ABS2 THRU ABS10 Single Phase 0.8 AMP. Glass Passivated Bridge Rectifiers VOLTAGE RANGE Thin Mini-Dip 50 to 1000 Volts CURRENT 0.8 Ampere Features 0.010(0.25) 0.002(0.05) 0.006(0.15) 0~10 O High temperature soldering guaranteed: 0.006(0.15) 0.252(6.4) molded plastic technique 0.236(6.0) 0.177(4.5) Glass passivated junction Ideal for printed circuit board Reliable low cost construction utilizing 0.169(4.3) ABS 0.059(1.5) 260℃ / 10 seconds / 0.375” ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension Small size, simple installation Leads solderable per MIL-STD-202, Method 208 High surge current capability 0.008(0.2) 0.174(4.4) ----- 0.056(1.42) 0.193(4.9) 0.048(1.22) 0.21(5.4) 0.059(1.50) MAX. 0.006(0.15) 0.002(0.05) 0.150(3.8) DETAIL "A", SCALE=20/1 A 0.033(0.85) 0.022(0.55) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ABS2 ABS4 Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current On glass-epoxy P.C.B. On aluminum substrate Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 0.4A Maximum DC Reverse Current @ TA=25℃ at Rated DC Blocking Voltage Typical Thermal resistance Junction to Lead On aluminum substrate On Glass-Epoxy substrate Operating Temperature Range Storage Temperature Range VRRM VRMS VDC 200 140 200 400 280 400 ABS6 ABS8 ABS10 Units 600 420 600 800 560 800 1000 700 1000 V V V I(AV) 0.8 A IFSM 24 A VF 0.95 V IR 5 uA ℃/W TJ 25 62.5 80 -55 to +150 TSTG -55 to +150 RθJL RθJA www.dgnjdz.com m m ℃ ℃ RATINGS AND CHARACTERISTIC CURVES (ABS2 THRU ABS10) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 1.6 100 1.2 INSTANTANEOUS REVERSE CURRENT. ( A) AVERAGE FORWARD CURRENT. (A) 1.4 ALUMINA SUBSTRATE 50.8mm X 50.8mm SOLDERING LAND 1mm X 1mm CONDUCTOR LAYER 20 mm SUBSTRATE THICKNESS 0.64mm SIN 1.0 0.8 0.6 0.4 0.2 0 0 20 40 80 60 120 100 140 10 Tj=100 0C Tj=75 0C 1 0.1 Tj=25 0C 160 O AMBIENT TEMPERATURE. ( C) 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.4- TYPICAL JUNCTION CAPACITANCE 24 1000 20 600 16 IFSM 12 10ms 10ms 1 Cycle Ta=40 C NON-REPETITIVE, Single Half Sine-Wave SINE(JEDEC WAVE, Method) Tj = 25OC BEFORE SURGE CURRENT IS APPLIED 8 4 0 10 NUMBER OF CYCLES (CYCLE) 1 100 JUNCTION CAPACITANCE.(pF) PEAK FORWARD SURGE CURRENT. (A) 28 0.01 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 500 Tj=25 0C 400 300 200 100 0 0.1 FIG.5- TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT. (A) 50 10 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) www.dgnjdz.com 0.5 1 2 10 50 100 5 20 REVERSE VOLTAGE. (V) 200 500 800