DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLV20 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W Gp dB η % zi Ω YL mS c.w. 28 175 8 > 12 > 65 1,8 + j0,7 18 − j20 PIN CONFIGURATION halfpage 1 4 c PINNING - SOT123 PIN handbook, halfpage DESCRIPTION 1 collector 2 emitter 3 base 4 emitter b MBB012 2 e 3 MSB057 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor BLV20 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value vCESM max. 65 V Collector-emitter voltage (open base) VCEO max. 36 V Emitter-base voltage (open collector) VEBO max. 4 V Collector current (average) IC(AV) max. 0,9 A Collector current (peak value); f > 1 MHz ICM max. 2,5 A R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Prf max. 20 W Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. MGP272 200 °C MGP273 30 1 handbook, halfpage handbook, halfpage Ptot (W) IC ΙΙΙ (A) 20 0.5 derate by 0.12 W/K Tmb = 25 °C Th = 70 °C ΙΙ 0.1 W/K 10 0 10 Ι 0 20 30 VCE (V) 0 40 50 Th (°C) 100 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz. Fig.2 D.C. SOAR. THERMAL RESISTANCE (dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) Rth j−mb(dc) = 10,7 K/W From junction to mounting base (r.f. dissipation) Rth j−mb(rf) = 8,6 K/W From mounting base to heatsink Rth mb−h = 0,3 K/W August 1986 3 Philips Semiconductors Product specification VHF power transistor BLV20 CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage V(BR)CES > 65 V V(BR)CEO > 36 V V(BR)EBO > 4 V ICES < 1 mA open base ESBO > 0,5 mJ RBE = 10 Ω ESBR > 0,5 mJ typ. 50 VBE = 0; IC = 2 mA Collector-emitter breakdown voltage open base; IC = 10 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 36 V Second breakdown energy; L = 25 mH; f = 50 Hz D.C. current gain (1) hFE IC = 0,4 A; VCE = 5 V Collector-emitter saturation voltage 10 to 100 (1) IC = 1,25 A; IB = 0,25 A VCEsat typ. 0,8 V −IE = 0,4 A; VCB = 28 V fT typ. 600 MHz −IE = 1,25 A; VCB = 28 V fT typ. 520 MHz Cc typ. 10 pF IC = 50 mA; VCE = 28 V Cre typ. 7,1 pF Collector-flange capacitance Ccf typ. 2 pF Transition frequency at f = 100 MHz (1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. August 1986 4 Philips Semiconductors Product specification VHF power transistor BLV20 MGP275 MGP274 100 40 handbook, halfpage handbook, halfpage Cc (pF) hFE 30 VCE = 28 V 5V 50 20 typ 10 0 0 0 0.5 1 IC (A) 1.5 0 Fig.4 Typical values; Tj = 25 °C. 10 20 VCB (V) 30 Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. MGP276 1000 handbook, full pagewidth fT (MHz) VCB = 28 V 20 V 500 0 0 0.5 1 Fig.6 Typical values; f = 100 MHz; Tj = 25 °C. August 1986 5 −IE (A) 1.5 Philips Semiconductors Product specification VHF power transistor BLV20 APPLICATION INFORMATION R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 °C f (MHz) VCE (V) PL (W) PS (W) Gp (dB) IC (A) η (%) zi (Ω) YL (mS) 175 28 8 < 0,5 > 12 < 0,44 > 65 1,8 + j0,7 18 − j20 handbook, full pagewidth L4 C1 50 Ω C6 50 Ω T.U.T. L3 L1 L7 C7 L5 C2 L2 C3 C4 C5 R1 L6 +VCC MGP253 Fig.7 Test circuit; c.w. class-B. List of components: C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C6 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) C3 = 27 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor L1 = 1 turn Cu wire (1,6 mm); int. dia. 8,4 mm; leads 2 × 5 mm L2 = 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm L3 = L8 = Ferroxcube wide band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = L5 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor L6 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 9,0 mm; leads 2 × 5 mm L7 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 8,2 mm; leads 2 × 5 mm L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = R2 = 10 Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.8. August 1986 6 Philips Semiconductors Product specification VHF power transistor BLV20 150 handbook, full pagewidth 72 L6 +VCC C4 C5 L5 L3 C1 C2 L4 L1 C6 L7 L2 R1 C7 C3 rivet MGP254 Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. August 1986 7 Philips Semiconductors Product specification VHF power transistor BLV20 MGP277 MGP278 15 15 handbook, halfpage handbook, halfpage PL Gp (W) (dB) 10 Gp Th = 25 °C 70 °C 100 10 Th = 25 °C η (%) Th = 25 °C 70 °C 70 °C η 5 5 50 0 0 0 0.5 PS (W) 0 1 Fig.9 Typical values; VCE = 28 V; f = 175 MHz. 10 PL (W) Fig.10 Typical values; VCE = 28 V; f = 175 MHz. MGP279 11 handbook, halfpage PLnom (W) (VSWR = 1) 10 Th = 50 °C 9 70 °C 8 90 °C The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. 7 1 10 VSWR 102 Fig.11 R.F. SOAR; c.w. class-B operation; f = 175 MHz; VCE = 28 V; Rth mb-h = 0,3 K/W. August 1986 0 20 8 Philips Semiconductors Product specification VHF power transistor BLV20 MGP280 12 MGP281 0 150 handbook, r halfpage handbook, halfpage i (Ω) 10 RL (Ω) 5 xi xi (Ω) 8 CL −20 100 0 CL (pF) RL xi 6 −5 RL CL 4 −40 50 ri 2 −10 ri 0 0 200 f (MHz) 0 400 0 0 Typical values; VCE = 28 V; PL = 8 W; Th = 25 °C 200 f (MHz) −60 400 Typical values; VCE = 28 V; PL = 8 W; Th = 25 °C Fig.12 Input impedance (series components). Fig.13 Load impedance (parallel components). OPERATING NOTE Below 100 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. MGP282 30 handbook, halfpage Gp (dB) 20 10 0 0 200 f (MHz) 400 Typical values; VCE = 28 V; PL = 8 W; Th = 25 °C Fig.14 August 1986 9 Philips Semiconductors Product specification VHF power transistor BLV20 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q C B U1 w2 M C c H b L 4 3 α A p U3 U2 w1 M A B 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 mm 7.47 6.37 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 2.72 2.31 20.71 19.93 5.61 5.16 3.33 3.04 4.63 4.11 18.42 25.15 24.38 6.61 6.09 9.78 9.39 0.51 1.02 inches 0.294 0.251 0.229 0.007 0.219 0.004 0.182 0.725 0.162 0.99 0.96 0.26 0.24 0.385 0.370 0.02 0.04 OUTLINE VERSION 0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785 0.221 0.131 0.203 0.120 REFERENCES IEC JEDEC EIAJ SOT123A August 1986 α 45° EUROPEAN PROJECTION ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification VHF power transistor BLV20 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11