Preliminary EIC6775-15 6.70-7.50 GHz 15-Watt Internally Matched Power FET ISSUED 10/08/2008 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • 6.70– 7.50GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.0 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 31% Power Added Efficiency 100% Tested for DC, RF, and RTH Excelics EIC6775-15 0.945 0.024 0.803 0.580 YYWW SN 0.315 0.055 0.685 0.168 0.617 0.010 0.004 0.158 0.095 0.055 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 6.70-7.50GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 6.70-7.50GHz VDS = 10 V, IDSQ ≈ 4500mA Gain Flatness f = 6.70-7.50GHz VDS = 10 V, IDSQ ≈ 4500mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 4500mA f = 6.70-7.50GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage MIN TYP 41.0 42.0 dBm 7.0 8.0 dB UNITS ±0.6 dB 31 f = 6.70-7.50GHz % 4600 5200 mA VDS = 3 V, VGS = 0 V 8500 11000 mA VDS = 3 V, IDS = 85 mA -2.5 -4.0 2 Thermal Resistance RTH MAX 2.0 V o 2.5 C/W Note: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -3V Forward Gate Current 189.9mA 63.3mA PARAMETERS Reserve Gate Current -10.6mA -31.7mA Input Power 41.5dBm @ 3dB Compression Channel Temperature 175 oC 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 60W 60W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 EIC6775-15 6.70-7.50 GHz 15-Watt Internally Matched Power FET ISSUED 10/08/2008 PACKAGES OUTLINE (Hermetic) 2X 0.079 MIN 4X 0.102 Excelics EIC6775-15 0.945 0.024 0.803 0.580 YYWW SN 0.315 0.055 0.685 0.010 0.168 0.617 0.004 0.158 0.055 0.095 Note: Dimensions in inches, Tolerance + .005 unless otherwise specified DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2