NPN BC107 – BC108 – BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC ICM PD TJ TStg Collector-Emitter Voltage (IB =0) Collector-Base Voltage (IE =0) Emitter-Base Voltage (IC =0) Collector Current Collector Peak Current Total Power Dissipation @ Tamb = 25° Junction Temperature Storage Temperature range BC107 BC108 BC109 Unit 45 50 6 20 30 5 100 200 300 175 -65 to +150 20 30 5 V V V mA mA mW °C °C ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol Ratings Test Condition(s) VCB = 20 V IE = 0 ICBO Collector Cutoff Current VCB = 20 V IE = 0 V Tj = 150°C IEBO Emitter Cutoff Current VEB = 5 V IC = 0 VCEO Collector-Emitter Breakdown Voltage IC = 10 mA IB = 0 VCBO Collector-Base Breakdown Voltage IC = 10 µA VBE = 0 VEBO Emitter-Base Breakdown IE = 10 µA IC = 0 Voltage 25/09/2012 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 COMSET SEMICONDUCTORS Min Typ Max Unit - - 15 nA - - 15 µA - - 50 nA 45 20 20 50 30 30 - - 5 - - V V V 1/3 NPN BC107 – BC108 – BC109 Symbol VCE(SAT) VBE(SAT) Ratings Collector-Emitter saturation Voltage Base-Emitter Saturation Voltage Test Condition(s) IC = 10 mA IB = 0.5 mA IC = 100 mA IB = 5 mA IC = 10 mA IB = 0.5 mA IC = 100 mA IB = 5 mA IC = 2 mA VCE = 5 V VBE Base-Emitter Voltage IC = 10 mA VCE = 5 IC= 10 µA VCE= 5 V hFE DC Current Gain (*) IC= 2 mA VCE= 5 V fT F CC BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107 BC108 BC109 BC107A BC108A BC109A BC107B BC108B BC109B BC107C BC108C BC109C BC107A BC108A BC109A BC107B BC108B BC109B BC107C BC108C BC109C BC107 BC108 BC109 Min Typ Max - 0.09 0.25 V - 0.2 0.6 - 0.70 V - 0.55 0.9 0.65 - 0.7 V - - 0.77 - 90 - 40 150 - 100 270 - 110 - 220 200 - 450 420 - 800 100 - - Transition frequency IC =10 mA, VCE =5V f = 100 MHz - - 10 Noise figure IC = 200 µA VCE BC107 =5V BC108 f = 1kHz Rg= 2kΩ B = 200Hz BC109 - - 10 - - 4 BC177 BC178 BC179 - 4 6 Collector capacitance 25/09/2012 IE = 0 VCB = 10 V f = 1MHz COMSET SEMICONDUCTORS Unit MHz db pF 2/3 NPN BC107 – BC108 – BC109 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to mounting base Thermal Resistance, Junction to ambient in free air Value Unit 500 200 °C/W °C/W MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 25/09/2012 [email protected] COMSET SEMICONDUCTORS 3/3