Vishay BAS16WS-V-GS08 Small signal fast switching diode Datasheet

BAS16WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon epitaxial planar diode
• Fast switching diode
e3
• Also available in case SOT23 with
designation BAS16
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD323 plastic case
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS16WS-V
Ordering code
Marking
Remarks
BAS16WS-V-GS18 or BAS16WS-V-GS08
A6
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
VR
75
V
VRM
100
V
IF
250
mA
t = 1 µs
IFSM
2.0
A
t = 1 ms
IFSM
1.0
A
t=1s
IFSM
0.5
A
Ptot
200
mW
Symbol
Value
Unit
RthJA
650
K/W
Reverse voltage
Peak reverse voltage
Forward current (continuous)
Non-repetitive peak forward
current
Power dissipation
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature
Document Number 85752
Rev. 1.7, 30-Apr-08
Tj
150
°C
Tstg
- 65 to + 150
°C
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BAS16WS-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Symbol
Max.
Unit
IF = 1 mA
VF
Min.
Typ.
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1000
mV
IF = 150 mA
VF
1250
mV
VR = 25 V, TJ = 150 °C
IR
30
µA
VR = 75 V
IR
1
µA
VR = 75 V, TJ = 150 °C
IR
50
µA
VR = 0; f = 1 MHz
CD
2
pF
IF = 10 mA to IR = 10 mA,
IR = 1 mA, RL = 100 Ω
trr
6
ns
Leakage current
Diode capacitance
Reverse recovery time
Test condition
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
103
500
400
Tj = 100 °C
102
Ptot (mW)
Tj = 25 °C
IF (mA)
10
1
300
200
100
10- 1
0
10- 2
0
1
2
0
18185
100
VF (V)
18105
Figure 1. Forward Characteristics
104
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Tj = 25 °C
5
Tj = 25 °C
1.1
f = 1 kHz
2
200
Tamb (°C)
f = 1 MHz
103
1.0
CD (VR)
2
102
5
CD (0 V)
Rf (Ω)
5
2
0.9
0.8
10
5
0.7
2
10-2
17438
10-1
1
10
102
IF (mA)
Figure 2. Dynamic Forward Resistance vs. Forward Current
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2
0
2
17440
4
6
8
10
VR (V)
Figure 4. Relative Capacitance vs. Reverse Voltage
For technical support, please contact: [email protected]
Document Number 85752
Rev. 1.7, 30-Apr-08
BAS16WS-V
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
0
17441
100
200
Tj (°C)
Figure 5. Leakage Current vs. Junction Temperature
Package Dimensions in millimeters (inches): SOD323
17443
Document Number 85752
Rev. 1.7, 30-Apr-08
For technical support, please contact: [email protected]
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BAS16WS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
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For technical support, please contact: [email protected]
Document Number 85752
Rev. 1.7, 30-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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