DS 35 DSA 35 VRRM = 800-1800 V IF(RMS) = 80 A IF(AV)M = 49 A Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 35-08A DS 35-12A DSI 35-08A DSI 35-12A 1300 1700 1900 1300 1750 1950 1200 1600 1800 DSA 35-12A DSA 35-16A DSA 35-18A DSAI 35-12A DSAI 35-16A DSAI 35-18A DO-203 AB C A DS DSA A = Anode Symbol Test Conditions IF(RMS) IF(AVM) TVJ = TVJM Tcase = 100°C; 180° sine 80 49 A A PRSM DSA(I) types, TVJ = TVJM, tp = 10 ms 11 kW IFSM TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 650 690 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 640 A A 2 It C DSI DSAI C = Cathode Maximum Ratings t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2100 2000 As A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1700 A2s A2s -40...+180 180 -40...+180 °C °C °C Mounting torque 4.5-5.5 40-49 15 Weight Nm lb.in. g Symbol Test Conditions IR TVJ = TVJM; VR = VRRM £ 4 VF IF £ 1.55 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 4.5 V mW RthJC RthJH DC current DC current 1.05 1.25 K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 4.05 3.9 100 mm mm m/s2 = 150 A; TVJ = 25°C Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips ● TVJ = 45°C VR = 0 TVJ TVJM Tstg Md A 1/4-28UNF ① Only for Avalanche Diodes 2 DSI 35 DSAI 35 ● Applications High power rectifiers Field supply for DC motors Power supplies ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values mA Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-2 DS 35 DSA 35 1000 250 A 900 A typ. DSI 35 DSAI 35 10000 50Hz, 80% VRRM VR = 0 V 8000 A2s lim. 800 200 IF 6000 I2t 700 IFSM 4000 600 150 TVJ= 180°C TVJ= 25°C TVJ = 45°C 500 400 100 TVJ = 180°C 300 2000 TVJ = 45°C 200 50 TVJ = 180°C 100 0 0.5 1.0 1000 0 10-3 2.0 V 1.5 VF Fig. 1 Forward characteristics 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms 8 910 t Fig. 3 I2t versus time (1-10 ms) Fig. 2 Surge overload current IFSM: crest value, t: duration 60 100 A W RthJA : 80 50 1.5 K/W PF IF(AV)M 1.9 K/W 60 40 2.3 K/W 30 3.9 K/W 40 DC 180° sin 120° 60° 30° 20 20 10 0 0 0 20 40 60 80 A 00 50 IF(AV)M 150 °C 200 100 0 40 80 120 Tamb Fig. 4 Power dissipation versus forward current and ambient temperature 160 °C 200 Tcase Fig. 5 Max. forward current at case temperature 180° sine 2.0 K/W RthJH for various conduction angles d: 1.6 ZthJH 1.2 0.8 d RthJH (K/W) DC 180° 120° 60° 30° 1.25 1.37 1.47 1.74 2.08 Constants for ZthJH calculation: 0.4 0.0 10-3 i 10-2 10-1 100 s 101 t Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 102 1 2 3 4 Rthi (K/W) ti (s) 0.10 0.25 0.70 0.20 0.0012 0.1181 0.6540 2.0 2-2