CD4503BMS December 1992 File Number CMOS Hex Buffer Features CD4503BMS is a hex noninverting buffer with 3 state outputs having high sink and source current capability. Two disable controls are provided, one of which controls four buffers and the other controls the remaining two buffers. • High Voltage Type (20V Rating) The CD4503BMS is supplied in these 16-lead outline packages: • 2 Output Disable Controls Braze Seal DIP Frit Seal DIP Ceramic Flatpack • 3 State Outputs H4T H1E H6W 3335 • 3 State Non-Inverting Type • 1 TTL Load Output Drive Capability • Pin Compatible with MC14503, and 340097 Industry Types MM80C97, • 5V, 10V and 15V Parametric Ratings • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” Applications • 3 State Hex Buffer for Interfacing ICs with Data Buses • COS/MOS to TTL Hex Buffer Pinout Functional Diagram CD4503BMS TOP VIEW DISABLE A DIS A 1 16 VDD D1 2 15 DIS B Q1 3 14 D6 D2 4 13 DQ6 Q2 5 12 D5 D3 6 11 Q5 Q3 7 10 D4 8 9 Q4 VSS D1 D2 D3 D4 D5 D6 DISABLE B 1 2 3 4 5 6 7 10 9 12 11 14 13 Q1 Q2 Q3 Q4 Q5 Q6 15 VDD = 16 VSS = 8 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CD4503BMS Absolute Maximum Ratings Reliability Information DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Thermal Resistance. . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Supply Current SYMBOL IDD TEMPERATURE MIN MAX UNITS 1 +25oC - 2 µA 2 +125oC - 200 µA 3 -55oC - 2 µA 1 +25oC -100 - nA 2 +125oC -1000 - nA VDD = 18V 3 -55oC -100 - nA VDD = 20 1 +25oC - 100 nA 2 +125oC - 1000 nA 3 -55oC - 100 nA - 50 mV 14.95 - V 2.1 - mA VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND Input Leakage Current Input Leakage Current IIL IIH VIN = VDD or GND VIN = VDD or GND LIMITS GROUP A SUBGROUPS CONDITIONS (NOTE 1) VDD = 20 VDD = 18V Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC +25oC, +125oC, -55oC Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 5.5 - mA Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC 16.1 - mA Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -1.02 mA Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -4.8 mA Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -2.6 mA Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -6.8 mA N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V VDD = 2.8V, VIN = VDD or GND 7 +25oC VDD = 20V, VIN = VDD or GND 7 +25oC VDD = 18V, VIN = VDD or GND 8A +125oC VDD = 3V, VIN = VDD or GND 8B -55oC P Threshold Voltage Functional VPTH F VOH > VOL < VDD/2 VDD/2 V Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.5 V Input Voltage High (Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 3.5 - V Input Voltage Low (Note 2) VIL VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 4 V Input Voltage High (Note 2) VIH VDD = 15V, VOH > 13.5V, VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 11 - V Tri-State Output Leakage IOZL VIN = VDD or GND VOUT = 0V 1 +25oC -0.4 - µA 2 +125oC -12 - µA VDD = 18V 3 -55oC -0.4 - µA VDD = 20V 1 +25oC - 0.4 µA 2 +125oC - 12 µA 3 -55oC - 0.4 µA Tri-State Output Leakage IOZH VIN = VDD or GND VOUT = VDD VDD = 20V VDD = 18V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 4-2 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. CD4503BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Propagation Delay Propagation Delay Propagation Delay3 State Propagation Delay3 State Transition Time Transition Time SYMBOL TPHL TPLH TPHZ TPZH CONDITIONS VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 1, 2) VDD = 5V, VIN = VDD or GND (Note 2, 3) TPZL TPLZ VDD = 5V, VIN = VDD or GND (Note 2, 3) TTHL VDD = 5V, VIN = VDD or GND (Note 1, 2) TTLH VDD = 5V, VIN = VDD or GND (Note 1, 2) LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC - 110 ns 10, 11 +125oC, -55oC - 149 ns 9 +25oC - 150 ns 10, 11 +125oC, -55oC - 203 ns 9 +25oC - 140 ns 10, 11 +125oC, -55oC - 189 ns 9 +25oC - 180 ns 10, 11 +125oC, -55oC - 243 ns 9 +25oC - 70 ns 10, 11 +125oC, -55oC - 95 ns 9 +25oC - 90 ns 10, 11 +125oC, -55oC - 122 ns NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. 3. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND NOTES TEMPERATURE MIN 1, 2 -55oC, +25oC +125oC 1, 2 1, 2 MAX UNITS - 1 µA - 30 µA -55oC, +25oC - 2 µA +125oC - 60 µA -55oC, +25oC +125oC - 2 µA - 120 µA Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, 55oC - 50 mV Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, 55oC - 50 mV Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, 55oC 4.95 - V Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, 55oC 9.95 - V Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 1.3 - mA -55oC 2.6 - mA mA Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 4-3 VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 +125oC 3.8 - -55oC 6.5 - mA +125oC 11.2 - mA -55oC 19.2 - mA +125oC - -0.7 mA -55oC - -1.2 mA +125oC - -3.0 mA -55oC - -5.8 mA +125oC - -1.8 mA -55oC - -3.1 mA +125oC - -4.8 mA -55oC - -8.2 mA CD4503BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Input Voltage Low VIL VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, 55oC - 3 V Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, 55oC +7 - V Propagation Delay TPHL VDD = 10V 1, 2, 3 +25oC - 50 ns VDD = 15V 1, 2, 3 +25oC - 35 ns VDD = 10V 1, 2, 3 +25oC - 70 ns VDD = 15V 1, 2, 3 +25oC - 50 ns Propagation Delay Propagation Delay Propagation Delay Transition Time Transition Time Input Capacitance TPLH TPHZ TPZH VDD = 10V 1, 2, 4 +25oC - 60 ns VDD = 15V 1, 2, 4 +25oC - 50 ns TPZL TPLZ VDD = 10V 1, 2, 4 +25oC - 80 ns VDD = 15V 1, 2, 4 +25oC - 70 ns VDD = 10V 1, 2, 3 +25oC - 40 ns VDD = 15V 1, 2, 3 +25oC - 25 ns VDD = 10V 1, 2, 3 +25oC - 45 ns VDD = 15V 1, 2, 3 +25oC - 35 ns 1, 2 +25oC - 7.5 pF TTHL TTLH CIN Any Inputs NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage SYMBOL IDD VNTH N Threshold Voltage Delta ∆VTN P Threshold Voltage VTP P Threshold Voltage Delta Functional ∆VTP F CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1, 4 +25oC - 7.5 µA 1, 4 +25oC -2.8 -0.2 V VDD = 10V, ISS = -10µA 1, 4 +25oC - ±1 V VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V 1, 4 +25oC - ±1 V 1 +25oC VOH > VDD/2 VOL < VDD/2 V 1, 2, 3, 4 +25oC - 1.35 x +25oC Limit ns VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 3. See Table 2 for +25oC limit. NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-1 IDD ± 0.2µA Output Current (Sink) IOL5 ± 20% x Pre-Test Reading IOH5A ± 20% x Pre-Test Reading Output Current (Source) 4-4 CD4503BMS TABLE 6. APPLICABLE SUBGROUPS MIL-STD-883 METHOD GROUP A SUBGROUPS Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A IDD, IOL5, IOH5A CONFORMANCE GROUP Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test 1, 7, 9 1, 7, 9, Deltas 100% 5004 1, 7, 9 100% 5004 1, 7, 9, Deltas IDD, IOL5, IOH5A 100% 5004 2, 3, 8A, 8B, 10, 11 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample 5005 1, 7, 9 Sample 5005 1, 2, 3, 8A, 8B, 9 Group A Group B 100% 5004 100% 5004 Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11 Subgroups 1, 2 3 NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 TEST READ AND RECORD MIL-STD-883 METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD 5005 1, 7, 9 Table 4 1, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD Static Burn-In 1 (Note 1) 3, 5, 7, 9, 11, 13 1, 2, 4, 6, 8,10, 12, 14, 15 16 Static Burn-In 2 (Note 1) 3, 5, 7, 9, 11, 13 8 1, 2, 4, 6, 10, 12, 14-16 Dynamic BurnIn (Note 1) - 1, 8, 15 16 3, 5, 7, 9, 11, 13 8 1, 2, 4, 6, 10, 12, 14-16 Irradiation (Note 2) 9V ± -0.5V 50kHz 3, 5, 7, 9, 11, 13 2, 4, 6, 10, 12, 14 25kHz NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V 4-5 CD4503BMS Logic Diagram VDD DI * TRUTH TABLE 2 (4, 6, 10, 12, 14) QN 3 (5, 7, 9, 11, 13) DIS A (B) * 1 (15) VSS VDD DN DIS A (B) Qn 0 0 0 1 0 1 X 1 High Z X = Don’t Care DISABLE TO OTHER BUFFERS * ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VSS FIGURE 1. LOGIC DIAGRAM OF 1 TO 6 IDENTICAL BUFFERS AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) 70 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 60 50 40 10V 30 20 10 5V 0 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 9 10 FIGURE 2. TYPICAL N-CHANNEL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -6 -4 -2 -8 -7 -5 -3 -1 0 -10 -20 -30 -40 -50 -60 -15V -70 AMBIENT TEMPERATURE (TA) = +25oC FIGURE 4. TYPICAL P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 4-6 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 50 10V 40 30 20 5V 10 0 -9 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -10V 60 1 2 3 4 5 6 7 8 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 9 10 FIGURE 3. MINIMUM N-CHANNEL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -9 AMBIENT TEMPERATURE (TA) = +25oC 70 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -8 -7 -6 -5 -4 -3 -2 -1 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V -5 -10 -15 -10V -20 -25 -15V -30 -35 AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) Typical Performance Characteristics FIGURE 5. MINIMUM P-CHANNEL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS CD4503BMS (Continued) AMBIENT TEMPERATURE (TA) = +25oC AMBIENT TEMPERATURE (TA) = +25oC TRANSITION TIME (tTHL, tTLH) (ns) PROPAGATION DELAY TIME (tPLH, tPHL) (ns) Typical Performance Characteristics 175 tPLH tPHL 150 125 100 VDD = 5V 75 50 VDD = 10V 25 70 60 50 40 5V (tTLH) 5V (tTHL) 30 10V (tTLH) 20 15V (tTLH) 10 10V (tTHL) 15V (tTHL) VDD = 15V 0 10 20 30 40 50 60 70 80 90 100 0 10 30 20 LOAD CAPACITANCE (CL) (pF) 40 50 60 70 80 FIGURE 6. TYPICAL PROPAGATION DELAY TIME AS A FUNCTION OF LOAD CAPACITANCE POWER DISSIPATION (PD) (µW) VDD = 5V 2 VDD = 10V 10K 8 6 4 2 VDD = 15V 1K CL = 50pF 8 6 4 2 CL = 15pF tr = tf = 20ns 8 6 4 AMBIENT TEMPERATURE (TA) = +25oC 2 10 2 1 4 68 2 10 4 6 8 2 4 6 8 2 4 6 8 103 102 FREQUENCY (f) (kHz) 104 FIGURE 8. TYPICAL POWER DISSIPATION AS A FUNCTION OF FREQUENCY Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: BOND PADS: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches 4-7 100 FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF LOAD CAPACITANCE 8 6 4 100 90 LOAD CAPACITANCE (CL) (pF) CD4503BMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 4-8 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029