
tAS
A1
ADDRESS
A5
A4
A3
A2
A7
A6
tWS
tAH
A8
A9
tWH
GWE
tCSS
tCSH
CE0,CE2
CE1
ADV
OE
tOE
Q(A1)
Dout
tLZOE
tHZOE
tLZOE
Q(A2)
Q(A3)
Q(A8)
Q(A4)
D(A5)
READ
Q(A1)
1/31/05; v.1.1
READ
Q(A2)
READ
Q(A3)
READ
Q(A4)
Q(A9)
tDH
tDS
Din
tOH
D(A6)
D(A7)
WRITE WRITE WRITE
D(A6) D(A7)
D(A5)
Alliance Semiconductor
READ
Q(A8)
READ
Q(A9)
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Timing waveform of power down cycle
tCH
tCYC
tCL
CLK
tADSPS
tADSPS
ADSP
ADSC
A2
A1
ADDRESS
tWH
tWS
GWE
tCSS
tCSH
CE0,CE2
CE1
ADV
OE
tOE
Din
tLZOE
tHZOE
D(A2)
D(A2(Ý01))
tHZC
Dout
Q(A1)
tPUS
tPDS
ZZ Recovery Cycle
ZZ
Normal Operation Mode
ZZ Setup Cycle
tZZI
tRZZI
Isupply
ISB2
READ SUSPEND
Q(A1) READ
Q(A1)
1/31/05; v.1.1
Sleep
State
Alliance Semiconductor
READ SUSPEND CONQ(A2) WRITE TINUE
D(A2) WRITE
D(A2 Ý01)
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AC test conditions
• Output load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC, see Figure C.
• Input pulse level: GND to 3V. See Figure A.
Thevenin equivalent:
• Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A.
+3.3V for 3.3V I/O;
/+2.5V for 2.5V I/O
• Input and output timing reference levels: 1.5V.
+3.0V
90%
10%
GND
90%
10%
Figure A: Input waveform
DOUT
Z0 = 50Ω
50Ω
DOUT
VL = 1.5V
for 3.3V I/O; 353Ω / 1538Ω
30 pF* = V
DDQ/2
for 2.5V I/O
Figure B: Output load (A)
319Ω / 1667Ω
5 pF*
GND *including scope
and jig capacitance
Figure C: Output load (B)
Notes
1 For test conditions, see AC Test Conditions, Figures A, B, C.
2 This parameter measured with output load condition in Figure C.
3 This parameter is sampled, but not 100% tested.
4 tHZOE is less than tLZOE; and tHZC is less than tLZC at any given temperature and voltage.
5 tCH measured as HIGH above VIH and tCL measured as LOW below VIL.
6 This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must
meet the setup and hold times for all rising edges of CLK when chip is enabled.
7 Write refers to GWE, BWE, BW[a:d].
8 Chip select refers to CE0, CE1, CE2.
1/31/05; v.1.1
Alliance Semiconductor
P. 16 of 19
AS7C3364PFD32B
AS7C3364PFD36B
®
Package Dimensions
100-pin quad flat pack (TQFP)
TQFP
c
Min
Max
A1
0.05
0.15
A2
1.35
1.45
b
0.22
0.38
Hd
c
0.09
0.20
D
D
13.90
14.10
E
19.90
20.10
e
15.85
16.15
He
21.80
22.20
L
0.45
0.75
α
A1 A2
b
0.65 nominal
Hd
L1
L1
L
1.00 nominal
0°
7°
e
He E
Dimensions in millimeters
α
1/31/05; v.1.1
Alliance Semiconductor
P. 17 of 19
AS7C3364PFD32B
AS7C3364PFD36B
®
Ordering information
Package
Width
–200
–166
–133
TQFP
x32
AS7C3364PFD32B-200TQC
AS7C3364PFD32B-166TQC
AS7C3364PFD32B-133TQC
TQFP
x32
AS7C3364PFD32B-200TQI
AS7C3364PFD32B-166TQI
AS7C3364PFD32B-133TQI
TQFP
x36
AS7C3364PFD36B-200TQC
AS7C3364PFD36B-166TQC
AS7C3364PFD36B-133TQC
TQFP
x36
AS7C3364PFD36B-200TQI
AS7C3364PFD36B-166TQI
AS7C3364PFD36B-133TQI
Note
Add suffix ‘N’ to the above part number for lead free parts (Ex AS7C3364PFD32B-166TQCN)
Part numbering guide
AS7C
33
64
PF
D
32/36
B
–XXX
TQ
C/I
X
1
2
3
4
5
6
7
8
9
10
11
1. Alliance Semiconductor SRAM prefix
2. Operating voltage: 33 = 3.3V
3. Organization: 64 = 64K
4. Pipeline mode
5. Deselect: D = Double cycle deselect
6. Organization: 32 = x32; 36 = x36
7. Production version: B = Product revision
8. Clock speed (MHz)
9. Package type: TQ = TQFP
10. Operating temperature: C=Commercial (0° C to 70° C); I=Industrial (-40° C to 85° C)
11. N=Lead Free Part
1/31/05; v.1.1
Alliance Semiconductor
P. 18 of 19
®
AS7C3364PFD32B
AS7C3364PFD36B
®
Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Tel: 408 - 855 - 4900
Fax: 408 - 855 - 4999
Copyright © Alliance Semiconductor
All Rights Reserved
Part Number: AS7C3364PFD32B-36B
Document Version: v.1.1
www.alsc.com
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered
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The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at
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