AO3413 P-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Features Top View VDS (V) = -20V ID = -3 A RDS(ON) < 97mΩ (VGS = -4.5V) RDS(ON) < 130mΩ (VGS = -2.5V) RDS(ON) < 190mΩ (VGS = -1.8V) General Description D The AO3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C ID IDM B Junction and Storage Temperature Range 2014-5-29 Units V ±8 V A -2.4 -15 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum -20 -3 TA=25°C Power Dissipation A S W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W www.kersemi.com KSM3413 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage RDS(ON) gFS VSD IS On state drain current Gate resistance Qgd tD(on) tr Gate Drain Charge Turn-On DelayTime tD(off) Turn-Off DelayTime Turn-Off Fall Time Qrr ID=-250µA, VGS=0V VDS=-16V, VGS=0V -20 Turn-On Rise Time Typ VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3A Max Units V -1 -5 TJ=55°C -0.3 -15 TJ=125°C VGS=-2.5V, ID=-2.6A VGS=-1.8V, ID=-1A VDS=-5V, ID=-3A Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge tf trr Min Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Conditions 4 µA -0.55 ±100 -1 nA V A 81 111 108 97 135 130 146 7 -0.78 190 mΩ -1 S V -2 A mΩ mΩ 540 pF VGS=0V, VDS=-10V, f=1MHz 72 49 pF pF VGS=0V, VDS=0V, f=1MHz 12 Ω 6.1 nC 0.6 1.6 nC nC 10 12 ns ns 44 22 21 ns ns VGS=-4.5V, VDS=-10V, ID=-3A VGS=-4.5V, VDS=-10V, RL=3.3Ω, RGEN=3Ω IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 7.5 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 2014-5-29 2 www.kersemi.com KSM3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 15 -4.5V -3.0V VDS=-5V -2.5V -8V 4 10 -ID(A) -ID (A) -2.0V 2 5 125°C VGS=-1.5V 25°C 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 5 0 200 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance 1.8 VGS=-1.8V RDS(ON) (mΩ) 0.5 150 VGS=-2.5V 100 VGS=-4.5V 50 VGS=-2.5V 1.6 VGS=-1.8V 1.4 VGS=-4.5V 1.2 1 0.8 0 2 4 6 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 1E+00 ID=-4A 1E-01 -IS (A) RDS(ON) (mΩ) 150 125°C 100 25°C 125°C 1E-02 25°C 1E-03 1E-04 1E-05 50 0 2 4 6 1E-06 8 0.0 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 2014-5-29 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 3 www.kersemi.com KSM3413 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 VDS=-10V ID=-3A Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 TJ(Max)=150°C TA=25°C 10µs Power (W) 15 1ms RDS(ON) limited 0.1s 20 TJ(Max)=150°C TA=25°C 100µs 10.0 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 -ID (Amps) 5 10ms 1.0 10 5 1s 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 1 0.1 1 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W PD 0.1 Ton Single Pulse 0.01 0.00001 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 2014-5-29 4 www.kersemi.com