DMN2058U 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits RDS(ON) Max ID Max 35mΩ @ VGS = 10V 4.6A 40mΩ @ VGS = 4.5V 4.3A 20V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 ideal for high efficiency power management applications. Battery Charging Power Management Functions DC-DC Converters Terminals Connections: See Diagram Below Portable Power Adaptors Weight: 0.009 grams (Approximate) D D G Top View S G S Top View Internal Schematic Ordering Information (Note 4) Part Number DMN2058U-7 DMN2058U-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN2058U Document number: DS38468 Rev. 1 - 2 Mar 3 YM 58U 58U = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: D = 2016) M = Month (ex: 9 = September) 2018 F Apr 4 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D June 2016 © Diodes Incorporated DMN2058U Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C Value 20 ±12 4.6 3.7 1.2 24 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IS IDM Units V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA PD RθJA TJ, TSTG Steady State Steady State Value 0.74 172 1.13 111 -55 to +150 Unit W °C/W W °C/W °C (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS(TH) RDS(ON) VSD 0.6 27 30 37 49 0.7 1.2 35 40 60 91 1.2 V Static Drain-Source On-Resistance 0.4 VDS = VGS, ID = 250µA VGS = 10V, ID = 6.0A VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 4.0A VGS = 1.8V, ID = 2.0A VGS = 0V, IS = 1A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR 281 50 39 3.1 3.6 7.7 0.5 0.9 2.0 4.9 9.9 3.3 5.4 0.7 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 10V, ID = 6.0A ns VGS = 4.5V, VDD = 10V, RG = 6Ω, ID = 6.0A ns nC IF = 6.0A, di/dt = 100A/μs IF = 6.0A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2058U Document number: DS38468 Rev. 1 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN2058U VGS = 10V 10 VGS = 4.5V VGS = 4.0V 18 ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 2V VGS = 2.5V 16 8 14 12 10 8 VDS = 5.0V 9 ID, DRAIN CURRENT (A) 20 VGS = 1.5V 6 7 6 5 T A = 150°C 4 T A = 125°C 3 VGS = 1.2V 2 TA = -55°C T A = 85°C 2 4 T A = 25°C 1 VGS = 1V 0 0.5 1 1.5 2 2.5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 0 3 0.1 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( ) 0.09 0.08 0.07 VGS = 1.8V 0.06 0.05 VGS = 2.5V 0.04 VGS = 4.5V 0.03 VGS = 10V 0.02 0.01 0 0.5 1 1.5 2 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.5 0.1 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.09 0.08 0.07 0.06 I D = 6A 0.05 0.04 ID = 2A 0.03 0.02 0.01 20 0.06 0 0 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 12 2.5 VGS = 10V 0.05 T A = 125°C RDS(ON), DRAIN-SOURCE ON-RESI STANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 T A = 150°C 0.04 T A = 85°C 0.03 T A = 25°C T A = -55°C 0.02 0.01 0 0 2 4 6 8 10 12 14 16 18 I D, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN2058U Document number: DS38468 Rev. 1 - 2 20 3 of 7 www.diodes.com 2 VGS = 2.5V I D = 4A VGS = 1.5V ID = 2A 1.5 VGS = 1.5V VGS = 4.5V 1 I D = 2A I D = 6A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature June 2016 © Diodes Incorporated 0.1 1 0.09 0.9 VGS(th ), GATE THRESHO LD VOLTAGE (V) RD S(ON ), DRAIN-SOURCE ON-RESISTANCE () DMN2058U 0.08 VGS = 1.5V 0.07 ID = 2A VGS = 2.5V 0.06 I D = 3.1A 0.05 0.04 VGS = 4.5V 0.03 VGS = 4.5V 0.02 I D = 3.6A ID = 3.6A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 20 0.8 0.7 I D = 1mA 0.6 0.5 ID = 250µA 0.4 0.3 0.2 0.1 0-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000 f=1MHz CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 18 16 14 12 10 TA = 150°C 8 T A = 125°C 6 TA = 25°C T A = -55°C T A = 85°C 4 C iss 100 Coss C rss 2 00 10 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 5 10 15 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 100 R DS(on) Limited 8 PW = 100µs ID , DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) 10 0 6 4 VDS = 10V I D = 6A 10 1 DC PW = 10s PW = 1s P 0.1 TJ(m ax) = 150°CW TC = 25°C 2 0 0 PW = 1ms 1 2 3 4 5 6 7 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN2058U Document number: DS38468 Rev. 1 - 2 8 4 of 7 www.diodes.com 0.01 0.1 = 100ms PW = 10ms V GS = 4.5V Single Pulse DUT on 1 * MRP Board 1 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 June 2016 © Diodes Incorporated DMN2058U 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * R JA RJA = 170°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 DMN2058U Document number: DS38468 Rev. 1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 June 2016 © Diodes Incorporated DMN2058U Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMN2058U Document number: DS38468 Rev. 1 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com June 2016 © Diodes Incorporated DMN2058U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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