SUNMATE BZD27C100P Surface mount silicon zener diode Datasheet

BZD27C3V6P - BZD27C200P
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE RANGE: 3.6 - 200V
POWER: 0.15Wa t t s
Features
!
!
!
!
!
Sillicon planar zener diodes.
Low profile surface-mount package.
Zener and surge current specification
Low leakage current
Excellent stability
High temperature soldering guaranteed:
B
265℃/10 seconds, at terminals
C
E
SOD-123FL
Dim Min Max Typ
A 3.58 3.72 3.65
3
B 2.72 2.78 2.75
C 1.77 1.83 1.80
D
1
1.02
1.08 1.05
E 0.097 1.03 1.00
H 0.13 0.17 0.15
L
0.53 0.57 0.55
All Dimensions in mm
Mechanical Data
! Case: SOD-123FL
plastic body over passivated junction
! Terminals : Plated axial leads,
! solderable per MIL-STD-750, Method 2026
D
H
L
! Polarity : Color band denotes cathode end
! Mounting Position : Any
E
! Weight:0.0007 ounce, 0.02 grams
A
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
PPPM
0.15
Watts
Power dissipation at T A=25℃ (NOTE 2)
Ptot
0.8
Watts
Maximum instantaneous forward voltage at 0.2A
VF
1.2
Volts
Thermal resistance junction to ambient
RθJA
180
K/W
Operating temperature junction range
TJ
- 55 to +150
℃
TSTG
- 55 to +150
℃
Characteristic
Non-repetitive peak pulse power dissipation
with a 10/1000µs waveform (NOTE 1)
Storage temperature range
NOTES:(1)TJ =25℃ prior to surge.
(2)Mounted on epoxy-glass PCB with 3×3 mm Cu
µ pads( ≥ 40m thick)
(3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000 µs pulse)
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(NOTE 1)
Differential
resistance
Temperature
coefficient
Vz@IzT
rdif@Iz
αz@Iz
Test
current
IZT
V
Ω
%/℃
mA
Working voltage
Type
Reverse current at
reverse voltage
IR
VR
µA
V
min
max
typ
max
min
max
max
BZD27C3V6P
3.4
3.8
4
8
-0.14
-0.04
100
100
1
BZD27C3V9P
3.7
4.1
4
8
-0.14
-0.04
100
50
1
BZD27C4V3P
4
4.6
4
7
-0.12
-0.02
100
25
1
BZD27C4V7P
4.4
5
3
7
-0.1
0
100
10
1
BZD27C5V1P
4.8
5.4
3
6
-0.08
0.02
100
5
1
BZD27C5V6P
5.2
6
2
4
-0.04
0.04
100
10
2
BZD27C6V2P
5.8
6.6
2
3
-0.01
0.06
100
5
2
BZD27C6V8P
6.4
7.2
1
3
0
0.07
100
10
3
BZD27C7V5P
7
7.9
1
2
0
0.07
100
50
3
BZD27C8V2P
7.7
8.7
1
2
0.03
0.08
100
10
3
BZD27C9V1P
8.5
9.6
2
4
0.03
0.08
50
10
5
BZD27C10P
9.4
10.6
2
4
0.05
0.09
50
7
7.5
BZD27C11P
10.4
11.6
4
7
0.05
0.1
50
4.0
8.2
BZD27C12P
11.4
12.7
4
7
0.05
0.1
50
3.0
9.1
BZD27C13P
12.4
14.1
5
10
0.05
0.1
50
2
10
BZD27C15P
13.8
15.6
5
10
0.05
0.1
50
1
11
BZD27C16P
15.3
17.1
6
15
0.06
0.11
25
1
12
BZD27C18P
16.8
19.1
6
15
0.06
0.11
25
1
13
BZD27C20P
18.8
21.2
6
15
0.06
0.11
25
1
15
BZD27C22P
20.8
23.3
6
15
0.06
0.11
25
1
16
BZD27C24P
22.8
25.6
7
15
0.06
0.11
25
1
18
BZD27C27P
25.1
28.9
7
15
0.06
0.11
25
1
20
BZD27C30P
28
32
8
15
0.06
0.11
25
1
22
BZD27C33P
31
35
8
15
0.06
0.11
25
1
24
BZD27C36P
34
38
21
40
0.06
0.11
10
1
27
BZD27C39P
37
41
21
40
0.06
0.11
10
1
30
BZD27C43P
40
46
24
45
0.07
0.12
10
1
33
BZD27C47P
44
50
24
45
0.07
0.12
10
1
36
BZD27C51P
48
54
25
60
0.07
0.12
10
1
39
BZD27C56P
52
60
25
60
0.07
0.12
10
1
43
BZD27C62P
58
66
25
80
0.08
0.13
10
1
47
BZD27C68P
64
72
25
80
0.08
0.13
10
1
51
BZD27C75P
70
79
30
100
0.08
0.13
10
1
56
BZD27C82P
77
87
30
100
0.08
0.13
10
1
62
BZD27C91P
85
96
60
200
0.08
0.13
5
1
68
BZD27C100P
94
106
60
200
0.09
0.13
5
1
75
BZD27C110P
104
116
80
250
0.09
0.13
5
1
82
BZD27C120P
114
127
80
250
0.09
0.13
5
1
91
BZD27C130P
124
141
110
300
0.09
0.13
5
1
100
BZD27C150P
138
156
130
300
0.09
0.13
5
1
110
BZD27C160P
153
171
150
350
0.09
0.13
5
1
120
BZD27C180P
168
191
180
400
0.09
0.13
5
1
130
BZD27C200P
188
212
200
500
0.09
0.13
5
1
150
Note:1.Pulse test:tp≤5ms.
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Figure 2. Maximum Pulse Power Dissipation vs. Zener Voltage
Figure 1. Forward Current vs. Forward Voltage
10.00
160
Typ. VF
PRSM–Max. Pulse Power Dissipation ( W )
I F – Forward Current ( A )
140
Max. VF
1.00
0.10
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
120
100
80
60
40
20
0
0
25
VF – Forward Voltage ( V )
75 100 125 150 175 200
V Znom – Zener Voltage ( V )
Figure 3. Typ. Diode Capacitance vs. Reverse Voltage
Figure 4. Non-Repetitive Peak Reverse Current Pulse Definition
10000
C5V1P
C6V8P
C12P
IRSM
(%)
100
90
C18P
1000
t1 = 10 µs
t2 = 1000 µ s
50
100
C27P
C51P
10
C200P
10
0.0
0.5
1.0
1.5
2.0
2.5
VR – Reverse Voltage (V)
t
t1
3.0
t2
Figure 5. Power Dissipation vs. Ambient Temperature
3.0
Ptot –Power Dissipation ( W )
C D – Typ. Junction Capacitance ( pF )
50
tie point temperature
2.5
2.0
1.5
ambient temperature
1.0
0.5
0.0
0
25
50
75
100
125
150
Tamb – Ambient Temperature ( qC )
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