New Product DG611A/DG612A/DG613A Vishay Siliconix 1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches DESCRIPTION FEATURES The DG611A, DG612A and DG613A contain four independently selectable SPST switches. They offer improved performance over the industry standard DG611 series. The DG611A and DG612A have all switches normally closed and normally open respectively, while the DG613A has 2 normally open and 2 normally closed switches. They are designed to operate from a 2.7 V to 12 V single supply or from ± 2.7 V to ± 5 V dual supplies and are fully specified at + 3 V, + 5 V and ± 5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from + 5 V or ± 5 V supplies and 1.4 V when operating from a + 3 V supply. The DG611A, DG612A and DG613A switches conduct equally well in both directions and offer rail to rail analog signal handling. 1 pC low charge injection, coupled with very low switch capacitance: 2 pF, fast switching speed: ton/toff 27 ns/16 ns and excellent 3 dB bandwidth: 720 MHz, make these products ideal for precision instrumentation, high-end data acquisition, automated test equipment and high speed communication applications. Operation temperature is specified from - 40 °C to + 125 °C. The DG611A, DG612A and DG613A are available in 16 lead SOIC, TSSOP and the space saving 1.8 x 2.6 mm miniQFN packages. • • • • • • • • • • • Low charge injection (1 pC typ.) Leakage current < 0.25 nA at 85 °C RoHS Low switch capacitance (Csoff 2 pF typ.) COMPLIANT Low rDS(on) - 115 Ω maximum Fully specified with single supply operation at 3 V, 5 V and dual supplies at ± 5 V Low voltage, 2.5 V CMOS/TTL compatible 720 MHz, 3 dB bandwidth Excellent isolation performance (62 dB at 10 MHz) Excellent crosstalk performance (90 dB at 10 MHz) Fully specified from - 40 °C to + 85 °C and - 40 °C to + 125 °C 16 lead SOIC, TSSOP and miniQFN package (1.8 x 2.6 mm) APPLICATIONS • • • • • • • Precision instrumentation Medical instrumentation Automated test equipment High speed communications applications High-end data acquisition Sample and hold applications Sample and hold systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG611A SOIC/TSSOP DG611A miniQFN D1 IN1 IN2 D2 IN1 1 16 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ GND 5 12 NC S4 6 11 S3 D4 7 10 D3 IN4 8 9 Top View IN3 16 Kxx Pin 1 14 13 S1 1 12 S2 V- 2 11 V+ GND 3 10 NC S4 4 9 S3 5 Device Marking: Kxx for DG611A (miniQFN16) Lxx for DG612A Pxx for DG613A xx = Date/Lot Traceability Code 15 6 7 8 D4 IN4 IN3 D3 Top View TRUTH TABLE Logic DG611A DG612A 0 ON OFF 1 OFF ON Document Number: 69904 S-72760-Rev. A, 04-Feb-08 www.vishay.com 1 New Product DG611A/DG612A/DG613A Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG613A SOIC/TSSOP DG613A miniQFN D1 IN1 IN2 D2 16 15 14 13 IN1 1 16 IN2 D1 2 15 D2 S1 1 12 S2 S1 3 14 S2 V- 2 11 V+ V- 4 13 V+ GND 3 10 NC GND 5 12 NC S4 4 9 S3 S4 6 11 S3 D4 7 10 D3 5 6 7 8 D4 IN4 IN3 D3 IN4 9 8 IN3 Top View Top View Pxx Pin 1 Device Marking: Pxx for DG613A (miniQFN16) TRUTH TABLE Logic SW1, SW4 0 OFF SW2, SW3 ON 1 ON OFF ORDERING INFORMATION Temp. Range Package Part Number 16-Pin TSSOP DG611AEQ-T1-E3 DG612AEQ-T1-E3 DG613AEQ-T1-E3 16-Pin Narrow SOIC DG611AEY-T1-E3 DG612AEY-T1-E3 DG613AEY-T1-E3 16-Pin miniQFN DG611AEN-T1-E4 DG612AEN-T1-E4 DG613AEN-T1-E4 DG611A/612A/613A - 40 °C to 125 °Ca Notes: a. - 40 °C to 85 °C datasheet limits apply. www.vishay.com 2 Document Number: 69904 S-72760-Rev. A, 04-Feb-08 New Product DG611A/DG612A/DG613A Vishay Siliconix ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Limit V+ to VGND to V- 7 Continuous Current (Any Terminal) 30 Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature - 65 to 150 16-Pin TSSOP c 16-Pin TSSOP mA °C 450 16-Pin miniQFNd 16-Pin Narrow SOIC Thermal Resistance (Package)b V (V-) - 0.3 V to (V+) + 0.3 V or 30 mA, whichever occurs first Digital Inputsa, VS, VD Power Dissipation (Package)b Unit 14 525 e mW 640 178 16-Pin miniQFN 152 16-Pin Narrow SOIC 125 °C/W Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 5.6 mW/°C above 70 °C. d. Derate 6.6 mW/°C above 70 °C. e. Derate 8.0 mW/°C above 70 °C. f. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Document Number: 69904 S-72760-Rev. A, 04-Feb-08 www.vishay.com 3 New Product DG611A/DG612A/DG613A Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Parameter Symbol V+ = + 5 V, V- = - 5 V Test Conditions Unless Specified V+ = + 5 V, V- = - 5 V VIN = 2.0 V, 0.8 Va - 40 to 125 °C Temp.b Typ.c - 40 to 85 °C Min.d Max.d Min.d Max.d Unit -5 5 -5 5 V Analog Switch Analog Signal Rangee VANALOG Full rON IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 72 115 160 115 140 ΔrON IS = 1 mA, VD = ± 3 V Room Full 0.7 4 6.5 4 5.5 rFLATNESS IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 25 40 60 40 55 IS(off) V+ = 5.5 V, V- = - 5.5 V VD = + 4.5 V/- 4.5 V VS = - 4.5 V/+ 4.5 V Room Full ± 0.02 - 0.1 -2 0.1 2 - 0.1 - 0.25 0.1 0.25 Room Full ± 0.02 - 0.1 -2 0.1 2 - 0.1 - 0.25 0.1 0.25 ID(on) V+ = 5.5 V, V- = - 5.5 V VD = VS = ± 4.5 V Room Full ± 0.02 - 0.1 -6 0.1 6 - 0.1 - 0.25 0.1 0.25 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Current, VIN High IIH VIN Under Test = 2.0 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Capacitancee CIN f = 1 MHz Room 2 Turn-On Time tON Room Full 27 55 90 55 75 Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF VS = ± 3 V, see Figure 1 Room Full 16 35 50 35 45 Break-Before-Make Time Delay tBBM DG613A only, VS = 3 V RL = 300 Ω, CL = 35 pF Room Full 15 Charge Injectione Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 1 Isolatione OIRR Room - 62 Room - 90 Room 720 Room 2 On-Resistance On-Resistance Match On-Resistance Flatness Switch Off Leakage Current ID(off) Switch On Leakage Current Ω nA Digital Control µA pF Dynamic Characteristics Off Channel-to-Channel Crosstalke 3 dB Bandwidthe e XTALK RL = 50 Ω, CL = 5 pF f = 10 MHz BW RL = 50 Ω, CL = 5 pF 2 2 pC dB MHz Source Off Capacitance CS(off) Drain Off Capacitancee CD(off) Room 3 e CD(on) f = 1 MHz; VS = VD = 0 V Room 9 THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Ω Room 0.01 Room Full 0.001 Room Full - 0.001 - 0.1 -1 - 0.1 -1 Room Full - 0.001 - 0.1 -1 - 0.1 -1 Drain On Capacitance Total Harmonic Distortione f = 1 MHz; VS = 0 V ns pF % Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current www.vishay.com 4 IGND V+ = + 5 V, V- = - 5 V VIN = 0 or 5 V 0.1 1 0.1 1 µA Document Number: 69904 S-72760-Rev. A, 04-Feb-08 New Product DG611A/DG612A/DG613A Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES V+ = + 5 V, V- = 0 V - 40 to 125 °C Test Conditions Unless Specified V+ = + 5 V, V- = 0 V Parameter Symbol VIN = 2.0 V, 0.8 Va Temp.b Typ.c - 40 to 85 °C Min.d Max.d Min.d Max.d Unit 0 5 0 5 V Analog Switch Analog Signal Rangee VANALOG Full rON V+ = + 5 V, V- = 0 V IS = 1 mA, VD = + 3.5 V Room Full 139 180 235 180 215 ΔrON V+ = + 5 V, V- = 0 V, IS = 1 mA, VD = + 3.5 V Room Full 1 6 10 6 9 rFLATNESS V+ = + 5 V, V- = 0 V, IS = 1 mA, VD = 0 V, + 3.5 V Room Full 56 80 120 80 110 V+ = 5.5 V, V- = 0 V VD = 4.5 V/1 V VS = 1 V/4.5 V Room Full ± 0.02 - 0.1 -2 0.1 2 - 0.1 - 0.25 0.1 0.25 Room Full ± 0.02 - 0.1 -2 0.1 2 - 0.1 - 0.25 0.1 0.25 ID(on) V+ = 5.5 V, V- = 0 V VD = VS = 1 V/4.5 V Room Full ± 0.02 - 0.1 -6 0.1 6 - 0.1 - 0.25 0.1 0.25 Input Current, VIN Low IIL VIN Under Test = 0.8 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Current, VIN High IIH VIN Under Test = 2.0 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Capacitancee CIN f = 1 MHz Room 2 Turn-On Timee tON Room Full 33 60 100 60 90 Turn-Off Timee tOFF RL = 300 Ω, CL = 35 pF VS = 3 V, see Figure 1 Room Full 16 35 50 35 45 Room Full 19 On-Resistance On-Resistance Match On-Resistance Flatness IS(off) Switch Off Leakage Current ID(off) Switch On Leakage Current Ω nA Digital Control µA pF Dynamic Characteristics tBBM DG613A only, VS = 3 V RL = 300 Ω, CL = 35 pF Injectione Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF e OIRR Break-Before-Makee Time Delay Charge Off Isolation Channel-to-Channel Crosstalke 3 dB Bandwidthe Source Off Capacitancee 2 Full 2.3 Room - 61 2 pC XTALK RL = 50 Ω, CL = 5 pF f = 10 MHz Room - 90 BW RL = 50 Ω, CL = 5 pF Room 675 Room 3 Room 5 Room 9 Room Full 0.001 Room Full - 0.001 - 0.1 -1 - 0.1 -1 Room Full - 0.001 - 0.1 -1 - 0.1 -1 CS(off) Drain Off Capacitance e CD(off) Drain On Capacitance e CD(on) f = 1 MHz; VS = 0 V f = 1 MHz; VS = VD = 0 V ns dB MHz pF Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current Document Number: 69904 S-72760-Rev. A, 04-Feb-08 IGND VIN = 0 or 5 V 0.1 1 0.1 1 µA www.vishay.com 5 New Product DG611A/DG612A/DG613A Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES Parameter V+ = + 3 V, V- = 0 V - 40 to 125 °C - 40 to 85 °C Test Conditions Unless Specified V+ = + 3 V, V- = 0 V VIN = 1.4 V, 0.6 Va Temp.b VANALOG Full rON IS = 1 mA, VD = + 1.5 V Room Full 195 IS(off) V+ = 3.3 V, V- = 0 V VD = 3 V/0.3 V VS = 0.3 V/3 V Room Full ± 0.02 - 0.1 -2 0.1 2 - 0.1 - 0.25 0.1 0.25 Room Full ± 0.02 - 0.1 -2 0.1 2 - 0.1 - 0.25 0.1 0.25 ID(on) V+ = 3.3 V, V- = 0 V VD = VS = 0.3 V/3 V Room Full ± 0.02 - 0.1 -6 0.1 6 - 0.1 - 0.25 0.1 0.25 Symbol Typ.c Min.d Max.d Min.d 3 0 Max.d Unit 3 V 235 280 Ω Analog Switch Analog Signal Rangee On-Resistance Switch Off Leakage Current ID(off) Switch On Leakage Current 0 235 300 nA Digital Control Input Current, VIN Low IIL VIN Under Test = 0.6 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Current, VIN High IIH VIN Under Test = 1.4 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Capacitancee CIN f = 1 MHz Room 2 Turn-On Time tON Room Full 87 125 180 125 170 Turn-Off Time tOFF RL = 300 Ω, CL = 35 pF VS = 2 V, see Figure 1 Room Full 33 55 65 55 60 Break-Before-Make Time Delay tBBM DG613 only, VS = 2 V RL = 300 Ω, CL = 35 pF Room Full 60 Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 2.3 Room - 60 Room - 90 µA pF Dynamic Characteristics Charge Injectione Off Isolation e OIRR Channel-to-Channel Crosstalke 3 dB Bandwidthe Source Off Capacitancee XTALK RL = 50 Ω, CL = 5 pF f = 10 MHz BW RL = 50 Ω, CL = 5 pF CS(off) Drain Off Capacitancee CD(off) e CD(on) Drain On Capacitance f = 1 MHz; VS = 0 V f = 1 MHz; VS = VD = 0 V 10 ns 10 pC dB Room 550 Room 5 MHz Room 6 Room 9 Room Full 0.001 Room Full - 0.001 - 0.1 -1 - 0.1 -1 Room Full - 0.001 - 0.1 -1 - 0.1 -1 pF Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND VIN = 0 or 3 V 0.1 1 0.1 1 µA Notes: a. VIN = input voltage to perform proper function. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 6 Document Number: 69904 S-72760-Rev. A, 04-Feb-08 New Product DG611A/DG612A/DG613A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 600 V+ = 2.7 V V± = ± 2.7 V V± = ± 5 V 500 rON - On-Resistance (Ω) rON - On-Resistance (Ω) 200 150 100 50 200 -4 -2 0 2 4 6 8 0 2 6 8 12 VCOM (VD ) - Analog Voltage (V) On-Resistance vs. VD (Single Supply) 200 180 180 160 160 140 120 + 125 °C + 85 °C 100 80 60 14 140 120 + 125 °C + 85 °C 100 80 60 40 + 25 °C - 40 °C 20 20 + 25 °C - 40 °C 0 -6 -4 -2 0 2 4 6 0 8 2 6 8 10 12 14 On-Resistance vs. Temperature (Single Supply) 10000 1000 1000 ID (on) 100 V+ = 6.2 V V- = - 6.2 V Leakage Current (pA) 10000 IS (off) 4 VCOM (VD) - Analog Voltage (V) VCOM (VD) - Analog Voltage (V) On-Resistance vs. Temperature (Dual Supply) ID (on) 100 IS (off) V+ = 13.2 V V- = 0 V 10 10 ID (off) ID (off) 1 - 40 10 On-Resistance vs. VD (Dual Supply) 40 Leakage Current (pA) 4 VCOM (VD) - Analog Voltage (V) 200 0 -8 V+ = 13.2 V V+ = 5 V 0 -6 rON - On-Resistance (Ω) rON - On-Resistance (Ω) V+ = 3 V 300 100 V± = ± 6.2 V 0 -8 400 - 20 0 20 40 60 80 100 Temperature (°C) Leakage Current vs. Temperature Document Number: 69904 S-72760-Rev. A, 04-Feb-08 120 1 - 40 - 20 0 20 40 60 80 100 120 Temperature (°C) Leakage Current vs. Temperature www.vishay.com 7 New Product DG611A/DG612A/DG613A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 45 2.5 CL = 1nF V+ = 3 V 40 t ON , tOFF - Switching Time (ns) Q - Charge Injection (pC) 2.0 V+ = 5 V 1.5 1.0 V± = ± 5 V 0.5 35 tON V± = ± 5 V 30 25 20 15 tOFF V± = ± 5 V 10 5 0.0 -6 -4 -2 0 2 Analog Voltage (V) 4 0 - 40 6 0 20 40 60 Temperature (°C) 80 100 120 Switching Time vs. Temperature (Dual Supply) Charge Injection vs. Analog Voltage 0 200 - 10 180 tON V+ = 3 V 160 140 120 100 tON V+ = 5 V 80 tOFF V+ = 5 V 60 Loss - 20 Loss, OIRR, X TALK (dB) t ON , tOFF - Switching Time (ns) - 20 tOFF V+ = 3 V 40 - 30 - 40 - 50 OIRR - 60 - 70 XTalk - 80 - 90 - 100 20 V+ = 5.0 V V- = - 5.0 V R L = 50 Ω - 110 0 - 40 - 20 0 20 40 60 80 Temperature (°C) 100 - 120 100K 120 Switching Time vs. Temperature (Single Supply) 1M 10M Frequency (Hz) 100M 1G Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 10 mA 3.0 - 40 °C to + 125 °C 1 mA 100 µA 2.0 Supply Current VIN - Switching Threshold (V) 2.5 1.5 10 µA 1 µA I100 nA IGND 10 nA 1.0 1 nA V+ = 5 V V- = - 5 V I+ 0.5 100 pA 10 pA 0.0 0 2 4 6 8 10 V+ Supply Voltage (V) 12 Switching Threshold vs. Supply Voltage www.vishay.com 8 14 10 100 1K 10K 100K 1M 10M Switching Frequency (Hz) Supply Current vs. Switching Frequency Document Number: 69904 S-72760-Rev. A, 04-Feb-08 New Product DG611A/DG612A/DG613A Vishay Siliconix TEST CIRCUITS +5V tr < 5 ns tf < 5 ns 3V Logic Input 50 % 0V V+ VS S tOFF D Switch Input* VO VS VO IN V- GND CL 35 pF RL 300 Ω 90 % 90 % 0V tON - 5V Note: CL (includes fixture and stray capacitance) Logic input waveform is inverted for switches that have the opposite logic sense control RL VO = V S RL + rDS(on) Figure 1. Switching Time +5V 3V Logic Input 50 % V+ VS1 S1 D1 VO1 IN1 VS2 Switch Output IN2 RL1 300 Ω V- GND 90 % VO2 D2 S2 0V VS1 VO1 RL2 300 Ω CL2 35 pF 0V VS2 VO2 CL1 35 pF 0V Switch Output 90 % tD tD -5V CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make (DG613A) ΔVO +5V Rg INX V+ S ON OFF VO CL 1 nF 3V GND OFF D IN Vg VO V- INX OFF ON Q = ΔVO x CL OFF -5V Figure 3. Charge Injection Document Number: 69904 S-72760-Rev. A, 04-Feb-08 www.vishay.com 9 New Product DG611A/DG612A/DG613A Vishay Siliconix TEST CIRCUITS +5V C V+ D1 S1 VS Rg = 50 Ω 50 Ω IN1 0 V, 2.4 V S2 D2 VO NC 0 V, 2.4 V RL IN2 GND XTALK Isolation = 20 log V- C VO -5V VS C = RF bypass Figure 4. Crosstalk +5V +5V C V+ S VS C VO D V+ Rg = 50 Ω 0 V, 2.4 V S RL 50 Ω IN GND V- Meter IN C HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D -5V Off Isolation = 20 log GND V- C VO VS C = RF Bypass Figure 5. Off-Isolation -5V Figure 6. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69904. www.vishay.com 10 Document Number: 69904 S-72760-Rev. A, 04-Feb-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1