PHILIPS BU2530AL Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
ts
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
VBE = 0
PINNING - SOT430
PIN
TYP.
MAX.
UNIT
9
3.5
1500
800
16
40
125
5.0
4.5
V
V
A
A
W
V
A
µs
Tmb ≤ 25 ˚C
IC = 9.0 A; IB = 1.64 A
ICsat = 9.0 A; IB(end) = 1.3 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
heat collector
sink
c
b
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
MIN.
MAX.
UNIT
-55
-
1500
800
16
40
10
15
200
10
125
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
1.0
K/W
35
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to mounting base
-
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
VCEsat
VBEsat
hFE
hFE
Emitter cut-off current
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
7.5
5.5
14
17
8
1.0
5.0
1.0
10
mA
V
V
V
TYP.
MAX.
UNIT
3.5
0.14
4.5
0.25
µs
µs
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 1 mA
IC = 9.0 A; IB = 1.64 A
IC = 9.0 A; IB = 1.64 A
IC = 1 A; VCE = 5 V
IC = 9 A; VCE = 5 V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
ts
tf
PARAMETER
CONDITIONS
Switching times (32 kHz line
deflection dynamic test circuit).
ICsat = 9.0 A; LC = 200 µH; Cfb = 13 nF;
VCC = 138 V; IB(end) = 1.3 A;
-IBM = 4.5 A; -VBB = 4 V; LB = 1 µH
Turn-off storage time
Turn-off fall time
TRANSISTOR
ICsat
ICsat
90 %
IC
DIODE
t
IC
IBend
IB
10 %
tf
t
10us
t
ts
13us
IB
IBend
32us
t
VCE
- IBM
t
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
+ 150 v nominal
adjust for ICsat
VCEsat / V
BU2530/2AL
10
Tj = 85 C
Tj = 25 C
Lc
1
IC/IB = 10
LB
IBend
IC/IB = 5
T.U.T.
0.1
Cfb
-VBB
0.01
0.1
10
100
IC / A
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.3. Switching times test circuit.
hFE
1
VBEsat / V
BU2530/2AL
BU2530/2AL
1
100
VCE = 1 V
IC = 9 A
Tj = 85 C
Tj = 25 C
0.9
0.8
10
IC = 7 A
Tj = 85 C
Tj = 25 C
0.7
1
0.01
0.1
1
10
0.6
100
IC / A
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE
0
1
2
3
IB / A
4
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
PTOT / W
BU2530/2AL
100
BU2530AL
100
VCE = 5 V
Tj = 85 C
Tj = 25 C
Tj = 85 C
Tj = 25 C
10
1
0.01
10
0.1
1
10
1
100
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
September 1997
0
1
2
3
4
IB / A
IC / A
Fig.8. Typical turn-off losses.
PTOT = f (IB); parameter IC; f = 32 kHz
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
ts/tf / us
BU2530AL
VCC
BU2530AL
10
8
LC
6
4
IBend
2
-VBB
0
0
1
2
3
Fig.12. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 1 - 3 µH;
CFB = 1 - 10 nF; IB(end) = 1.3 - 2.6 A
Fig.9. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
Normalised Power Derating
PD%
CFB
T.U.T.
4
IB / A
120
VCL
LB
IC / A
BU2530/32AL
40
110
100
90
30
80
70
Area where
fails occur
60
50
20
40
30
10
20
10
0
0
20
40
60
80
100
Tmb / C
120
140
0
100
1000
1500
Fig.13. Reverse bias safe operating area. Tj ≤ Tjmax
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
Zth / K/W
VCE / V
BU2530AL/32AL
10
1
0.5
0.2
0.1
0.1
0.05
0.02
PD
tp
D=
0.01
T
tp
T
t
D=0
0.001
1.0E-06
1E-04
1E-02
1E+00
t/s
Fig.11. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
MECHANICAL DATA
Dimensions in mm
5.3 max
20.5 max
Net Mass: 9 g
3.0
3.1
3.5
6.0
3.0
4.0
25.5
26.5
10.0
3.0
1.5
2.5
seating
plane
1.5
2.5 max
19.5
min
3.5 max
0.8
1.0
0.4 M
0.8 max
3.0 max
5.45 5.45
Fig.14. SOT430; pin 2 connected to mounting base.
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2530AL
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
6
Rev 1.200
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