PHILIPS BLV20 Vhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV20
VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
BLV20
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter
class-B circuit
MODE OF
OPERATION
VCE
V
f
MHz
PL
W
Gp
dB
η
%
zi
Ω
YL
mS
c.w.
28
175
8
> 12
> 65
1,8 + j0,7
18 − j20
PIN CONFIGURATION
halfpage
1
4
c
PINNING - SOT123
PIN
handbook, halfpage
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
b
MBB012
2
e
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of
which is toxic. The device is entirely safe provided that the BeO disc is
not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV20
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
vCESM
max.
65 V
Collector-emitter voltage (open base)
VCEO
max.
36 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
0,9 A
Collector current (peak value); f > 1 MHz
ICM
max.
2,5 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
20 W
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
MGP272
200 °C
MGP273
30
1
handbook, halfpage
handbook, halfpage
Ptot
(W)
IC
ΙΙΙ
(A)
20
0.5
derate by 0.12 W/K
Tmb = 25 °C
Th = 70 °C
ΙΙ
0.1 W/K
10
0
10
Ι
0
20
30
VCE (V)
0
40
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j−mb(dc)
=
10,7 K/W
From junction to mounting base (r.f. dissipation)
Rth j−mb(rf)
=
8,6 K/W
From mounting base to heatsink
Rth mb−h
=
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV20
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR)CES
>
65 V
V(BR)CEO
>
36 V
V(BR)EBO
>
4 V
ICES
<
1 mA
open base
ESBO
>
0,5 mJ
RBE = 10 Ω
ESBR
>
0,5 mJ
typ.
50
VBE = 0; IC = 2 mA
Collector-emitter breakdown voltage
open base; IC = 10 mA
Emitter-base breakdown voltage
open collector; IE = 1 mA
Collector cut-off current
VBE = 0; VCE = 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain
(1)
hFE
IC = 0,4 A; VCE = 5 V
Collector-emitter saturation voltage
10 to 100
(1)
IC = 1,25 A; IB = 0,25 A
VCEsat
typ.
0,8 V
−IE = 0,4 A; VCB = 28 V
fT
typ.
600 MHz
−IE = 1,25 A; VCB = 28 V
fT
typ.
520 MHz
Cc
typ.
10 pF
IC = 50 mA; VCE = 28 V
Cre
typ.
7,1 pF
Collector-flange capacitance
Ccf
typ.
2 pF
Transition frequency at f = 100 MHz (1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV20
MGP275
MGP274
100
40
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
30
VCE = 28 V
5V
50
20
typ
10
0
0
0
0.5
1
IC (A)
1.5
0
Fig.4 Typical values; Tj = 25 °C.
10
20
VCB (V)
30
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP276
1000
handbook, full pagewidth
fT
(MHz)
VCB = 28 V
20 V
500
0
0
0.5
1
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
−IE (A)
1.5
Philips Semiconductors
Product specification
VHF power transistor
BLV20
APPLICATION INFORMATION
R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
η (%)
zi (Ω)
YL (mS)
175
28
8
< 0,5
> 12
< 0,44
> 65
1,8 + j0,7
18 − j20
handbook, full pagewidth
L4
C1
50 Ω
C6
50 Ω
T.U.T.
L3
L1
L7
C7
L5
C2
L2
C3
C4
C5
R1
L6
+VCC
MGP253
Fig.7 Test circuit; c.w. class-B.
List of components:
C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3 = 27 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
L1 = 1 turn Cu wire (1,6 mm); int. dia. 8,4 mm; leads 2 × 5 mm
L2 = 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube wide band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
L6 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L7 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 8,2 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = R2 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV20
150
handbook, full pagewidth
72
L6
+VCC
C4
C5
L5
L3
C1
C2
L4
L1
C6
L7
L2
R1
C7
C3
rivet
MGP254
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV20
MGP277
MGP278
15
15
handbook, halfpage
handbook, halfpage
PL
Gp
(W)
(dB)
10
Gp
Th = 25 °C
70 °C
100
10
Th = 25 °C
η
(%)
Th = 25 °C
70 °C
70 °C
η
5
5
50
0
0
0
0.5
PS (W)
0
1
Fig.9 Typical values; VCE = 28 V; f = 175 MHz.
10
PL (W)
Fig.10 Typical values; VCE = 28 V; f = 175 MHz.
MGP279
11
handbook, halfpage
PLnom
(W)
(VSWR = 1)
10
Th =
50 °C
9
70 °C
8
90 °C
The graph shows the permissible output power under nominal
conditions (VSWR = 1) as a function of the expected VSWR during
short-time mismatch conditions with heatsink temperatures as
parameter.
7
1
10
VSWR
102
Fig.11 R.F. SOAR; c.w. class-B operation; f = 175 MHz; VCE = 28 V; Rth mb-h = 0,3 K/W.
August 1986
0
20
8
Philips Semiconductors
Product specification
VHF power transistor
BLV20
MGP280
12
MGP281
0
150
handbook,
r halfpage
handbook, halfpage
i
(Ω)
10
RL
(Ω)
5
xi
xi
(Ω)
8
CL
−20
100
0
CL
(pF)
RL
xi
6
−5
RL
CL
4
−40
50
ri
2
−10
ri
0
0
200
f (MHz)
0
400
0
0
Typical values; VCE = 28 V;
PL = 8 W;
Th = 25 °C
200
f (MHz)
−60
400
Typical values; VCE = 28 V;
PL = 8 W;
Th = 25 °C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (parallel components).
OPERATING NOTE
Below 100 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP282
30
handbook, halfpage
Gp
(dB)
20
10
0
0
200
f (MHz)
400
Typical values; VCE = 28 V;
PL = 8 W;
Th = 25 °C
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
BLV20
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
August 1986
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
VHF power transistor
BLV20
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11
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