FDMS8320L N-Channel PowerTrench® MOSFET 40 V, 100 A, 1.1 mΩ Features General Description Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced engineered for soft recovery body diode technology, Applications MSL1 robust package design OringFET / Load Switching 100% UIL tested Synchronous Rectification RoHS Compliant DC-DC Conversion Bottom Top Pin 1 S S Pin 1 D D D S G D S D S D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 100 238 (Note 1a) -Pulsed 36 A 150 Single Pulse Avalanche Energy EAS Ratings 40 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 264 104 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8320L Device FDMS8320L ©2012 Fairchild Semiconductor Corporation FDMS8320L Rev.C3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS8320L N-Channel PowerTrench® MOSFET June 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V 100 nA 3.0 V 40 V 21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -6 VGS = 10 V, ID = 32 A 0.8 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 27 A 1.0 1.5 VGS = 10 V, ID = 32 A, TJ = 125 °C 1.2 1.7 VDS = 5 V, ID = 32 A 206 gFS Forward Transconductance 1.0 1.7 mV/°C 1.1 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20 V, VGS = 0 V, f = 1 MHz 0.1 8350 11110 pF 2840 3780 pF 169 295 pF 1.3 2.6 Ω 17 30 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 20 V, ID = 32 A, VGS = 10 V, RGEN = 6 Ω 19 35 ns 68 110 ns tf Fall Time 17 30 ns Qg Total Gate Charge VGS = 0 V to 10 V 121 170 nC Qg Total Gate Charge 117 Gate to Source Charge VGS = 0 V to 4.5 V VDD = 20 V, ID = 32 A 58 Qgs 19.2 nC Qgd Gate to Drain “Miller” Charge 16.5 nC nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.65 1.1 VGS = 0 V, IS = 32 A (Note 2) 0.74 1.2 68 108 ns 59 95 nC IF = 32 A, di/dt = 100 A/μs IF = 32 A, di/dt = 300 A/μs V 53 85 ns 104 167 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 42 A, VDD = 36 V, VGS = 10 V. FDMS8320L Rev.C3 2 www.fairchildsemi.com FDMS8320L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 120 ID, DRAIN CURRENT (A) 5 VGS = 10 V VGS = 4.5 V VGS = 4 V VGS = 3.5 V VGS = 3 V 90 60 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.2 0.4 0.6 0.8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 4 VGS = 3 V 3 VGS = 3.5 V 2 1 VGS = 4 V 0 1.0 0 30 Figure 1. On Region Characteristics 90 120 150 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 5 ID = 32 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 32 A 3 2 TJ = 125 oC 1 TJ = 25 oC 0 -50 -25 0 25 50 75 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 4 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 1000 150 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 120 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V VDS = 5 V 90 TJ = 150 oC 60 TJ = 25 oC 30 TJ = -55 oC 0 1.0 1.5 2.0 2.5 3.0 100 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 0.001 0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDMS8320L Rev.C3 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS8320L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 30000 ID = 32 A 10000 8 Ciss VDD = 20 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 16 V VDD = 24 V 4 Coss 1000 100 2 0 0 25 50 75 100 10 0.1 125 1 40 Figure 8. Capacitance vs Drain to Source Voltage 200 240 100 200 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Figure 7. Gate Charge Characteristics TJ = 25 oC TJ = 100 oC 10 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 125 oC VGS = 10 V 160 VGS = 4.5 V 120 80 Limited by Package 40 o RθJC = 1.2 C/W 1 0.01 0.1 1 10 100 0 25 1000 50 100 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 1000 100 1 ms 10 10 ms 1 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V THIS AREA IS LIMITED BY rDS(on) 0.1 0.01 0.01 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s TA = 25 oC DC 0.1 1 10 100200 VDS, DRAIN to SOURCE VOLTAGE (V) TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDMS8320L Rev.C3 SINGLE PULSE RθJA = 125 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8320L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS8320L Rev.C3 5 www.fairchildsemi.com FDMS8320L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS8320L N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMS8320L Rev.C3 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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I61 FDMS8320L Rev.C3 7 www.fairchildsemi.com FDMS8320L N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PowerTrench® F-PFS™ The Power Franchise® ® PowerXS™ AccuPower™ FRFET® Global Power ResourceSM Programmable Active Droop™ AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® GTO™ CROSSVOLT™ ™ TINYOPTO™ IntelliMAX™ CTL™ TinyPower™ Saving our world, 1mW/W/kW at a time™ ISOPLANAR™ Current Transfer Logic™ TinyPWM™ Marking Small Speakers Sound Louder SignalWise™ DEUXPEED® TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ ® SuperSOT™-3 MillerDrive™ Fairchild UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™