BGD902 860 MHz, 18.5 dB gain power doubler amplifier Rev. 08 — 7 June 2007 Product data sheet 1. Product profile 1.1 General description Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. 1.2 Features n n n n n n Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability 1.3 Applications n CATV systems operating in the 40 MHz to 900 MHz frequency range. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 50 MHz 18.2 18.5 18.8 dB 19 19.5 20 dB 405 420 435 mA f = 900 MHz total current consumption (DC) Itot [1] [1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. 2. Pinning information Table 2. Pinning Pin Description 1 input 2, 3 common 5 +VB 7, 8 common 9 output Simplified outline Symbol 5 1 3 5 7 9 1 9 2 3 7 8 sym095 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 3. Ordering information Table 3. Ordering information Type number BGD902 Package Name Description Version - rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VB Vi Conditions Min Max Unit supply voltage - 30 V RF input voltage - 70 dBmV Tstg storage temperature −40 +100 °C Tmb mounting base temperature −20 +100 °C 5. Characteristics Table 5. Characteristics Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 50 MHz 18.2 18.5 18.8 dB f = 900 MHz 19 19.5 20 dB SL slope cable equivalent f = 40 MHz to 900 MHz 0.4 0.9 1.4 dB FL flatness of frequency response f = 40 MHz to 900 MHz - ±0.15 ±0.3 dB s11 input return losses f = 40 MHz to 80 MHz 21 23 - dB f = 80 MHz to 160 MHz 22 24 - dB f = 160 MHz to 320 MHz 21 24 - dB f = 320 MHz to 550 MHz 18 23 - dB f = 550 MHz to 650 MHz 17 23 - dB f = 650 MHz to 750 MHz 16 24 - dB f = 750 MHz to 900 MHz 16 26 - dB s22 output return losses f = 40 MHz to 80 MHz 25 32 - dB f = 80 MHz to 160 MHz 23 31 - dB f = 160 MHz to 320 MHz 20 29 - dB f = 320 MHz to 550 MHz 20 28 - dB f = 550 MHz to 650 MHz 19 31 - dB f = 650 MHz to 750 MHz 18 29 - dB f = 750 MHz to 900 MHz 17 22 - dB BGD902_8 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 2 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier Table 5. Characteristics …continued Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. Symbol Parameter Conditions Min Typ Max Unit s21 phase response f = 50 MHz −45 - +45 deg CTB composite triple beat 49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz - −68.5 −67 dB 77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz - −70 −68 dB 110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz - −63.5 −62 dB - −60 −58 dB - −64 −62 dB 129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz Xmod 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz [1] 129 chs; fm = 650 MHz; Vo = 49.5 dBmV at 860 MHz [2] - −58.5 −56.5 dB cross modulation 49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz - −66.5 −64 dB 77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz - −69.5 −67 dB 110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz - −66 −63.5 dB - −64.5 −62 dB 110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz [1] - −63 −60 dB 129 chs; fm = 860 MHz; Vo = 49.5 dBmV at 860 MHz [2] - −61 −58 dB 49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz - −65 −62 dB 77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz - −72 −67 dB 110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz - −65 −60 dB 129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz CSO composite second order distortion - −61 −58 dB 110 chs; fm = 250 MHz; Vo = 49 dBmV at 550 MHz [1] - −67 −63 dB 129 chs; fm = 250 MHz; Vo = 49.5 dBmV at 860 MHz [2] - −62 −58 dB [3] - −80 −74 dB [4] - −83 −77 dB [5] - −84 −78 dB [6] 64.5 66 - dBmV [7] 65.5 67 - dBmV [8] 67.5 69 - dBmV CTB compression = 1 dB; 129 chs flat; f = 859.25 MHz 48.5 49.5 - dBmV CSO compression = 1 dB; 129 chs flat; f = 860.5 MHz 50 53 - dBmV f = 50 MHz - 4.5 5 dB f = 550 MHz - 5 5.5 dB f = 750 MHz - 5.5 6.5 dB - 6.5 8 dB 405 420 435 mA 129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz IMD2 second order distortion output voltage Vo F noise figure IMD = −60 dB f = 900 MHz [9] total current consumption (DC) Itot [1] Tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). [2] Tilt = 12.5 dB (50 MHz to 860 MHz). [3] fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz. [4] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. [5] fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz. BGD902_8 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 3 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier [6] Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz. [7] Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. [8] Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz. [9] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V. mda980 −50 52 Vo (dBmV) CTB (dB) (2) (3) (4) (1) mda981 −50 Xmod (dB) 52 Vo (dBmV) (1) (2) (3) (4) 48 −60 −70 44 −70 44 −80 40 −80 40 36 1000 800 f (MHz) −90 −60 (2) (3) (4) −90 0 200 400 600 (1) (1) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. 0 200 600 36 1000 800 f (MHz) (1) Vo. (2) Typ. +3 σ. (3) Typ. (3) Typ. (4) Typ. −3 σ. (4) Typ. −3 σ. Fig 1. Composite triple beat as a function of frequency under tilted conditions 400 ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (2) Typ. +3 σ. Fig 2. Cross modulation as a function of frequency under tilted conditions BGD902_8 Product data sheet 48 © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 4 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier mda982 CSO (dB) −50 Vo (dBmV) CTB (dB) 48 −60 44 −70 44 40 −80 40 36 800 1000 f (MHz) −90 (1) (2) −60 mda942 52 −50 (1) Vo (dBmV) (2) (3) (4) (1) 48 (3) (2) (4) −70 52 (3) (4) −80 −90 0 200 400 600 ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz). (1) Vo. 0 200 600 36 800 1000 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (1) Vo. (2) Typ. +3 σ. (2) Typ. +3 σ. (3) Typ. (3) Typ. (4) Typ. −3 σ. (4) Typ. −3 σ. Fig 3. Composite second order distortion as a function of frequency under tilted conditions Fig 4. Composite triple beat as a function of frequency under tilted conditions BGD902_8 Product data sheet 400 © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 5 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier mda943 −50 Xmod (dB) 52 Vo (dBmV) (1) (2) −60 48 (3) (4) mda944 −50 CSO (dB) 52 Vo (dBmV) (1) −60 48 (2) −70 44 (3) −70 44 (4) 40 −80 36 800 1000 f (MHz) −90 −80 −90 0 400 200 600 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). 40 0 200 (1) Vo. (1) Vo. (2) Typ. +3 σ. (3) Typ. (3) Typ. (4) Typ. −3 σ. (4) Typ. −3 σ. mda945 −20 Fig 6. Composite second order distortion as a function of frequency under tilted conditions mda946 −20 CTB (dB) −30 CSO (dB) −30 −40 −40 −50 −50 −60 36 1000 800 f (MHz) 600 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 MHz to 860 MHz). (2) Typ. +3 σ. Fig 5. Cross modulation as a function of frequency under tilted conditions 400 −60 (1) (2) (3) (1) (2) (3) −70 40 45 50 Vo (dBmV) 55 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz. −70 40 50 Vo (dBmV) 55 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz. (1) Typ. +3 σ. (1) Typ. +3 σ. (2) Typ. (2) Typ. (3) Typ. −3 σ. (3) Typ. −3 σ. Fig 7. Composite triple beat as a function of output voltage Fig 8. Composite second order distortion as a function of output voltage BGD902_8 Product data sheet 45 © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 6 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 x M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.1 OUTLINE VERSION b c d D E max. max. max. e e1 F L min. p 4.15 0.51 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 3.85 0.38 Q max. q JEDEC q2 S U1 U2 W w x 2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7 44.25 7.8 UNC REFERENCES IEC q1 JEITA EUROPEAN PROJECTION y Z max. 0.1 3.8 ISSUE DATE 99-02-06 04-02-04 SOT115J Fig 9. Package outline SOT115J BGD902_8 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 7 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 7. Revision history Table 6. Revision history Document ID Release date Data sheet status BGD902_8 20070607 Product data sheet Modifications: Change notice Supersedes BGD902_7 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Table 5 “Characteristics”: updated values of s11 and s22. BGD902_7 20050308 Product data sheet BGD902_902MI_6 BGD902_902MI_6 20011102 Product specification BGD902_902MI_5 BGD902_902MI_5 19990329 Product specification BGD902_N_3 and BGD902MI_N_1 BGD902_N_3 19980709 Preliminary specification BGD902_N_2 BGD902_N_2 19980609 Preliminary specification BGD902_1 BGD902_1 19980312 Preliminary specification - BGD902MI_N_1 19980831 Preliminary specification - BGD902_8 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 8 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 8. Legal information 8.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 8.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 8.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 8.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 9. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BGD902_8 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 08 — 7 June 2007 9 of 10 BGD902 NXP Semiconductors 860 MHz, 18.5 dB gain power doubler amplifier 10. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.2 8.3 8.4 9 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 June 2007 Document identifier: BGD902_8