ON DTC115EET1G Bias resistor transistor npn silicon surface mount transistor with monolithic bias resistor network Datasheet

DTC114EET1 Series,
SDTC114EET1 Series
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC−75/SOT−416 package which is designed for low power surface
mount applications.
Features
•
•
•
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 Package Can be Soldered Using Wave or
Reflow
The Modified Gull−Winged Leads Absorb Thermal Stress During
Soldering Eliminating the Possibility of Damage to the Die
Pb−Free Packages are Available
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
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NPN SILICON
BIAS RESISTOR TRANSISTORS
PIN 1
BASE
(INPUT)
Rating
Symbol
Value
Unit
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Value
Unit
200
1.6
mW
mW/°C
600
°C/W
300
2.4
mW
mW/°C
RqJA
400
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current
Total Device Dissipation,
FR−4 Board (Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage Temperature
Range
PD
RqJA
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 12
1
R2
3
1
2
SC−75 (SOT−416)
CASE 463
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Rating
R1
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Collector-Base Voltage
PIN 3
COLLECTOR
(OUTPUT)
xx M G
G
xx
= Specific Device Code
xx = (Refer to page 2)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
Publication Order Number:
DTC114EET1/D
DTC114EET1 Series, SDTC114EET1 Series
ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES
Device
Marking
R1 (K)
DTC114EET1
DTC114EET1G
8A
10
10
SDTC114EET1G
DTC124EET1
DTC124EET1G
8B
22
22
8C
47
47
SDTC124EET1G
DTC144EET1
DTC144EET1G
DTC114YET1
DTC114YET1G
8D
10
47
94
10
∞
8F
4.7
∞
8H
2.2
2.2
8J
4.7
4.7
8K
4.7
47
8L
22
47
8M
2.2
47
8N
100
100
8P
47
22
SDTC114YET1G
DTC114TET1
DTC114TET1G
DTC143TET1
DTC143TET1G
DTC123EET1
DTC123EET1G
DTC143EET1
DTC143EET1G
DTC143ZET1
DTC143ZET1G
DTC124XET1
DTC124XET1G
DTC123JET1
DTC123JET1G
DTC115EET1
DTC115EET1G
DTC144WET1
DTC144WET1G
Package
Shipping†
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
(Pb−Free)
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
SC−75/SOT−416
3000 Tape & Reel
R2 (K)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
DTC114EET1 Series, SDTC114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
350
350
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
Characteristic
OFF CHARACTERISTICS
DTC114EET1, SDTC114EET1
DTC124EET1, SDTC124EET1
DTC144EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTC114EET1, SDTC114EET1
DTC124EET1, SDTC124EET1
DTC144EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) DTC123EET1
(IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/
DTC143EET1/DTC143ZET1/DTC124XET1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
DTC114EET1, SDTC114EET1
DTC124EET1, SDTC124EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
DTC144EET1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
DTC115EET1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
DTC144WET1
VOL
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
DTC143TET1
DTC143ZET1
DTC114TET1
VOH
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
Vdc
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
−
−
Vdc
DTC114EET1 Series, SDTC114EET1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Input Resistor
SDTC114EET1, SDTC114ET1
DTC124EET1, SDTC124EET1
DTC144EET1
DTC114YET1, SDTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
Resistor Ratio
DTC114EET1/SDTC114EET1/DTC115EET1
DTC124EET1/SDTC124EET1/DTC144EET1
DTC114YET1/SDTC114YET1
DTC143TET1/DTC114TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144WET1D
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
R1/R2
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
RqJA = 600°C/W
50
0
-50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 1. Derating Curve
1.0
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
Figure 2. Normalized Thermal Response
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4
10
100
1000
DTC114EET1 Series, SDTC114EET1 Series
1
1000
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1, SDTC114EET1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4
100
IC, COLLECTOR CURRENT (mA)
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
1
0.1
0.01
0.001
50
TA=-25°C
10
VO = 5 V
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
10
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
9
Figure 6. Output Current versus Input Voltage
Figure 5. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob, CAPACITANCE (pF)
3
0
25°C
75°C
f = 1 MHz
TA = 25°C
0
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 7. Input Voltage versus Output Current
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5
50
10
DTC114EET1 Series, SDTC114EET1 Series
100
1
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC123EET1
75°C
0.1
−25°C
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
VCE = 10 V
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
100
4
f = 1 MHz
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
10
25°C
1
TA = −25°C
0.1
0.01
0.001
50
Figure 10. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
9
10
Figure 11. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 9. DC Current Gain
4.5
0
25°C
75°C
10
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage versus Output Current
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6
50
DTC114EET1 Series, SDTC114EET1 Series
1000
1
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EET1, SDTC124EET1
IC/IB = 10
25°C
TA=-25°C
0.1
75°C
0.01
VCE = 10 V
TA=75°C
25°C
-25°C
100
10
0.001
0
20
IC, COLLECTOR CURRENT (mA)
40
50
1
IC, COLLECTOR CURRENT (mA)
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
4
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
TA = 25°C
3
2
1
75°C
25°C
TA=-25°C
10
1
0.1
0.01
VO = 5 V
0
0
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 15. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 16. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 17. Input Voltage versus Output
Current
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7
50
DTC114EET1 Series, SDTC114EET1 Series
10
1000
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EET1
1
25°C
TA=-25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10
50
40
VCE = 10 V
1
10
IC, COLLECTOR CURRENT (mA)
Figure 18. VCE(sat) versus IC
Figure 19. DC Current Gain
1
100
f = 1 MHz
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0.4
TA=-25°C
10
1
0.1
0.01
0.2
0
25°C
75°C
0.6
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
VO = 5 V
0.001
50
0
Figure 20. Output Capacitance
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
10
25°C
75°C
1
0.1
0
10
8
10
Figure 21. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 22. Input Voltage versus Output Current
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8
50
DTC114EET1 Series, SDTC114EET1 Series
1
300
IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YET1, SDTC114YET1
TA=-25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
200
-25°C
150
100
50
0
80
TA=75°C
VCE = 10
250
1
2
4
6
Figure 23. VCE(sat) versus IC
100
f = 1 MHz
TA = 25°C
TA=75°C
IC, COLLECTOR CURRENT (mA)
3.5
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35
VR, REVERSE BIAS VOLTAGE (VOLTS)
40
45
25°C
-25°C
10
VO = 5 V
1
50
Figure 25. Output Capacitance
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=-25°C
25°C
75°C
1
0.1
0
10
8
Figure 26. Output Current versus Input Voltage
10
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
90 100
Figure 24. DC Current Gain
4
0
8 10 15 20 40 50 60 70 80
IC, COLLECTOR CURRENT (mA)
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 27. Input Voltage versus Output Current
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9
50
10
DTC114EET1 Series, SDTC114EET1 Series
1000
1
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC123JET1G
75°C
0.1
−25°C
25°C
0.01
0.001
30
10
20
40
IC, COLLECTOR CURRENT (mA)
0
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. VCE(sat) versus IC
f = 1 MHz
TA = 25°C
3
2.5
2
1.5
1
0.5
0
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
75°C
1
TA = −25°C
0.1
0.01
0.001
50
25°C
VO = 5 V
0
Figure 30. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
75°C
1
25°C
TA = −25°C
VO = 0.2 V
0.1
0
9
10
Figure 31. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
100
3.5
100
Figure 29. DC Current Gain
4.5
4
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 32. Input Voltage versus Output Current
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10
50
DTC114EET1 Series, SDTC114EET1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − DTC143ZET1
1
VCE = 10 V
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1
150°C
−55°C
150°C
0.1
−55°C
TA = 25°C
TA = 25°C
0.01
1
10
0.01
100
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 33. VCE(sat) versus IC
Figure 34. DC Current Gain
4
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
TA = 25°C
3
2
1
150°C
10
−55°C
1
0.1
TA = 25°C
0.01
VO = 5 V
0.001
0
0
5
10
15
20
25
30
35
40
45
0
50
1
2
Figure 36. Output Current versus Input Voltage
Figure 35. Output Capacitance
10
150°C
1
−55°C
TA = 25°C
VO = 0.2 V
0.1
0
10
3
Vin, INPUT VOLTAGE (V)
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
100
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 37. Input Voltage versus Output Current
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11
4
DTC114EET1 Series, SDTC114EET1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 38. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 39. Open Collector Inverter:
Inverts the Input Signal
Figure 40. Inexpensive, Unregulated Current Source
http://onsemi.com
12
DTC114EET1 Series, SDTC114EET1 Series
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
−E−
2
3
b 3 PL
0.20 (0.008)
e
−D−
DIM
A
A1
b
C
D
E
e
L
HE
1
M
D
HE
C
0.20 (0.008) E
INCHES
NOM MAX
0.031 0.035
0.002 0.004
0.008 0.012
0.006 0.010
0.063 0.067
0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
MIN
0.027
0.000
0.006
0.004
0.059
0.027
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
L
MILLIMETERS
MIN
NOM MAX
0.70
0.80
0.90
0.00
0.05
0.10
0.15
0.20
0.30
0.10
0.15
0.25
1.55
1.60
1.65
0.70
0.80
0.90
1.00 BSC
0.10
0.15
0.20
1.50
1.60
1.70
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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DTC114EET1/D
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