BaiDu Micro ES1J Surface mount glass superfast recovery rectifer Datasheet

百度微电子有限公司
BAIDU MICRO ELECTRONS CO., LTD.
ES1A thru ES1J
SURFACE MOUNT GLASS SUPERFAST
RECOVERY RECTIFERS
REVERSE VOLTAGE - 50 to 600 Volts
FORWARD CURRENT - 1.0 Amperes
FEATURES
SMA(DO-214AC)
● Super fast switching time for high efficiency
●Low forward voltage drop and
high current capability
.051(1.30)
.039(1.00)
●Low reverse leakage current
.114(2.90)
.098(2.50)
●Plastic material has UL flammability
classification 94V-0
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
.103(2.62)
.079(2.00)
MECHANICAL DATA
●Case: Molded Plastic
●Polarity: lndicated by cathode band
.060(1.52)
.030(0.76)
●Weight: 0.002 ounces,0.064 grams
●Mounting position: Any
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL
ES1A
ES1B
ES1D
ES1G
ES1J
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
V
VDC
50
100
200
400
600
V
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA=55 ℃
I(AV)
1.0
A
IFSM
30
A
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 1.0A DC
VF
Maximum DC Reverse Current
@TJ=25℃
at Rated DC Blocking Voltage
@TJ=100℃
Maximum Reverse Recovery Time(Note 1)
Tyical Junction Capacitance (Note2)
Tyical Thermal Resistance (Note3)
Operating Temperature Range
Storage Temperature Range
1.70
35
30
V
μA
100
TRR
CJ
1.25
5.0
IR
nS
25
pF
RθJA
40
℃/W
TJ
-55 to +150
℃
TSTG
-55 to +150
℃
NOTES: 1.Measured with IF=0.5A, IR=1A, IRR=0.25A
2.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
3.Thermal resistance junction of ambient.
0.95
百度微电子有限公司
BAIDU MICRO ELECTRONS CO., LTD.
ES1A thru ES1J
FIG. 1 – FORWARD CURRENT DERATING CURVE
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
40
0.8
0.6
0.4
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.2
0
25
50
75
100
125
150
175
PEAK FORWARD SURGE CURRENT
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
1.0
30
20
10
PULSE WIDTH 8.3ms
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0
2
1
AMBIENT TEMPERATURE (℃)
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.3 – TYPICAL JUNCTION CAPACITANCE
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT,
(A)
100
ES1A - ES1D
CAPACITANCE (pF)
5
ES1G-ES1J
10
T J = 25°C f = 1 MHz
ES1A -ES1D
10
T J = 25°C
PULSE WIDTH 300us
ES1G
1.0
ES1J
0.1
1
1
4
10
REVERSE VOLTAGE ,VOLTS
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE ,VOLTS
1.8
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