Diode Semiconductor Korea ZENER DIODES BZX55 --- SERIES POWER DISSIPATION: 500 mW FEATURES DO-34(GLASS) Silicon planar power zener diodes The zener voltages are graded according to the international E 24 standard. Standard zener voltage tolerance is ±5%. Replace suffix "C" with "B" for ±2%, Replace suffix "C" with "A" for ±1%. other voltage tolerance and other zener voltage are available upon request. MECHANICAL DATA Case:DO-35, Glass Case DO-35(GLASS) Terminals: Solderable per MIL-STD-202, method 208 Polarity: Cathode band Marking: Type number Approx. Weight: 0.13 grams. Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Pow er dissipation @ Tamb=25 Ptot 5001) mW Junction temperature TJ 175 Storage temperature range Ts -55---+175 TYP MAX UNIT RθJA 3001) /W VF 1.0 Zener current (see Table "Characteristics") SYMBOL Thermal resistance junction to ambient Forw ard voltage at IF=100mA MIN NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature. V www.diode.kr Diode Semiconductor Korea ELECTRICAL CHARACTERISTICS (T A=25℃) Type Zener Voltage Range Dynamic Resistance Test Current Temperature Coefficient VZ@IZT rzjT@IZT rzjK@IZK f=1KHz f=1KHz IZT αVZ V Ω mA %/K Min. Max. BZX55C2V4 2.28 2.56 85 600 BZX55C2V7 2.5 2.9 85 BZX55C3V0 2.8 3.2 BZX55C3V3 3.1 BZX55C3V6 Reverse Leakage Current IR@ TA=150℃ IR@ TA=25℃ μA Test Current @VR IZK V mA Min. Max. 5.0 -0.090 -0.060 50 100 1.0 1.0 600 5.0 -0.090 -0.060 10 50 1.0 1.0 85 600 5.0 -0.080 -0.050 4.0 40 1.0 1.0 3.5 85 600 5.0 -0.080 -0.050 2.0 40 1.0 1.0 3.4 3.8 85 600 5.0 -0.080 -0.050 2.0 40 1.0 1.0 BZX55C3V9 3.7 4.1 85 600 5.0 -0.080 -0.050 2.0 40 1.0 1.0 BZX55C4V3 4.0 4.6 75 600 5.0 -0.060 -0.030 1.0 20 1.0 1.0 BZX55C4V7 4.4 5.0 60 600 5.0 -0.050 0.020 0.5 10 1.0 1.0 BZX55C5V1 4.8 5.4 35 550 5.0 -0.020 0.020 0.1 2.0 1.0 1.0 BZX55C5V6 5.2 6.0 25 450 5.0 -0.050 0.050 0.1 2.0 1.0 1.0 BZX55C6V2 5.8 6.6 10 200 5.0 0.030 0.060 0.1 2.0 2.0 1.0 BZX55C6V8 6.4 7.2 8.0 150 5.0 0.030 0.070 0.1 2.0 3.0 1.0 BZX55C7V5 7.0 7.9 7.0 50 5.0 0.030 0.070 0.1 2.0 5.0 1.0 BZX55C8V2 7.7 8.7 7.0 50 5.0 0.030 0.080 0.1 2.0 6.2 1.0 BZX55C9V1 8.5 9.6 10 50 5.0 0.030 0.090 0.1 2.0 6.8 1.0 BZX55C10 9.4 10.6 15 70 5.0 0.030 0.1 0.1 2.0 7.5 1.0 BZX55C11 10.4 11.6 20 70 5.0 0.030 0.11 0.1 2.0 8.2 1.0 BZX55C12 11.4 12.7 20 90 5.0 0.030 0.11 0.1 2.0 9.1 1.0 BZX55C13 12.4 14.1 26 110 5.0 0.030 0.11 0.1 2.0 10 1.0 BZX55C15 13.8 15.6 30 110 5.0 0.030 0.11 0.1 2.0 11 1.0 BZX55C16 15.3 17.1 40 170 5.0 0.030 0.11 0.1 2.0 12 1.0 BZX55C18 16.8 19.1 50 170 5.0 0.030 0.11 0.1 2.0 13 1.0 BZX55C20 18.8 21.2 55 220 5.0 0.030 0.11 0.1 2.0 15 1.0 BZX55C22 20.8 23.3 55 220 5.0 0.040 0.12 0.1 2.0 16 1.0 BZX55C24 22.8 25.6 80 220 5.0 0.040 0.12 0.1 2.0 18 1.0 BZX55C27 25.1 28.9 80 220 5.0 0.040 0.12 0.1 2.0 20 1.0 BZX55C30 28 32 80 220 5.0 0.040 0.12 0.1 2.0 22 1.0 BZX55C33 31 35 80 220 5.0 0.040 0.12 0.1 2.0 24 1.0 BZX55C36 34 38 80 220 5.0 0.040 0.12 0.1 2.0 27 1.0 BZX55C39 37 41 90 500 2.5 0.040 0.12 0.1 5.0 30 0.5 BZX55C43 40 46 90 600 2.5 0.040 0.12 0.1 5.0 33 0.5 BZX55C47 44 50 110 700 2.5 0.040 0.12 0.1 5.0 36 0.5 BZX55C51 48 54 125 700 2.5 0.040 0.12 0.1 10 39 0.5 BZX55C56 52 60 135 1000 2.5 0.040 0.12 0.1 10 43 0.5 BZX55C62 58 66 150 1000 2.5 0.040 0.12 0.1 10 47 0.5 BZX55C68 64 72 200 1000 2.5 0.040 0.12 0.1 10 51 0.5 BZX55C75 70 79 250 1500 2.5 0.040 0.12 0.1 10 56 0.5 www.diode.kr Diode Semiconductor Korea BZX55---SERIES FIG.1 -- BREAKDAWN CHARACTERISTICS mA BZX55... 50 C2V7 C3V9 C5V6 C8V2 40 IZ C4V7 C3V3 C0V8 C6V8 30 TJ=25 C 0 20 Test current Iz 5mA 10 0 0 1 2 3 4 5 6 7 8 9 10 V VZ www.diode.kr Diode Semiconductor Korea BZX55---SERIES FIG.2 -- BREAKDOWN CHARACTERISTICS mA 30 BZX55... TJ=25 0 C C10 IZ C12 C15 20 C18 C22 0 C27 Test current Iz 5mA 10 C33 0 10 20 30 40 V vZ FIG.3 -- ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE mW 500 400 P tot 300 200 100 0 0 100 200℃ Tamb www.diode.kr