INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2690 DESCRIPTION ·High voltage and high fT ·Complementary to 2SA1220 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2690 is general purpose transistors designed For use in audio and radio frequency power amplifiers. ·Suitable for use in driver stage of 50 to 100W audio Amplifiers and output stage of TV vertical deflection circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.2 A PC Collector Power Dissipation @ Tc=25℃ 20 W TJ Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ Tstg isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2690 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 200mA 0.7 V VBE(sat) Base-Emitter Saturation Voltage IC=1A; IB= 200mA 1.3 V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1 μA hFE-1 DC Current Gain IC= 5mA ; VCE= 5V 35 hFE-2 DC Current Gain IC= 0.3A ; VCE= 5V 60 320 hFE-2 Classifications R Q P 60-120 100-200 160-320 isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark