PHILIPS BFQ226 Npn video transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ226
NPN video transistor
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
1996 Sep 04
Philips Semiconductors
Product specification
NPN video transistor
BFQ226
APPLICATIONS
• Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
4
handbook, halfpage
DESCRIPTION
NPN silicon transistor encapsulated
in a 4-lead plastic SOT223 package.
PINNING
1
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
2
Top view
3
MSB002 - 1
Fig.1 Simplified outline SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
IC
collector current (DC)
Ptot
total power dissipation
CONDITIONS
TYP.
MAX.
UNIT
−
100
V
−
100
mA
up to Ts = 60 °C
−
3
W
open emitter
fT
transition frequency
IC = 25 mA; VCE = 10 V
1
−
GHz
Cre
feedback capacitance
IC = 0; VCB = 10 V
1.7
−
pF
Tj
junction temperature
−
175
°C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
100
V
VCER
collector-emitter voltage
RBE = 100 Ω
−
95
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
see Fig.2
−
100
mA
IC(AV)
average collector current
see Fig.2
−
100
mA
Ptot
total power dissipation
up to Ts = 60 °C; note 1; see Fig.3
−
3
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1996 Sep 04
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ226
MBG491
103
handbook, halfpage
MBG492
4
handbook, halfpage
Ptot
(W)
IC
(mA)
3
102
2
1
10
10
102
VCE (V)
0
103
0
Ts = 60 °C.
Ts (oC)
100
200
VCE ≤ 50 V.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
VALUE
UNIT
38.5
K/W
Ptot = 3 W; up to Ts = 60 °C; note 1
Note
1. Ts is the temperature of the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
100
−
−
V
collector-emitter breakdown voltage IC = 1 mA; RBE = 100 Ω
95
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IC = 0; IE = 0.1 mA
3
−
−
V
ICES
collector-emitter leakage current
VCE = 50 V; VBE = 0
−
−
100
µA
hFE
DC current gain
IC = 25 mA; VCE = 10 V;
see Fig.4
20
−
−
fT
transition frequency
IC = 25 mA; VCE = 10 V;
f = 500 MHz; see Fig.5
−
1
−
GHz
Cre
feedback capacitance
IC = 0; VCB = 10 V; f = 1 MHz;
see Fig.6
−
1.7
−
pF
V(BR)CBO
collector-base breakdown voltage
V(BR)CER
1996 Sep 04
IC = 0.1 mA; IE = 0
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ226
MBG493
60
MBG494
1.2
handbook, halfpage
handbook, halfpage
fT
(MHz)
hFE
40
0.8
20
0.4
0
0
0
20
40
60
80
100
IC (mA)
10
20
VCE = 10 V; tp = 500 µs.
VCE = 10 V; f = 500 MHz.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
MBG495
4
handbook, halfpage
Cre
(pF)
3
2
1
0
0
2
4
6
8
10
VCB (V)
f = 1 MHz.
Fig.6
Feedback capacitance as a function of
collector-base voltage; typical values.
1996 Sep 04
4
50
IC (mA)
102
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN video transistor
BFQ226
PACKAGE OUTLINE
0.95
0.85
handbook, full pagewidth
S
0.1 S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
4
A
0.10
0.01
16 o
max
16
3.7
3.3
10 o
max
2
0.80
0.60
2.3
4.6
Dimensions in mm.
Fig.7 SOT223.
1996 Sep 04
7.3
6.7
o
1
1.80
max
0.2 M A
5
3
0.1 M B
(4x)
MSA035 - 1
Philips Semiconductors
Product specification
NPN video transistor
BFQ226
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 04
6
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