, Una.. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY69A Silicon NPN Power Transistors DESCRIPTION • Collector-Base Breakdown Voltage:V(BR)CBo= 800V(Min.) High Speed Switching APPLICATIONS • Designed for horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial I application. PIN 1.BASE 1 __T 2. EMITTER "X. 3. COLLECT OR (CASE) ' TO-3 package ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT 800 V ^t VCBO Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Ic ICM 400 V Emitter-Base Voltage 8 V Collector Current-Continuous 10 A Collector Current-peak 15 A IB Base Current-Continuous 3.0 A PC Collector Power Dissipation @Tc~25°C 100 W Tj Junction Temperature 200 'C -65-200 •c Tstg Storage Temperature Range PARAMETER i I ^ ft f f Vs^ Rth j-c i r _u —4U-D < PL r •EB / i t i B ? c 1 J ^fS' \^ H3S MAX UNIT 1 .75 •c/w DIM ^ B _£_. D E G K K L N JL U Thermal Resistance, Junction to Case i I1MI1 THERMAL CHARACTERISTICS SYMBOL , f ~:q- y HIM MAX 3900 2530 26.67 8,30 ?9° 1.10 090 1.60 140 1 0 92 546 "40 13.50 16.75 1705 19,40 1962 4.20 40° 'JO™1 3020 430 4.50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon NPN Power Transistors BUY69A ELECTRICAL CHARACTERISTICS TC=25'C unless otherwise specified SYMBOL PARAMETER VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0 400 V Collector-Base Voltage l c =1mA;l E =0 800 V VcE(sat) Collector-Emitter Saturation Voltage lc= 8A; IB= 2.5A 3.3 V VBE(sat) Base-Emitter Saturation Voltage lc= 8A; IB= 2.5A 2.2 V ICES Collector Cutoff Current VcE=ratedVCEs; VBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 8V; lc= 0 1.0 mA hFE DC Current Gain lc=2.5A; VCE=10V 15 Current-Gain — Bandwidth Product lc= 0.5A; VCE= 10V; f,est= 1MHz 10 VCBO fr CONDITIONS MIN MAX UNIT MHz Switching Times tr Rise Time ts Storage Time tf Fall Time lc=5A; IB1= -Is2= 1A; VCC=250V 0.3 us 1.8 us 1.0 us