Seme LAB D2018UK Rohs compliant metal gate rf silicon fet Datasheet

TetraFET
D2018UK
ROHS COMPLIANT METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
MECHANICAL DATA
C
B
A
!
D
( 2 p ls )
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
E
• SUITABLE FOR BROAD BAND
APPLICATIONS
H
G
F
• SIMPLE BIAS CIRCUITS
DP
PIN 1
SOURCE
PIN 3
GATE
DIM
A
B
C
D
E
F
G
H
• LOW Crss
PIN 2
DRAIN
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
mm
16.51
6.35
45°
1.52
6.35
0.13
3.56
0.64
Tol.
0.25
0.13
5°
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.060
0.250
0.005
0.140
0.024
Tol.
0.010
0.005
5°
0.005
0.005
0.001
0.020
0.005
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
42W
65V
±20V
4A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 3039
Issue 1
D2018UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
V
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
0.8
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 0.8A
GPS
Common Source Power Gain
PO = 10W
η
Drain Efficiency
VDS = 28V
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
VSWR Load Mismatch Tolerance
IDQ = 0.4A
f = 1GHz
65
1
0.72
S
10
dB
40
%
20:1
—
Ciss
Input Capacitance
VDS = 0
VGS = –5V f = 1MHz
48
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
24
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
2
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 4.2°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 3039
Issue 1
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