FIDELIX CMP0417AA8-F70I 256k x 16 bit super low power and low voltage full cmos ram Datasheet

CMP0417AA8-I
CMOS LPRAM
Document Title
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
Revision History
Revision
No.
History
Draft date
Remark
0.0
Initial Draft
May. 2nd, 2004
Final
0.1
Added G(Pb-Free) and H(Pb-Free & Halogen Free) descriptions
Oct. 26th, 2005
Final
0.2
Removed 60ns descriptions
Aug. 22nd, 2006
Final
0.3
Added Power Up Sequence
Sep. 6th, 2006
Final
1
Revision 0.3
Sep. 2006
CMP0417AA8-I
CMOS LPRAM
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FEATURES
• Process Technology : Full CMOS
• Organization : 256K x 16
• Power Supply Voltage : 2.7~3.3V
• Three state output and TTL Compatible
• Package Type : 48-FBGA-6.00x8.00 mm2
• Separated I/O power(VCCQ) & Core Power(VCC)
• Automatic power-down when deselected
PRODUCT FAMILY
Operating
Temperature
Product Family
Power Dissipation
Operating
Voltage (V)
ICC2
f = 1MHz
f = fmax
Speed
Min. Typ. Max.
Industrial
(-40~85’C)
CMP0417AA8-F70I
ICC1
2.7
3.0
3.3
70ns
ISB1
(CMOS Standby
Current)
Typ.
Max.
Typ.
Max.
Typ.
Max.
1.5mA
3mA
12mA
20mA
30uA
70uA
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C.
2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
PIN DESCRIPTION
1
2
3
4
5
6
A
/LB
/OE
A0
A1
A2
NC
B
I/O9
/UB
A3
A4
/CS
I/O1
C
I/O10
I/O11
A5
A6
I/O2
I/O3
D
VSS
I/O12
A17
A7
I/O4
VCC
E
VCCQ
I/O13
DNU
A16
I/O5
VSS
F
I/O15
I/O14
A14
A15
I/O6
I/O7
G
I/O16
NC
A12
A13
/WE
I/O8
H
NC
A8
A9
A10
A11
NC
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
VCC
VSS
Row
Addresses
I/O1~I/O8
Function
Name
Function
/CS
Chip Select Input
VCC
Core Power
I/O Power
Output Enable Input
VCCQ
Write Enable Input
VSS
Ground
A0~A17
Address Inputs
/UB
Upper Byte(I/O9~16)
I/O1~I/O16
Data Inputs/Outputs
/LB
Lower Byte(I/O 1~8)
/WE
Do Not Use
/UB
DNU
I/O Circuit
Column select
Column Addresses
/OE
No Connection
Data
cont
Memory array
Data
cont
/WE
NC
Row
select
Data
cont
I/O9~I/O16
48-FBGA : Top View(Ball Down)
Name
Precharge circuit.
/CS1
/OE
Control Logic
/LB
2
Revision 0.3
Sep. 2006
CMP0417AA8-I
CMOS LPRAM
PRODUCT LIST
Industrial Temperature Products(-40~85’C)
Part Name
Function
CMP0417AA8-F70I
48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER
FUNCTIONAL DESCRIPTION
/CS1
/OE
/WE
/LB
/UB
I/O1-8
I/O9-16
Mode
Power
H
X1)
X1)
X1)
X1)
High-Z
High-Z
Deselect/Power-down
Standby
X1)
X1)
X1)
H
H
High-Z
High-Z
Deselect/Power-down
Standby
H
H
L
X1)
High-Z
High-Z
Output Disabled
Active
H
H
X1)
L
High-Z
High-Z
Output Disabled
Active
L
H
Dout
High-Z
Lower Byte Read
Active
H
L
High-Z
Dout
Upper Byte Read
Active
L
L
H
L
X1)
L
L
L
Dout
Dout
Word Read
Active
L
H
Din
High-Z
Lower Byte Write
Active
H
L
High-Z
Din
Upper Byte Write
Active
L
L
Din
Din
Word Write
Active
Unit
1. X means don’t care.(Must be low or high state)
ABSOLUTE MAXIMUM RATINGS1)
Item
Voltage on any pin relative to Vss
Symbol
Ratings
VIN, VOUT
-0.2 to Vcc+0.3V
V
Vcc
-0.2 to 3.6
V
Voltage on Vcc supply relative to Vss
PD
1.0
W
TSTG
-65 to 150
’C
TA
-40 to 85
’C
Power Dissipation
Storage temperature
Operating Temperature
1. Str es s e s g r e ate r tha n th o s e l i st e d u n d er “ A bsolute Maxim um Ratings” may cause permanent dam age to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for Industrial periods
may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS1)
Item
Symbol
I/O operating voltage (VCCQ ≤ VCC)
Ground
CMP0417AA8
Max
VCC
2.7
3.3
2.7
3.3
2.7
3.3
V
VCCQ
2.7
3.3
2.25
2.75
1.65
1.95
V
VSS
0
0
0
0
0
0
V
Input high voltage
VIH
0.8VCCQ
VCC+0.22)
0.8VCCQ
VCC+0.22)
0.8VCCQ
VCC+0.22)
V
Input low voltage
VIL
-0.23)
0.2VCCQ
-0.23)
0.2VCCQ
-0.23)
0.2VCCQ
V
Supply voltage
Min
Max
Min
Max
Unit
Min
Note :
1.TA=-40 to 85’C, otherwise specified.
2. Overshoot : Vcc+1.0V in case of pulse width≤20ns.
3. Undershoot : -1.0V in case of pulse width≤20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
3
Revision 0.3
Sep. 2006
CMP0417AA8-I
CMOS LPRAM
CAPACITANCE1) (f=1MHz , TA=25’C)
Symbol
Test Condition
Min
Max
Input capacitance
Item
CIN
VIN=0V
-
8
Unit
pF
Input/Output capacitance
CIO
VIO=0V
-
8
pF
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Min
Typ
Max
Unit
Input leakage current
Item
Symbol
ILI
VIN=VSS to VCC
-1
-
1
uA
Output leakage current
ILO
/CS=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC
-1
-
1
uA
ICC1
Cycle time=1us, 100%duty, IIO=0mA, /CS≤0.2V,
VIN≤0.2V or VIN≥VCC-0.2V
-
-
3
mA
ICC2
Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL,
VIN=VIL or VIH
-
-
25
mA
Output low voltage
VOL
IOL=0.5mA
0.2VCCQ
V
Output high voltage
VOH
IOH=-0.5mA
Standby Current(TTL)
ISB
/CS=VIH, Other inputs=VIH or VIL
-
-
0.3
mA
Standby Current(CMOS)
ISB1
/CS≥VCC-0.2V, Other inputs=0~VCC
-
-
70
uA
Average operating current
Test Conditions
0.8VCCQ
4
V
Revision 0.3
Sep. 2006
CMP0417AA8-I
CMOS LPRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
1TTL
30pf
Input pulse level : 0.2 to VCC-0.2V
Input rising and falling time : 5ns
Input and output reference voltage : 0.5*VCCQ
Output load(see right) : CL=30pF+1TTL
AC CHARACTERISTICS(VCC=2.7V~3.3V, Industrial product : TA=-40 to 85’C)
Parameter List
Read Cycle Time
Read
tRC
Units
Min
Max
70
-
ns
ns
Address Access Time
tAA
-
70
Chip Select to Output
tCO
-
70
ns
Output Enable to Valid Output
tOE
-
25
ns
/UB, /LB Access Time
tBA
-
70
ns
ns
tLZ
10
-
/UB, /LB Enable to Low-Z Output
Chip Select to Low-Z Output
tBLZ
10
-
ns
Output Enable to Low-Z Output
tOLZ
5
-
ns
Chip Disable to High- Z Output
Write
70ns
Symbol
tHZ
0
5
ns
/UB, /LB Disable to High- Z Output
tBHZ
0
5
ns
Output Disable to High- Z Output
tOHZ
0
5
ns
Output Hold from Address Change
tOH
5
-
ns
Write Cycle Time
tWC
70
-
ns
Chip Select to End of Write
tCW
60
-
ns
Address Set-up Time
tAS
0
-
ns
Address Valid to End of Write
tAW
60
-
ns
/UB, /LB Valid to End of Write
tBW
60
-
ns
Write Pulse Width
tWP
50
-
ns
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
tWR
0
-
ns
tWHZ
0
5
ns
tDW
20
-
ns
Data Hold from Write Time
tDH
0
-
ns
End Write to Output Low-Z
tOW
5
-
ns
/CS High Pulse Width1)
tCP
10
-
ns
1. /CS High Pulse Width is defined by /CS or (/UB and /LB) because /UB & /LB can make standby mode when /UB=High and /LB=High.
5
Revision 0.3
Sep. 2006
CMP0417AA8-I
CMOS LPRAM
Power Up Sequence
1. Apply Power
2. Maintain stable power for a minimum of 200us with /CS=VIH
Standby Mode State machines
Power On
/CS=VIH
Wait
min.200us
Initial State
/CS=VIL,
/UB or/and /LB=VIL
Active
Mode
/CS=VIlL
/CS=VIH
(or/and /UB=/LB=VIH)
Standby Mode
Standby Mode Characteristics
Mode
Memory Cell Data
Standby Current(uA)
Wait Time(us)
Standby
Valid
70 (ISB1)
0
6
Revision 0.3
Sep. 2006
CMP0417AA8-I
READ CYCLE (1)
CMOS LPRAM
(Address controlled,/CS=/OE=VIL, /WE=VIH, /UB or/and /LB=VIL)
tRC
Address
tOH
Data Out
READ CYCLE (2)
tAA
Previous Data Valid
Data Valid
(/WE=VIH)
tRC
Address
tOH
tAA
tCO
/CS
tHZ
tBA
/UB, /LB
tBHZ
tOE
/OE
tOLZ
Data Out
High-Z
tOHZ
tBLZ
tLZ
Data Valid
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced
to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device
to device interconnection.
7
Revision 0.3
Sep. 2006
CMP0417AA8-I
WRITE CYCLE (1)
CMOS LPRAM
(/WE controlled)
tWC
Address
tCW(2)
tWR(4)
/CS
tAW
tBW
/UB, /LB
tWP(1)
/WE
tAS(3)
tDW
Data in
tWHZ
Data Out
WRITE CYCLE (2)
tDH
Data Valid
High-Z
High-Z
tOW
Data Undefined
(/CS controlled, /WE=VIH)
tWC
Address
tAS(3)
tWR(4)
tCW(2)
/CS
tAW
tBW
/UB, /LB
tWP(1)
/WE
tDW
Data in
Data Out
WRITE CYCLE (3)
tDH
Data Valid
High-Z
High-Z
(/UB, /LB controlled)
tWC
Address
tWR(4)
tCW(2)
/CS
tAW
tBW
/UB, /LB
tAS(3)
tWP(1)
/WE
tDW
Data in
Data Out
tDH
Data Valid
High-Z
High-Z
1. A write occurs during the overlap (tWP) of low /CS and /WE. A write begins when /CS goes low and /WE goes low with
asserting /UB or /LB for single byte operation or simultaneously asserting /UB and /LB for double byte operation. A write
ends at the earliest transition when /CS goes high and WE goes high. The tWP is measured from the beginning of write to
the end of write.
2. tCW is measured from the /CS going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CS or /WE going high.
8
Revision 0.3
Sep. 2006
CMP0417AA8-I
CMOS LPRAM
PACKAGE DIMENSION
Unit : millimeters
48 BALL FINE PITCH BGA(0.75mm ball pitch)
Top View
Bottom View
B
A1 INDEX MARK
B1
B
0.05
0.05
6
5
4
3
2
1
A
B
C
#A1
C
C
C1
D
C1/2
E
F
G
H
B/2
0.25/Typ.
E2
D
A
Y
0.85/Typ.
E
Detail A
E1
0.30
Side View
C
-
Min
Typ
A
-
0.75
Max
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
7.90
8.00
8.10
C1
-
5.25
-
D
0.30
0.35
0.40
E
-
1.00
-
E1
-
0.75
-
E2
0.20
0.25
0.30
Y
-
-
0.08
9
NOTES.
1. Bump counts : 48(8row x 6column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerance are +/-0.050 unless
otherwise specified.
4. Typ : Typical
5. Y is coplanarity : 0.08(Max)
Revision 0.3
Sep. 2006
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