BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 3 — 5 August 2013 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 150 mA; in a class-AB production test circuit. Test signal pulsed RF f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 1.2 to 1.4 50 500 17 50 20 6 1.2 Features and benefits Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (1.2 GHz to 1.4 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLL6H1214-500 (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 1 1 2 5 3 3 4 5 4 [1] source 2 sym117 BLL6H1214LS-500 (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source 1 2 1 5 3 3 4 5 4 [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLL6H1214-500 - flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A BLL6H1214LS-500 - earless flanged balanced ceramic package; 4 leads SOT539B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLL6H1214-500_1214LS-500 Product data sheet Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 100 V VGS gate-source voltage 0.5 +13 V Tstg storage temperature 65 +150 C Tj junction temperature - 200 C All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 2 of 21 NXP Semiconductors BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor 5. Thermal characteristics Table 5. Symbol Thermal characteristics Parameter Conditions Typ Unit BLL6H1214-500 Zth(j-c) Tcase = 85 C; PL = 500 W transient thermal impedance from junction to case tp = 100 s; = 10 % 0.07 K/W tp = 200 s; = 10 % 0.08 K/W tp = 300 s; = 10 % 0.1 K/W tp = 100 s; = 20 % 0.1 K/W BLL6H1214LS-500 Zth(j-c) Tcase = 85 C; PL = 500 W transient thermal impedance from junction to case tp = 100 s; = 10 % 0.046 K/W tp = 200 s; = 10 % 0.059 K/W tp = 300 s; = 10 % 0.069 K/W tp = 100 s; = 20 % 0.064 K/W 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA Min Typ Max Unit 100 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.3 1.8 2.2 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 32 42 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 270 mA 1.7 3 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.5 A - 100 164 m Table 7. RF characteristics Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 150 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. BLL6H1214-500_1214LS-500 Product data sheet Symbol Parameter PL output power Conditions VDS drain-source voltage Gp Min Typ Max Unit 500 - - W PL = 500 W - - 50 V power gain PL = 500 W 15 17 - dB RLin input return loss PL = 500 W - 10 - dB PL(1dB) output power at 1 dB gain compression - 600 - W D drain efficiency 45 50 - % All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 PL = 500 W © NXP B.V. 2013. All rights reserved. 3 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor Table 7. RF characteristics …continued Test signal: pulsed RF; tp = 300 s; = 10 %; RF performance at VDS = 50 V; IDq = 150 mA; Tcase = 25 C; unless otherwise specified, in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Pdroop(pulse) pulse droop power PL = 500 W - 0 0.3 dB tr rise time PL = 500 W - 20 50 ns tf fall time PL = 500 W - 6 50 ns 7. Test information 7.1 Ruggedness in class-AB operation The BLL6H1214-500 and BLL6H1214LS-500 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 150 mA; PL = 500 W; tp = 300 s; = 10 %. 7.2 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f ZS ZL (GHz) () () 1.2 1.268 j2.623 2.987 j1.664 1.3 2.193 j2.457 2.162 j1.326 1.4 2.359 j2.052 1.604 j1.887 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Test circuit Table 9. List of components For test circuit see Figure 2. Component BLL6H1214-500_1214LS-500 Product data sheet Description Value Remarks C1 multilayer ceramic chip capacitor 22 F, 35 V C2 multilayer ceramic chip capacitor 51 pF [1] C3, C4 multilayer ceramic chip capacitor 100 pF [1] C5, C11, C12 multilayer ceramic chip capacitor 1 nf [2] C6 multilayer ceramic chip capacitor 47 pF [1] C7, C8, C10 multilayer ceramic chip capacitor 51 pF [3] All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 4 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor Table 9. List of components …continued For test circuit see Figure 2. Component Description Value Remarks [3] C9 multilayer ceramic chip capacitor 100 pF C13 electrolytic capacitor 10 F, 63 V R1 SMD resistor 56 R2 metal film resistor 51 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 800B or capacitor of same quality. 0603 C12 C10 C1 C3 C2 C4 C5 C8 C9 C11 C13 R1 R2 C6 C7 001aaj490 Printed-Circuit Board (PCB): Duroid 6006; r = 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 m. See Table 9 for a list of components. Fig 2. Component layout for class-AB production test circuit BLL6H1214-500_1214LS-500 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 5 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 7.4 RF performance graphs 7.4.1 Performance curves measured with = 10 %, tp = 300 s and Th = 25 C DDD 3/ : DDD *S G% 3L : VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Output power as a function of input power; typical values Fig 4. DDD Ș' 3/ : VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz Fig 3. Power gain as a function of output power; typical values DDD *S G% Ș' Ș' *S 3/ : VDS = 50 V; IDq = 150 mA. I 0+] VDS = 50 V; PL = 500 W; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 5. Drain efficiency as a function of output power; typical values BLL6H1214-500_1214LS-500 Product data sheet Fig 6. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 6 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor DDD 5/LQ G% I 0+] VDS = 50 V; PL = 500 W; IDq = 150 mA. Fig 7. Input return loss as a function of frequency; typical value 7.4.2 Performance curves measured with = 10 %, tp = 300 s and Th = 65 C DDD 3/ : DDD *S G% 3L : VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Output power as a function of input power; typical values BLL6H1214-500_1214LS-500 Product data sheet 3/ : VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz Fig 8. Fig 9. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 7 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor DDD Ș' DDD Ș' *S G% Ș' *S 3/ : VDS = 50 V; IDq = 100 mA. I 0+] VDS = 50 V; PL = 500 W; IDq = 100 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 10. Drain efficiency as a function of output power; typical values Fig 11. Power gain and drain efficiency as function of frequency; typical values 7.4.3 Performance curves measured with = 10 %, tp = 300 s and f = 1300 MHz 001aal688 700 PL (W) 001aal689 20 Gp (dB) 600 18 (1) 500 (2) (3) 16 400 (1) (2) (3) 300 14 200 12 100 10 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (2) Th = 25 C (2) Th = 25 C (3) Th = 65C (3) Th = 65C Fig 12. Output power as a function of input power; typical values Product data sheet 600 700 PL (W) VDS = 50 V;IDq = 150 mA. (1) Th = 40 C BLL6H1214-500_1214LS-500 500 Fig 13. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 8 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 001aal690 60 (1) (2) ηD (%) (3) 40 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V;IDq = 150 mA. (1) Th = 40 C (2) Th = 25 C (3) Th = 65C Fig 14. Drain efficiency as a function of output power; typical values 7.4.4 Performance curves measured with = 20 %, tp = 500 s and Th = 25 C 001aal691 700 PL (W) 001aal692 20 Gp (dB) 600 16 (1) 500 (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 15. Output power as a function of input power; typical values Product data sheet 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz BLL6H1214-500_1214LS-500 500 Fig 16. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 9 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 001aal693 60 Gp (dB) (1) ηD (%) 001aal694 20 45 Gp (3) 40 ηD (%) ηD 18 (2) 55 16 35 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 17. Drain efficiency as a function of output power; typical values Fig 18. Power gain and drain efficiency as function of frequency; typical values 7.4.5 Performance curves measured with = 20 %, tp = 500 s and Th = 65 C 001aal695 700 PL (W) 001aal696 20 Gp (dB) 600 18 (1) 500 (2) 16 (3) 400 (1) (2) 300 (3) 14 200 12 100 10 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 19. Output power as a function of input power; typical values Product data sheet 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz BLL6H1214-500_1214LS-500 500 Fig 20. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 10 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 001aal697 60 001aal698 20 Gp (dB) ηD (%) 55 ηD (%) 18 ηD 45 16 Gp 35 (1) 40 (3) (2) 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 21. Drain efficiency as a function of output power; typical values Fig 22. Power gain and drain efficiency as function of frequency; typical values 7.4.6 Performance curves measured with = 20 %, tp = 500 s and f = 1300 MHz 001aal699 700 PL (W) 001aal700 20 Gp (dB) 600 16 (1) (1) 500 (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (2) Th = 25 C (2) Th = 25 C (3) Th = 65C (3) Th = 65C Fig 23. Output power as a function of input power; typical values Product data sheet 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C BLL6H1214-500_1214LS-500 500 Fig 24. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 11 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 001aal701 60 ηD (%) (1) (2) 40 (3) 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (2) Th = 25 C (3) Th = 65C Fig 25. Drain efficiency as a function of output power; typical values 7.4.7 Performance curves measured with = 10 %, tp = 1 ms and Th = 25 C 001aal702 700 PL (W) 001aal703 20 Gp (dB) 600 16 (1) 500 (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 26. Output power as a function of input power; typical values Product data sheet 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz BLL6H1214-500_1214LS-500 500 Fig 27. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 12 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 001aal704 60 (1) ηD (%) 001aal705 20 Gp (dB) (2) 55 ηD (%) ηD 45 18 Gp (3) 40 16 35 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 28. Drain efficiency as a function of output power; typical values Fig 29. Power gain and drain efficiency as function of frequency; typical values 7.4.8 Performance curves measured with = 10 %, tp = 1 ms and Th = 65 C 001aal706 700 PL (W) 001aal707 20 Gp (dB) 600 16 500 (1) (1) (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (2) f = 1300 MHz (3) f = 1400 MHz (3) f = 1400 MHz Fig 30. Output power as a function of input power; typical values Product data sheet 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz BLL6H1214-500_1214LS-500 500 Fig 31. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 13 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 001aal708 60 001aal709 20 Gp (dB) ηD (%) (1) 55 ηD (%) ηD 45 18 (2) 40 Gp 16 35 (3) 14 25 12 15 20 0 0 100 200 300 400 500 600 700 PL (W) 10 1.15 1.25 5 1.45 1.35 f (GHz) VDS = 50 V; IDq = 150 mA. VDS = 50 V; IDq = 150 mA. (1) f = 1200 MHz (2) f = 1300 MHz (3) f = 1400 MHz Fig 32. Drain efficiency as a function of output power; typical values Fig 33. Power gain and drain efficiency as function of frequency; typical values 7.4.9 Performance curves measured with = 10 %, tp = 1 ms and f = 1300 MHz 001aal710 700 PL (W) 001aal711 20 Gp (dB) 600 16 (1) (1) 500 (2) (2) (3) (3) 12 400 300 8 200 4 100 0 0 0 5 10 15 20 25 0 100 200 300 400 Pi (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (2) Th = 25 C (2) Th = 25 C (3) Th = 65C (3) Th = 65C Fig 34. Output power as a function of input power; typical values Product data sheet 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C BLL6H1214-500_1214LS-500 500 Fig 35. Power gain as a function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 14 of 21 NXP Semiconductors BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor 001aal712 60 (1) ηD (%) (2) (3) 40 20 0 0 100 200 300 400 500 600 700 PL (W) VDS = 50 V; IDq = 150 mA. (1) Th = 40 C (2) Th = 25 C (3) Th = 65C Fig 36. Drain efficiency as a function of output power; typical values BLL6H1214-500_1214LS-500 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 15 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor 8. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A mm 4.7 4.2 inches b c D D1 e E E1 11.81 0.18 31.55 31.52 9.50 13.72 11.56 0.10 30.94 30.96 9.30 9.53 9.27 F H H1 L 1.75 17.12 25.53 3.48 1.50 16.10 25.27 2.97 p Q q 3.30 3.05 2.26 2.01 35.56 U1 U2 w1 41.28 10.29 0.25 41.02 10.03 w2 w3 0.51 0.25 0.374 0.375 0.069 0.674 1.005 0.137 0.130 0.089 0.185 0.465 0.007 1.242 1.241 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.366 0.365 0.059 0.634 0.995 0.117 0.120 0.079 0.165 0.455 0.004 1.218 1.219 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 10-02-02 12-05-02 SOT539A Fig 37. Package outline SOT539A BLL6H1214-500_1214LS-500 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 16 of 21 BLL6H1214-500; BLL6H1214LS-500 NXP Semiconductors LDMOS L-band radar power transistor Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 0 5 10 mm scale Dimensions Unit(1) w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405 0.54 inches nom 0.01 min 0.165 0.455 0.004 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.117 0.079 1.265 0.395 0.01 mm max nom min A b E E1 4.7 11.81 0.18 31.55 31.52 c D D1 9.5 9.53 4.2 11.56 0.10 30.94 30.96 9.3 9.27 e F H H1 L Q U1 U2 1.75 17.12 25.53 3.48 2.26 32.39 10.29 1.50 16.10 25.27 2.97 2.01 32.13 10.03 13.72 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version References IEC JEDEC JEITA sot539b_po European projection Issue date 12-05-02 13-05-24 SOT539B Fig 38. Package outline SOT539B BLL6H1214-500_1214LS-500 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 17 of 21 NXP Semiconductors BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 10. Abbreviations Acronym Description ESD ElectroStatic Discharge L-band Long wave Band LDMOS Laterally Diffused Metal-Oxide Semiconductor SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLL6H1214-500_1214LS-500 v.3 20130805 Product data sheet - BLL6H1214-500 v.2 Modifications: • This document now describes both the BLL6H1214-500 and BLL6H1214LS-500 products. • • • • • • • • Table 1 on page 1: ‘mode of operation’ changed to ‘test signal’. Table 4 on page 2: removed row ‘ID’. Table 7 on page 3: ‘mode of operation’ changed to ‘test signal’. Section 7 on page 4: moved several sections to this section. Section 7.4 on page 6: updated figure notes. Section 7.4.1 on page 6: updated graphs. Section 7.4.2 on page 7: updated graphs. Figure 38 on page 17: updated figure. BLL6H1214-500 v.2 20100401 Product data sheet - BLL6H1214-500 v.1 BLL6H1214-500 v.1 20090120 Objective data sheet - - BLL6H1214-500_1214LS-500 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 18 of 21 NXP Semiconductors BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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This document supersedes and replaces all information supplied prior to the publication hereof. BLL6H1214-500_1214LS-500 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 19 of 21 NXP Semiconductors BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLL6H1214-500_1214LS-500 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 5 August 2013 © NXP B.V. 2013. All rights reserved. 20 of 21 NXP Semiconductors BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 7.4.1 7.4.2 7.4.3 7.4.4 7.4.5 7.4.6 7.4.7 7.4.8 7.4.9 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 RF performance graphs . . . . . . . . . . . . . . . . . . 6 Performance curves measured with = 10 %, tp = 300 s and Th = 25 °C . . . . . . . . 6 Performance curves measured with = 10 %, tp = 300 s and Th = 65 °C . . . . . . . . 7 Performance curves measured with = 10 %, tp = 300 s and f = 1300 MHz. . . . . . 8 Performance curves measured with = 20 %, tp = 500 s and Th = 25 °C . . . . . . . . 9 Performance curves measured with = 20 %, tp = 500 s and Th = 65 °C . . . . . . . 10 Performance curves measured with = 20 %, tp = 500 s and f = 1300 MHz. . . . . 11 Performance curves measured with = 10 %, tp = 1 ms and Th = 25 °C . . . . . . . . 12 Performance curves measured with = 10 %, tp = 1 ms and Th = 65 °C . . . . . . . . 13 Performance curves measured with = 10 %, tp = 1 ms and f = 1300 MHz . . . . . . 14 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Handling information. . . . . . . . . . . . . . . . . . . . 18 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Contact information. . . . . . . . . . . . . . . . . . . . . 20 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 5 August 2013 Document identifier: BLL6H1214-500_1214LS-500