AUTOMOTIVE GRADE
PD - 97740
AUIRLR014N
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Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
HEXFET® Power MOSFET
D
V(BR)DSS
55V
RDS(on) max.
G
S
0.14
ID
10A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
S
G
D-Pak
AUIRLR014N
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
7.1
IDM
Pulsed Drain Current
c
Units
A
40
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
d
28
0.2
± 16
W
W/°C
V
mJ
EAS
Single Pulse Avalanche Energy (Thermally Limited)
35
IAR
Avalanche Current
6.0
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
2.8
5.0
-55 to + 175
mJ
V/ns
TJ
TSTG
c
e
c
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
°C
300
Thermal Resistance
RJC
RJA
RJA
g
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
h
Typ.
Max.
Units
–––
–––
–––
5.3
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/10/11
AUIRLR014N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
–––
1.0
3.1
–––
–––
–––
–––
–––
0.056
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.14
0.21
3.0
–––
25
250
100
-100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 6.0A
VGS = 4.5V, ID = 5.0A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 6.0A
μA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 150°C
nA VGS = 16V
VGS = -16V
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.5
47
12
23
4.5
7.9
1.4
4.4
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = 6.0A
VDS = 44V
VGS = 5.0V, See Fig. 6 & 13
VDD = 28V
ID = 6.0A
RG = 6.2VGS = 5.0V
RD = 4.5See Fig. 10
Between lead,
f
f
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Input Capacitance
–––
265
–––
and center of die contact
VGS = 0V
Coss
Output Capacitance
–––
80
–––
Crss
Reverse Transfer Capacitance
–––
38
–––
D
G
S
VDS = 25V
pF
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
IS
Min. Typ. Max. Units
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
trr
Reverse Recovery Time
–––
37
56
ns
TJ = 25°C, IF = 6.0A
Qrr
Reverse Recovery Charge
–––
48
71
nC
di/dt = 100A/μs
ton
Forward Turn-On Time
–––
10
Conditions
ISM
c
–––
MOSFET symbol
showing the
integral reverse
Continuous Source Current
(Body Diode)
Pulsed Source Current
A
–––
–––
40
V
D
G
S
p-n junction diode.
TJ = 25°C, IS = 6.0A, VGS = 0V
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.96mH
RG = 25, IAS = 6A. (See Figure 12)
ISD 6.0A, di/dt 210A/μs, VDD V(BR)DSS,
TJ 175°C.
2
Pulse width 300μs; duty cycle 2%.
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
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AUIRLR014N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
ESD
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
†††
Machine Model
Class M1B (+/- 75V)
AEC-Q101-002
Human Body Model
Class H1A (+/- 300V)
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 2000V)
AEC-Q101-005
RoHS Compliant
†††
†††
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRLR014N
10
100
VGS
VGS
TOP
TOP 15V
15V
12V10V
10V
5.0V
7.0V
4.5V
5.0V
3.5V
4.5V
3.0V
2.7V
2.7V
BOTTOM
2.0V
BOTTOM
2.5V
1
2.5V
20μs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
10
TJ = 175 ° C
10
1
V DS = 50V
20μs PULSE WIDTH
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
4
10
100
Fig 2. Typical Output Characteristics
2.5
8.0
1
VDS , Drain-to-Source Voltage (V)
100
6.0
20μs PULSE WIDTH
TJ = 175 °C
0.1
0.1
100
Fig 1. Typical Output Characteristics
4.0
2.5V
1
VDS , Drain-to-Source Voltage (V)
0.1
2.0
VGS
VGS
15V
15V
12V
10V
10V
5.0V
7.0V
4.5V
5.0V
3.5V
4.5V
3.0V
2.7V
2.7V
BOTTOM
BOTTOM2.0V
2.5V
TOP
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
ID = 10A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRLR014N
Ciss
400
C, Capacitance (pF)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
300
Coss
200
Crss
100
0
1
10
15
VGS , Gate-to-Source Voltage (V)
500
VDS = 44V
VDS = 27V
10
5
0
100
ID = 6 A
FOR TEST CIRCUIT
SEE FIGURE 13
0
VDS , Drain-to-Source Voltage (V)
4
6
8
10
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
2
QG , Total Gate Charge (nC)
10
TJ = 175 ° C
1
TJ = 25 ° C
0.1
0.2
0.6
1.0
V GS = 0 V
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.8
10us
10
100us
1ms
1
0.1
10ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRLR014N
RD
VDS
10.0
V GS
8.0
ID , Drain Current (A)
D.U.T.
+
RG
-
VDD
10V
6.0
Pulse Width µs
Duty Factor
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
0.0
90%
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
0.20
1
0.10
PDM
0.05
0.02
0.01
0.1
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
L
VDS
D.U.T
RG
IAS
20V
DRIVER
+
- VDD
0.01
10V t p
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
AUIRLR014N
60
TOP
50
BOTTOM
ID
2.4A
5.0A
6.0A
40
30
20
10
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50K
QG
12V
.2F
.3F
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRLR014N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
-
-
+
+
-
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
RG
Driver Gate Drive
P.W.
Period
D=
VDD
P.W.
Period
*
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRLR014N
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AULR014N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRLR014N
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
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AUIRLR014N
Ordering Information
Base part
number
Package Type
AUIRLR014N
Dpak
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Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRLR014N
AUIRLR014NTR
AUIRLR014NTRL
AUIRLR014NTRR
11
AUIRLR014N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products
and services at any time and to discontinue any product or services without notice. Part numbers designated with the
“AU” prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance
and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time
of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with
IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support
this warranty. Except where mandated by government requirements, testing of all parameters of each product is not
necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and
is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with
alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.
Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product
or service voids all express and any implied warranties for the associated IR product or service and is an unfair and
deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of
the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products
for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture
of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR
products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as
military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR
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all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the
designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications,
IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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