CYStech Electronics Corp. Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 1/4 Silicon PNP Epitaxial Planar Transistor BTB1236AT3 Description • High BVCEO • High current capability • Pb-free package Symbol Outline BTB1236AT3 TO-126 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature BTB1236AT3 Symbol Limits Unit VCBO VCEO VEBO IC ICP IB -180 -160 -5 -1.5 -3 0.5 1 20 150 -55~+150 V V V A A A PD Tj Tstg W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 - Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 - Unit V V V µA µA V V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range BTB1236AT3 K 60~120 P 82~190 Q 120~200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 3/4 Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Saturation Voltage-(mV) Current Gain---HFE VCE=5V 100 10 1 100 10 1 10 100 1000 10000 1 Collector Current---IC(mA) 10000 Power Derating Curve On Voltage vs Collector Current 10000 Power Dissipation---PD(W) 1.2 VBE(ON)@VCE=5V On Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 1 0.8 0.6 0.4 0.2 0 100 1 10 100 1000 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTB1236AT3 CYStek Product Specification Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-126 Dimension D E J I Marking: K A M B α3 B1236A 1 2 3 α4 G C Style: Pin 1.Emitter 2.Collector 3.Base F H L 3-Lead TO-126 Plastic Package CYStek Package Code: T3 α1 α2 *: Typical Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 DIM α1 α2 α3 α4 A B C D E Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1236AT3 CYStek Product Specification