BDX 66, A, B, C PNP SILICON DARLINGTONS High current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC(RMS) IC Collector Current ICM Value BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -16 A -20 Base Current BDX66 BDX66A BDX66B BDX66C -0.25 A PT Power Dissipation BDX66 BDX66A BDX66B BDX66C 150 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX66 BDX66A BDX66B BDX66C IB @ TC = 25° COMSET SEMICONDUCTORS 1/4 BDX 66, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX66 BDX66A BDX66B BDX66C Value Unit 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Min Typ Mx Unit BDX66 -60 - - BDX66A -80 - V IC=-0.1 A, L=25mH BDX66B -100 - - BDX66C -120 - - VCE=-30 V BDX66 - - VCE=-40 V BDX66A - - Collector Cutoff Current -3 VCE=-50 V BDX66B - - VCE=-60 V BDX66C - - COMSET SEMICONDUCTORS 2/4 mA BDX 66, A, B, C Symbol IEBO Ratings Test Condition(s) Emitter Cutoff Current BDX66 BDX66A BDX66B BDX66C Min Typ Mx Unit - - -5.0 - - -1 TCASE=150°C - - -5 TCASE=25°C, VCB=-50 V - - -1 - - -5 VBE=-5 V TCASE=25°C, VCB=-40 V mA BDX66 BDX66A TCASE=150°C ICBO Collector-Base Cutoff Current mA - - -1 TCASE=150°C - - -5 TCASE=25°C, VCB=-70 V - - -1 - - -5 - - -2 V - 300 - pF - 1 - TCASE=25°C, VCB=-60 V BDX66B BDX66C TCASE=150°C VCE(SAT) Collector-Emitter saturation Voltage (*) C22b IC=-10 A, IB=-40 mA IE=0 A, VCB=-10V, f=1 MHz ton Switching characteristics VCC=12V, IC=-10 A, IB1=IB2=0.04 toff COMSET SEMICONDUCTORS BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C µs - 3.5 - 3/4 BDX 66, A, B, C Symbol Ratings Test Condition(s) fC VCE=-3 V, IC=-5 A, f=1 MHz BDX66 BDX66A BDX66B BDX66C Min Typ Mx Unit - 60 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 4/4 kHz