Foshan BT151 Thyristor in a to-220 plastic package Datasheet

BT151
Rev.D Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-220 塑封封装 单向可控硅。Thyristor in a TO-220 Plastic Package.
特征
/ Features
芯片采用玻璃钝化和塑氧环脂封装。
Glass passivated thyristors in a plastic envelope.
用途
/
Applications
主要应用于要求双向高电压承受能力和高效热转换领域,其典型应用于马达控制、工业和家庭照明、加
热和静电开关。
Use in applications requiring high bidirectional blocking voltage capability and high thermal cycling
performance.Typical applications include motor control,industrial and domestic lighting, heating and
static switching.
内部等效电路
引脚排列
1
2
/ Equivalent Circuit
/ Pinning
3
PIN1:Cathode
放大及印章代码
PIN 2:Anode
PIN 3:Gate
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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BT151
Rev.D Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
-500R
-650R
-800R
500
650
800
单位
Unit
Repetitive peak off-state voltages
VDRM
VRRM
Average on-state current
IT(AV)
7.5
A
RMS on-state current
IT(RMS)
12
A
Non-repetitive peak on-state current
ITSM(t=10ms)
100
A
Non-repetitive peak on-state current
ITSM(t=8.3ms)
110
A
I t(t=10ms)
50
A2S
dIT/dt
50
A/μs
Peak gate current
IGM
2
A
Peak gate voltage
VGM
5
V
Peak reverse gate voltage
VRGM
5
V
Peak gate power
PGM
5
W
PG(AV)
0.5
W
Tj
125
℃
Tstg
-40~150
℃
Thermal resistance junction to ambient
Rth(j-a)
60
K/W
Thermal resistance junction to mounting base
Rth(j-mb)
1.3
K/W
2
2
I t for fusing
Repetitive rate of rise of on-state current after
triggering
Average gate power
(Over any 20 ms period)
Operating Junction Temperature
Storage Temperature Range
电性能参数
V
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Gate trigger current
IGT
VD=12V
IT=0.1A
2
15
mA
Latching current
IL
VD=12V
IGT=0.1A
10
40
mA
Holding current
IH
VD=12V
IGT=0.1A
7
20
mA
On-state voltage
VT
1.4
1.75
V
0.6
1.5
IT=23A
VD=12V
Gate trigger voltage
VGT
Off-state leakage current
ID,IR
Gate controlled turn-on
time
tgt
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IT=0.1A
VD=VDRM(max) IT=0.1A
Tj=125℃
VD=VDRM(max) VR=VRRM(max)
Tj=125℃
ITM=40A
VD=VDRM IG=0.1A
dIg/dt=5A/μs
0.25
V
0.4
0.1
2
0.5
mA
μs
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BT151
Rev.D Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
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BT151
Rev.D Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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BT151
Rev.D Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
650R
****
BT151

说明:
BR:
为公司代码
BT151: 
为产品型号
650R:

为耐压分档
****:

为生产批号代码,随生产批号变化。

Company Code
Note:
BR:  
BT151:
Product Type.
650R:
Withstand Voltage Symbol
****:
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Lot No. Code, code change with Lot No.
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BT151
Rev.D Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
TO-220/F
套管包装
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
散件包装
TO-220/F
时间:10±1 sec.
/ BULK
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Bag
只/袋
Bags/Inner Box
袋/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Bag 袋
Inner Box 盒
Outer Box 箱
200
10
2,000
5
10,000
135×190
237×172×102
560×245×195
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
50
20
1,000
5
5,000
532×31.4×5.5
555×164×50
575×290×180
/ Notices
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