D56/ www.daysemi.jp N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 13.8 nC RoHS COMPLIANT APPLICATIONS • Low-Side Switch • Notebook DC/DC D TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Limit 30 ± 20 40a 40a 22.7b, c 19.7b, c 70 35 61 40a 4.1b, c 50 32 5b, c 3.2b, c - 55 to 150 260 ID IDM IAS EAS IS PD TJ, Tstg Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 2.0 Maximum 25 2.5 Unit °C/W Notes: a. Based on TC = 25 °C. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. 1 D56/ www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 27 ID = 250 µA mV/°C - 5.5 VGS(th) VDS = VGS , ID = 250 µA 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V 1 µA A 50 VGS = 10 V, ID = 20 A 0.0047 0.0057 VGS = 4.5 V, ID = 18 A 0.0062 0.0076 VDS = 15 V, ID = 20 A 90 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1720 VDS = 15 V, VGS = 0 V, f = 1 MHz 130 VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A td(off) 29 44 13.8 21 5.0 f = 1 MHz VDD = 15 V, RL = 15 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω 1.1 2.2 25 40 14 25 30 45 tf 15 25 td(on) 11 20 tr td(off) nC 4.6 td(on) tr pF 355 VDD = 15 V, RL = 15 Ω ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω tf 9 15 27 40 9 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 40 70 IS = 4.1 A, VGS = 0 V IF = 4.1 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.75 1.2 V 25 50 ns 17 35 nC 13 12 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 1.2 VGS = 10 thru 4 V 1.0 50 I D - Drain Current (A) I D - Drain Current (A) 60 40 VGS = 3 V 30 20 TC = 25 °C 0.6 0.4 TC = 125 °C 0.2 10 0 0.0 0.5 1.0 1.5 TC = - 55 °C 0.0 0.0 2.0 0.5 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 2400 0.007 C - Capacitance (pF) 0.006 VGS = 10 V 0.005 Ciss 1800 VGS = 4.5 V 1200 600 Coss 0.004 Crss 0 0.003 0 10 20 30 40 50 60 6 0 70 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.7 10 ID = 20 A ID = 20 A VDS = 15 V 1.5 8 VDS = 7.5 V 6 VDS = 22.5 V 4 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 VDS - Drain-to-Source Voltage (V) 0.008 R DS(on) - On-Resistance (Ω) 0.8 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 6 12 18 Qg - Total Gate Charge (nC) Gate Charge 24 30 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.030 0.025 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 TJ = - 50 °C 0.01 0.020 0.015 TJ = 125 °C 0.010 0.005 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) 0.2 160 Power (W) VGS(th) Variance (V) 200 - 0.1 ID = 1 mA - 0.7 0 25 50 75 100 8 9 10 125 80 0 0.001 150 0.01 0.1 1 Time (s) TJ - Temperature (°C) Single Pulse Power (Junction-to-Ambient) 100 Limited by RDS(on)* 100 µs 1 ms 10 I D - Drain Current (A) 7 120 Threshold Voltage 10 ms 100 ms 1 1s 10 s 0.1 100 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 6 40 ID = 250 µA - 25 5 On-Resistance vs. Gate-to-Source Voltage 0.5 - 1.0 - 50 4 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage - 0.4 3 100 10 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I D - Drain Current (A) 80 60 Package Limited 40 20 0 25 0 50 75 100 125 150 TC - Case Temperature (°C) 60 2.5 48 2.0 Power (W) Power (W) Current Derating* 36 24 12 1.5 1.0 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 Package Information TO-252AA CASE OUTLINE E C2 L3 H D b2 C A1 D1 e1 L gage plane height (0.5 mm) e L5 L4 b INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E1 Note • Dimension L3 is for reference only. 1 Application Note RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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