600V 30A APT30DQ60K APT30DQ60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters -Inverters • Snubber Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-220 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Increased System Power Density • PFC 1 2 1 2 • Avalanche Energy Rated 1 - Cathode 2 - Anode Back of Case - Cathode All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions APT30DQ60K(G) UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 117°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 51 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG TL Amps 320 20 mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 2.0 2.4 IF = 60A 2.4 IF = 30A, TJ = 125°C 1.7 VR = 600V Microsemi Website - http://www.microsemi.com Volts 25 VR = 600V, TJ = 125°C UNIT μA 500 36 pF 053-4215 Rev D 2-2010 Symbol DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge trr IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C IF = 30A, diF/dt = -200A/μs Maximum Reverse Recovery Current trr IRRM APT30DQ60K(G) VR = 400V, TC = 25°C IF = 30A, diF/dt = -200A/μs Maximum Reverse Recovery Current VR = 400V, TC = 125°C Reverse Recovery Time Qrr IRRM IF = 30A, diF/dt = -1000A/μs Reverse Recovery Charge Maximum Reverse Recovery Current VR = 400V, TC = 125°C MIN TYP MAX UNIT - 23 - 30 - 55 - 3 - 175 ns - 485 nC - 6 - 75 ns - 855 nC - 22 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions R JC Junction-to-Case Thermal Resistance WT Package Weight Torque MAX UNIT .80 °C/W 0.07 oz 1.9 g Maximum Mounting Torque 10 lb•in 1.1 N•m Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.80 0.60 0.7 0.50 0.5 0.40 0.30 Note: 0.3 t1 t2 0.20 t SINGLE PULSE 0.1 0.05 0.10 0 053-4215 Rev D 2-2010 D = 0.9 0.70 PDM Z JC, THERMAL IMPEDANCE (°C/W) 0.90 10-5 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TYPICAL PERFORMANCE CURVES APT30DQ60K(G) 200 80 TJ = 175°C 60 TJ = 125°C 40 TJ = -55°C 20 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 100 TJ = 25°C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 1200 T = 125°C J V = 400V R 1000 60A 800 30A 600 15A 400 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 30A 140 120 100 15A 80 60 40 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 25 T = 125°C J V = 400V 60A R 20 30A 15 10 15A 5 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 60 Qrr Duty cycle = 0.5 T = 175°C J trr 1.0 160 0 50 trr 0.8 40 IRRM IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 1.2 R 20 IRRM, REVERSE RECOVERY CURRENT (A) 0 T = 125°C J V = 400V 60A 180 0.6 20 0.4 Qrr 0.2 0.0 30 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 10 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 200 160 140 120 100 80 60 40 20 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4215 Rev D 2-2010 CJ, JUNCTION CAPACITANCE (pF) 180 APT30DQ60K(G) Vr diF /dt Adjust +18V APT30GT60BR 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions TO-220 (K) Package Outline e3 100% Sn 0.404 [10.26] 0.393 [9.98] Cathode 0.114 [2.90] 0.102 [2.59] 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] ø0.153 [3.89] ø0.149 [3.78] 0.508 [12.90] 0.492 [12.50] 0.362 [9.19] 0.354 [8.99] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.110 [2.79] 0.099 [2.51] 0.057 [1.45] 0.047 [1.19] 053-4215 Rev D 2-2010 Cathode Anode 0.100 [2.54] TYP 0.204 [5.18] 0.196 [4.98] 0.034 [0.86] 0.030 [0.76] 0.018 [0.46] 0.014 [0.36] Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.