Comset BC109 Low noise general purpose audio amplifier Datasheet

NPN BC107 – BC108 – BC109
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18
metal package.
They are suitable for use in drive audio stages, low-noise input audio stages and as low power,
high gain general purpose transistors.
The complementary PNP are BC177, BC178 and BC179.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
VCBO
VEBO
IC
ICM
PD
TJ
TStg
Collector-Emitter Voltage (IB =0)
Collector-Base Voltage (IE =0)
Emitter-Base Voltage (IC =0)
Collector Current
Collector Peak Current
Total Power Dissipation
@ Tamb = 25°
Junction Temperature
Storage Temperature range
BC107
BC108
BC109
Unit
45
50
6
20
30
5
100
200
300
175
-65 to +150
20
30
5
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
Ratings
Test Condition(s)
VCB = 20 V
IE = 0
ICBO
Collector Cutoff Current
VCB = 20 V
IE = 0 V
Tj = 150°C
IEBO
Emitter Cutoff Current
VEB = 5 V
IC = 0
VCEO
Collector-Emitter
Breakdown Voltage
IC = 10 mA
IB = 0
VCBO
Collector-Base
Breakdown Voltage
IC = 10 µA
VBE = 0
VEBO
Emitter-Base Breakdown IE = 10 µA
IC = 0
Voltage
25/09/2012
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
15
nA
-
-
15
µA
-
-
50
nA
45
20
20
50
30
30
-
-
5
-
-
V
V
V
1/3
NPN BC107 – BC108 – BC109
Symbol
VCE(SAT)
VBE(SAT)
Ratings
Collector-Emitter
saturation Voltage
Base-Emitter Saturation
Voltage
Test Condition(s)
IC = 10 mA
IB = 0.5 mA
IC = 100 mA
IB = 5 mA
IC = 10 mA
IB = 0.5 mA
IC = 100 mA
IB = 5 mA
IC = 2 mA
VCE = 5 V
VBE
Base-Emitter Voltage
IC = 10 mA
VCE = 5
IC= 10 µA
VCE= 5 V
hFE
DC Current Gain (*)
IC= 2 mA
VCE= 5 V
fT
F
CC
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
BC107
BC108
BC109
BC107A
BC108A
BC109A
BC107B
BC108B
BC109B
BC107C
BC108C
BC109C
BC107A
BC108A
BC109A
BC107B
BC108B
BC109B
BC107C
BC108C
BC109C
BC107
BC108
BC109
Min
Typ
Max
-
0.09
0.25
V
-
0.2
0.6
-
0.70
V
-
0.55
0.9
0.65
-
0.7
V
-
-
0.77
-
90
-
40
150
-
100
270
-
110
-
220
200
-
450
420
-
800
100
-
-
Transition frequency
IC =10 mA, VCE
=5V
f = 100 MHz
-
-
10
Noise figure
IC = 200 µA VCE BC107
=5V
BC108
f = 1kHz
Rg= 2kΩ
B = 200Hz
BC109
-
-
10
-
-
4
BC177
BC178
BC179
-
4
6
Collector capacitance
25/09/2012
IE = 0
VCB = 10 V
f = 1MHz
COMSET SEMICONDUCTORS
Unit
MHz
db
pF
2/3
NPN BC107 – BC108 – BC109
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-c
Ratings
Thermal Resistance, Junction to mounting base
Thermal Resistance, Junction to ambient in free air
Value
Unit
500
200
°C/W
°C/W
MECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min
A
B
C
D
E
F
G
H
I
L
max
12.7
0.9
2.54
45°
Pin 1 :
Pin 2 :
Pin 3 :
Case :
0.49
5.3
4.9
5.8
1.2
1.16
-
emitter
base
Collector
Collector
August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
25/09/2012
[email protected]
COMSET SEMICONDUCTORS
3/3
Similar pages