CYSTEKEC BTB1236AT3 Silicon pnp epitaxial planar transistor Datasheet

CYStech Electronics Corp.
Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 1/4
Silicon PNP Epitaxial Planar Transistor
BTB1236AT3
Description
• High BVCEO
• High current capability
• Pb-free package
Symbol
Outline
BTB1236AT3
TO-126
B:Base
C:Collector
E:Emitter
E CB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
Junction Temperature
Storage Temperature
BTB1236AT3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
-180
-160
-5
-1.5
-3
0.5
1
20
150
-55~+150
V
V
V
A
A
A
PD
Tj
Tstg
W
°C
°C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
-180
-160
-5
60
30
-
Typ.
140
27
Max.
-1
-1
-0.6
-1.5
200
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-160V, IE=0
VEB=-4V, IC=0
IC=-1A, IB=-100mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
BTB1236AT3
K
60~120
P
82~190
Q
120~200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=10IB
Saturation Voltage-(mV)
Current Gain---HFE
VCE=5V
100
10
1
100
10
1
10
100
1000
10000
1
Collector Current---IC(mA)
10000
Power Derating Curve
On Voltage vs Collector Current
10000
Power Dissipation---PD(W)
1.2
VBE(ON)@VCE=5V
On Voltage---(mV)
10
100
1000
Collector Current---IC(mA)
1000
1
0.8
0.6
0.4
0.2
0
100
1
10
100
1000
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(W)
25
20
15
10
5
0
0
50
100
150
200
Case Temperature---TC(℃)
BTB1236AT3
CYStek Product Specification
Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-126 Dimension
D
E
J
I
Marking:
K
A
M
B
α3
B1236A
1 2 3
α4
G
C
Style: Pin 1.Emitter 2.Collector 3.Base
F
H
L
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
α1
α2
*: Typical
Inches
Min.
Max.
*3°
*3°
*3°
*3°
0.1500
0.1539
0.2752
0.2791
0.5315
0.6102
0.2854
0.3039
0.0374
0.0413
DIM
α1
α2
α3
α4
A
B
C
D
E
Millimeters
Min.
Max.
*3°
*3°
*3°
*3°
3.81
3.91
6.99
7.09
13.50
15.50
7.52
7.72
0.95
1.05
DIM
F
G
H
I
J
K
L
M
Inches
Min.
Max.
0.0280
0.0319
0.0480
0.0520
0.1709
0.1890
0.0950
0.1050
0.0450
0.0550
0.0450
0.0550
*0.0217
0.1378
0.1520
Millimeters
Min.
Max.
0.71
0.81
1.22
1.32
4.34
4.80
2.41
2.66
1.14
1.39
1.14
1.39
*0.55
3.50
3.86
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1236AT3
CYStek Product Specification
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