INCHANGE Semiconductor isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 45V(Min) ·Complement to type BD136 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous 0.5 A Collector Power Dissipation @ Ta=25℃ 1.25 Collector Power Dissipation @ TC=25℃ 12.5 Junction Temperature 150 ℃ -55~150 ℃ PC TJ Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BD135 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 0.5 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 2V 1.0 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 VCB= 30V; IE= 0,TC=125℃ 0.1 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE-1 DC Current Gain IC= 5mA ; VCE= 2V 25 hFE-2 DC Current Gain IC= 0.5A ; VCE= 2V 25 hFE-3 DC Current Gain IC= 0.15A ; VCE= 2V 40 isc website：www.iscsemi.com CONDITIONS 2 MIN TYP. MAX 45 UNIT V 250 isc & iscsemi is registered trademark