Ordering number : ENA1532B CPH6445 N-Channel Power MOSFET http://onsemi.com 60V, 3.5A, 117mΩ, Single CPH6 Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 Gate-to-Source Voltage VGSS ±20 V V Drain Current (DC) ID 3.5 A Drain Current (Pulse) IDP PW≤10ms, duty cycle≤1% 14 A Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. ZX 0.05 1.6 0.2 0.6 2.8 0.2 0.6 6 CPH6445-TL-E CPH6445-TL-W 0.15 2.9 TL 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 CPH6 3 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 32514HK TC-00002973/61312TKIM/21710TKIM PE No. A1532-1/5 CPH6445 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS Cutoff Voltage Forward Transfer Admittance VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)2 Input Capacitance RDS(on)1 RDS(on)3 Conditions ID=1mA, VGS=0V Ratings min typ Unit max 60 V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=1.5A 1.2 ID=1.5A, VGS=10V ID=0.7A, VGS=4.5V ID=0.7A, VGS=4V Ciss 1 mA ±10 mA 2.6 2.0 V S 92 117 120 168 132 185 mW mW mW 310 pF 40 pF Output Capacitance Coss Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time td(on) 6.0 ns Rise Time tr 5.5 ns Turn-OFF Delay Time td(off) 27 ns Fall Time tf 13 ns Total Gate Charge Qg 6.8 nC 1.1 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=3.5A 1.4 IS=3.5A, VGS=0V 0.85 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 10V 0V VDD=30V VIN ID=1.5A RL=20Ω VOUT VIN D PW=10ms D.C.≤1% G P.G 50Ω CPH6445 S Ordering Information Device CPH6445-TL-E CPH6445-TL-W Package CPH6 Shipping 3,000pcs./reel memo Pb-Free Pb-Free and Halogen Free No. A1532-2/5 CPH6445 ID -- VDS 4.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=0.7A 270 1.5A 240 210 180 150 120 90 60 30 0 2 4 6 8 10 12 14 C 5° = Ta 0.1 7 5 75 --2 °C 25 °C 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 5 7 10 IT14870 Ciss, Coss, Crss -- pF 10 5 tr 60 30 --40 --20 0 20 40 60 80 100 120 140 160 IT14869 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14871 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 100 7 5 Coss 3 Crss 2 3 2 0.1 90 5 tf td(on) 120 7 2 7 150 1000 td(off) 3 4.0 IT14867 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V 5 3.5 7A =0. , ID V 4 = A 0.7 V GS I D= , V 5 A =4. =1.5 V GS V, I D 0 1 = VGS 180 0.01 7 5 3 2 0.001 3 2 0.01 7 0.001 2 3 3.0 210 10 7 5 3 2 VDS=10V 3 2 2.5 Ambient Temperature, Ta -- °C 3 2 1.0 7 5 2.0 240 IT14868 | yfs | -- ID 1.5 RDS(on) -- Ta 0 --60 16 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 7 5 1.0 260 330 300 0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 360 0 IT14866 RDS(on) -- VGS 390 0 1.0 Ta=7 5°C 25°C 0 --25 0.5 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 1.5 1.0 0.2 0 2.0 25° C 0.4 2.5 °C VGS= 2.5V 0.6 3.0 Ta =7 5° C 0.8 3.5 --25°C 1.0 VDS=10V 4.5 Drain Current, ID -- A 1.2 V 3.0 4 .0 V Drain Current, ID -- A 1.4 ID -- VGS 5.0 4.5V 15.0V 10.0V 8.0V 1.6 3.5 V 1.8 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT14872 10 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14873 No. A1532-3/5 CPH6445 VGS -- Qg 10 VDS=30V ID=3.5A 9 10 7 5 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 7 6 5 4 3 1 3 2 1 3 2 4 5 Total Gate Charge, Qg -- nC 7 IT14874 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 6 DC 10 op 0m era Operation in this area is limited by RDS(on). 3 2 10 ms 0m 1m s s 10 ms 10 ID=3.5A 1.0 7 5 2 0 IDP=14A (PW≤10ms) 3 2 0.1 7 5 0 ASO tio n( s Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT14875 When mounted on ceramic substrate (1200mm2×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14876 No. A1532-4/5 CPH6445 Outline Drawing CPH6445-TL-E, CPH6445-TL-W Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 Note on usage : Since the CPH6445 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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