2 1 3 4 2 1 Anti-Parallel APT2X100D120J 3 4 2 3 1 4 SO Parallel APT2X101D120J 2 T- 27 APT2X101D120J APT2X100D120J 1200V 1200V "UL Recognized" 93A 93A file # E145592 ISOTOP ® DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers • Low Leakage Current All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR APT2X101_100D120J Characteristic / Test Conditions Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 80°C, Duty Cycle = 0.5) IFSM TJ,TSTG UNIT Maximum D.C. Reverse Voltage VRRM IF(RMS) Density 1200 Volts 93 115 RMS Forward Current (Square wave, 50% duty) Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) -55 to 175 Operating and StorageTemperature Range °C STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V TYP MAX IF = 100A 2.0 2.5 IF = 200A 2.3 IF = 100A, TJ = 125°C 1.8 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 120 UNIT μA pF 9-2009 VF MIN 053-1201 Rev D Symbol APT2X101_100D120J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 47 trr Reverse Recovery Time - 420 Qrr Reverse Recovery Charge - 1250 - 7 - 580 ns - 5350 nC - 19 - 220 - 10300 - 70 MIN TYP IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/μs VR = 800V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 800V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/μs IF = 100A, diF/dt = -1000A/μs VR = 800V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance .41 RθJA Junction-to-Ambient Thermal Resistance 20 WT Torque Package Weight oz 29.2 g 10 lb•in 1.1 N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.30 0.25 0.5 Note: 0.20 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.45 0.35 0.3 0.15 t1 t2 0.10 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 SINGLE PULSE 0.05 0 10 -5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-1201 Rev D 9-2009 °C/W 1.03 Maximum Terminal & Mounting Torque 0.40 UNIT 300 700 250 600 200 TJ = 150°C 150 100 TJ = 25°C TJ = 125°C 50 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) TYPICAL PERFORMANCE CURVES TJ = -55°C 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage T =125°C J V =800V R 200A 500 100A 400 50A 300 200 100 0 0 APT2X101_100D120J 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change Qrr, REVERSE RECOVERY CHARGE (nC) R 200A 100A 50A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 80 T =125°C J V =800V 50 40 100A 30 20 50A 10 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0 200 140 1.2 trr 1.0 IRRM 0.8 trr 0.6 0.4 Qrr 0.2 Duty cycle = 0.5 T =150°C J 120 Qrr 100 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 200A R 60 0 1.4 0.0 T =125°C J V =800V 70 80 60 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 1000 800 600 400 200 0 .6 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-1201 Rev D 9-2009 CJ, JUNCTION CAPACITANCE (pF) 1200 APT2X101_100D120J Vr diF /dt Adjust +18V APT75GP120B2LL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2X100D120J APT2X101D120J Anode 2 Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Cathode 2 Cathode 2 053-1201 Rev D 9-2009 Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.