^Emi-L-onaucioi U-^ , One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUK553-60A/B PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. PINNING - T0220AB PIN SYMBOL VDS ID ™DS(ON) PARAMETER MAX. MAX. UNIT BUK553 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; Ves = 5 V -60A 60 21 75 175 0.085 -60B 60 20 75 175 0.10 V A W 'C Q PIN CONFIGURATION SYMBOL DESCRIPTION 1 gate 2 drain 3 source tab QUICK REFERENCE DATA drain 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) CONDITIONS SYMBOL PARAMETER VDS VDGR ±VGs +VQSM Drain-source voltage RGS = 20 kQ Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage tp<50ns ID ID Drain current (DC) Drain current (DC) Drain current (pulse peak value) Tmb = 25 'C Tmb = 100-C T mb = 25 'C Total power dissipation Storage temperature Junction Temperature Tmb = 25 'C I DM "tot MIN. MAX. UNIT 60 60 15 20 V V V V -60A 21 15 84 -60B 20 14 80 A A A 75 175 175 -55 W *C •c *• THERMAL RESISTANCES SYMBOL "th j-mb R|hj-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. - TYP. 60 MAX. UNIT 2.0 K/W K/W «/ TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: 973/467-8519 BUK553-60A/B PowerMOS transistor Logic level FET STATIC CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) I IDSS 1 IDSS IGSS F>DS(ON) PARAMETER CONDITIONS Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Jj = 25 °C VDS = 60V;V G S = O V ; T ^ = 1 2 5 ° C VGS = ±15V;V D S = OV VGS = 5 V; BUK553-60A ID = 10 A BUK553-60B MIN. MAX. - UNIT 60 TYP. . 1.0 - 1.5 1 0.1 10 0.075 0.08 2.0 10 1.0 100 0.085 0.10 V HA mA nA £1 ft MIN. TYP. MAX. UNIT 7 10 - S 825 350 160 PF - 700 240 130 PE PF 20 95 80 65 30 120 110 85 ns ns ns ns V DYNAMIC CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL PARAMETER CONDITIONS 9.S Forward transcend uctance VDS = 25V;I D = 1QA VGS = 0 V; VDS = 25 V; f = 1 MHz crss Input capacitance Output capacitance Feedback capacitance ^d on tr tdoff t, Turn-on Turn-on Turn-off Turn-off VDD = 30 V; ID = 3 A; Ves = 5 V; RGS = 50 Q; Rgen = 50 ft Ld Internal drain inductance Ld Internal drain inductance Ls Internal source inductance Cjss C0SS delay time rise time delay time fall time Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad Quality Semi-Conductors - nH 3.5 4.5 - 7.5 - nH nH