PHILIPS BAT120C Schottky barrier double diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT120 series
Schottky barrier double diodes
Product specification
Supersedes data of 1998 Jan 21
1998 Oct 30
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
PINNING
FEATURES
• Low switching losses
BAT120
PIN
• Capability of absorbing very high
surge current
• Fast recovery time
• Guard ring protected
• Plastic SMD package.
A
C
S
1
k1
a1
a1
2
n.c.
n.c.
n.c.
3
k2
a2
k2
4
a1, a2
k1, k2
k1, a2
4
page
1
3
2 n.c.
Fig.2
APPLICATIONS
MGL171
BAT120A diode
configuration (symbol).
• Low power switched-mode power
supplies
• Rectification
4
age
• Polarity protection.
4
page
1
3
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
2 n.c.
Fig.3
1
Top view
MARKING
TYPE NUMBER
2
BAT120C diode
configuration (symbol).
3
MSB002 - 1
MARKING
CODE
4
page
BAT120A
AT120A
BAT120C
AT120C
BAT120S
AT120S
Fig.1
Simplified outline
(SOT223) and pin
configuration.
1
3
2 n.c.
Fig.4
1998 Oct 30
MGL172
2
MGL173
BAT120S diode
configuration (symbol).
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
−
25
V
IF
continuous forward current
−
1
A
IFSM
non-repetitive peak forward current
tp < 10 ms; half sinewave;
JEDEC method
−
10
A
IRSM
non-repetitive peak reverse current
tp = 100 µs
−
0.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Tamb
operating ambient temperature
−65
+125
°C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
IR
Cd
forward voltage
reverse current
diode capacitance
see Fig.5
IF = 100 mA
260
300
mV
IF = 1 A
400
450
mV
VR = 20 V; note 1; see Fig.6
80
500
µA
VR = 25 V; note 1; see Fig.6
−
1
mA
VR = 20 V; Tj = 100 °C; note 1
−
10
mA
f = 1 MHz; VR = 4 V; see Fig.7
100
−
pF
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Refer to SOT223 standard mounting conditions.
1998 Oct 30
3
VALUE
UNIT
100
K/W
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
GRAPHICAL DATA
MBK572
104
handbook, halfpage
MBK573
104
handbook, halfpage
IF
(mA)
IR
(mA)
103
(1)
(2)
103
(3)
(1)
(2)
(3)
(4)
102
102
(4)
10
1
10
0
0.2
0.4
0.6
0.8
1
1.0
0
10
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Fig.5
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
Forward current as a function of forward
voltage; typical values.
Fig.6
MBK571
103
handbook, halfpage
Cd
(pF)
102
10
0
10
20
VR (V)
30
f = 1 MHz; Tamb = 25 °C.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
1998 Oct 30
4
20
VR (V)
30
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Reverse current as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
96-11-11
97-02-28
SOT223
1998 Oct 30
EUROPEAN
PROJECTION
5
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 30
6
Philips Semiconductors
Product specification
Schottky barrier double diodes
BAT120 series
NOTES
1998 Oct 30
7
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© Philips Electronics N.V. 1998
SCA60
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Date of release: 1998 Oct 30
Document order number:
9397 750 04681
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