Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 1/7 CYStech Electronics Corp. BVCEO IC VCESAT NPN High Voltage Planar Transistor BTNA45A3 500V 150mA 150mV (max) Description • High breakdown voltage. (BVCEO=500V) • Low collector-emitter saturation voltage VCESAT. • High collector current capability IC and ICM. • High collector current gain HFE at high collector current IC. • Low collector output capacitance. (Typ. 5pF at VCB =20V) • Pb-free lead plating and halogen-free package. Symbol Outline BTNA45A3 TO-92 B：Base C：Collector E：Emitter E BC Ordering Information Device BTNA45A3-0-TB-G BTNA45A3-0-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTNA45A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current, single pulse, pulse width<1ms Peak Base Current, single pulse, pulse width<1ms Power Dissipation Junction Temperature Storage Temperature Symbol Limits VCBO VCES VCEO VEBO IC ICM IBM Pd Tj Tstg 500 500 500 7 150 500 200 625 150 -55~+150 Unit V mA mW °C °C Characteristics (Ta=25°C) Symbol *BVCBO *BVCEO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 *hFE 4 fT Cob ton toff Min. 500 500 500 7 120 120 120 30 50 - Typ. 5 110 1500 Max. 100 100 100 90 150 0.9 0.9 300 8 - Unit V nA mV V MHz pF ns Test Conditions IC=50μA IC=10mA IC=50μA IE=50μA VCB=500V VCE=500V VEB=5V IC=20mA, IB=2mA IC=50mA, IB=6mA IC=50mA, IB=5mA VCE=10V, IC=50mA VCE=10V, IC=1mA VCE=10V, IC=30mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A, f=1MHz VCE=100V, IC=50mA, IB1=5mA, IB 2= -10mA *Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% BTNA45A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.07 0.14 1mA Collector Current---IC(A) Collector Current---IC(A) 5mA 0.12 0.06 500uA 400uA 300uA 0.05 0.04 200uA 0.03 IB=100uA 0.02 0.01 0.1 2.5mA 2mA 1.5mA 0.08 1mA 0.06 IB=500uA 0.04 0.02 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 100 Current Gain---HFE Current Gain---HFE Ta=125°C Ta=125°C Ta= 75°C Ta= 25°C 10 Ta=75°C 100 Ta=25°C VCE=5V VCE=1V 10 1 0.1 1 10 100 Collector Current---IC(mA) 0.1 1000 Current Gain vs Collector Current 1000 1 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current 10000 Ta=125°C Saturation Voltage---(mV) Current Gain---HFE VCESAT=10IB 100 Ta=25°C Ta=75°C 1000 125°C 75°C 25°C 100 VCE=10V 10 10 0.1 BTNA45A3 1 10 100 Collector Current---IC(mA) 1000 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 100000 VBESAT@IC=10IB Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT=20IB 10000 1000 125°C 75°C 25°C 100 Ta=75°C Ta=25°C 1000 125°C 100 10 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) 1000 Capacitance vs Reverse-biased Voltage On Voltage vs Collector Current 1000 10000 Capacitance---(pF) On Voltage---(mV) VBEON@VCE=10V 25°C 75°C 1000 Cib 100 10 Cob 125°C 100 1 1 10 100 Collector Current---IC(mA) 1000 0.1 1 10 Reverse-biased Voltage---VR(V) 100 Power Derating Curve Power Dissipation---PD(mW) 700 600 500 400 300 200 100 0 0 BTNA45A3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 5/7 CYStech Electronics Corp. TO-92 Taping Outline H2 H2A H2A H2 D2 A L H3 H4 H L1 H1 D1 F1F2 T2 T T1 DIM A D D1 D2 F1,F2 F1,F2 H H1 H2 H2A H3 H4 L L1 P P1 P2 T T1 T2 W W1 - BTNA45A3 P1 P Item Component body height Tape Feed Diameter Lead Diameter Component Body Diameter Component Lead Pitch F1-F2 Height Of Seating Plane Feed Hole Location Front To Rear Deflection Deflection Left Or Right Component Height Feed Hole To Bottom Of Component Lead Length After Component Removal Lead Wire Enclosure Feed Hole Pitch Center Of Seating Plane Location 4 Feed Hole Pitch Over All Tape Thickness Total Taped Package Thickness Carrier Tape Thickness Tape Width Adhesive Tape Width 20 pcs Pitch W1 W D P2 Millimeters Min. 4.33 3.80 0.36 4.33 2.40 15.50 8.50 2.50 12.50 5.95 50.30 0.36 17.50 5.00 253 Max. 4.83 4.20 0.53 4.83 2.90 ±0.3 16.50 9.50 1 1 27 21 11 12.90 6.75 51.30 0.55 1.42 0.68 19.00 7.00 255 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTNA45A3 CYStek Product Specification Spec. No. : C241A3 Issued Date : 2011.06.10 Revised Date : 2013.11.22 Page No. : 7/7 CYStech Electronics Corp. TO-92 Dimension α2 A Marking: B 1 2 3 Device Name α3 C Date Code NA45 □□ D H I G α1 E Style: Pin 1.Emitter 2.Base 3.Collector F 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTNA45A3 CYStek Product Specification